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Diodes Incorporated DMTH8008LFG-13

Part No.:
DMTH8008LFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMTH8008LFG-13.pdf
Description:
MOSFET BVDSS: 61V~100V POWERDI33
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,346

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Product details

Overview

DMTH8008LFG-13 from Diodes Incorporated is an 80V, 70A N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, rated for +175°C operation, with RDS(ON) = 6.9 mΩ @ VGS = 10V and 10.4 mΩ @ VGS = 4.5V, optimized for high-efficiency DC-DC converters and automotive-grade power management.

For engineers reviewing the DMTH8008LFG-13 datasheet, DMTH8008LFG-13 pinout, DMTH8008LFG-13 application, or DMTH8008LFG-13 equivalent, key selection criteria include its low Qgd × RDS(ON) figure-of-merit, 100% production-tested UIS robustness, thermally efficient exposed-drain package, and AEC-Q-compliant qualification path (via DMTH8008LFGQ).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (1.2–2.5 V) enables compatibility with 3.3 V and 5 V logic drivers, and its body diode exhibits tRR = 42 ns and QRR = 53 nC under 100 A/μs di/dt conditions.

The device's thermal design centers on a low RθJC of 3 °C/W (junction-to-case), enabled by the exposed drain pad in the PowerDI3333-8 package. It supports continuous operation up to TJ = +175°C, with RDS(ON) normalized to ≤2.4× at 175°C - critical for under-hood automotive and industrial power stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 80 V - Supports 48 V nominal bus systems with 20 % margin for transients.
RDS(ON) @ 10 V 6.9 mΩ max - Enables <1.4 W conduction loss at 70 A, reducing heatsink requirements.
RDS(ON) @ 4.5 V 10.4 mΩ max - Ensures usable channel enhancement with standard 5 V gate drivers.
Qg @ 10 V 37.7 nC - Low total gate charge minimizes driver power and switching energy loss.
EAS 162 mJ - Robust unclamped inductive switching capability improves system fault tolerance.
TJ max +175°C - Qualified for extended-life operation in high-ambient environments (e.g., engine compartments).
Ciss 2254 pF - Predictable input capacitance simplifies gate drive loop stability analysis.

Pinout & Package

Package: PowerDI®3333-8 - thermally enhanced surface-mount package with exposed drain pad (pins 5–8), 3.3 mm × 3.3 mm footprint, 0.8 mm height, and UL 94V-0 molded compound.

Pin/Terminal Circuit Role Design Meaning
1 Gate Control terminal; requires ≤±20 V gate-source voltage; low Rg = 1.98 Ω aids fast turn-on/turn-off.
2, 3, 4 Source Return path for load current; tied to PCB ground plane; low-inductance layout critical for EMI control.
5–8 Drain (exposed pad) Main power output node; soldered directly to large copper area for thermal dissipation (RθJC = 3 °C/W).

Key Features

Feature Design Value
100% UIS tested in production Guarantees avalanche ruggedness without derating - eliminates need for external snubbers in flyback or buck-boost topologies.
PowerDI3333-8 package Reduces board area by 67 % vs SO-8; exposes drain on bottom for direct thermal coupling to heatsink or inner-layer copper.
Low Qgd × RDS(ON) FOM Qgd = 7.8 nC × RDS(ON) = 6.9 mΩ → 53.8 mΩ·nC - minimizes Miller-induced switching delay and shoot-through risk.
+175°C operation Rated junction temperature enables use in sealed enclosures or near heat sources without forced air cooling.
Halogen- and antimony-free "Green" construction Meets JEDEC J-STD-020 Level 1 moisture sensitivity and RoHS 3 (2015/863/EU) compliance without performance trade-offs.

Applications

Automotive Body Control Module (BCM) Industrial 48 V DC-DC Converter

Use Scenario: High-side load switch for LED headlight dimming and HVAC blower motor control in engine bay environments.

IC Role / Device Role / Timing Role: N-channel high-side switch with integrated bootstrap gate drive support; handles repetitive 70 A pulsed loads.

Use Value: 175°C rating avoids thermal shutdown during sustained 85°C ambient operation; low RDS(ON) reduces power loss by >30 % vs legacy TO-252 devices.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V telecom or server PSU.

IC Role / Device Role / Timing Role: Fast-switching power stage with low Qg and tight tF = 21 ns for ZVS/ZCS soft-switching implementation.

Use Value: 37.7 nC Qg enables efficient driving with low-power gate drivers; 162 mJ EAS sustains reliability during transient overloads.

Automotive ADAS Camera Power Supply Medical Portable Infusion Pump Motor Driver

Use Scenario: Compact 12 V input buck converter powering CMOS image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Low-profile, high-current power switch operating at 500 kHz switching frequency with minimal thermal rise.

Use Value: PowerDI3333-8 footprint saves >60 % PCB area vs SO-8; 10.4 mΩ RDS(ON) @ 4.5 V allows direct PWM control from MCU GPIO.

Use Scenario: H-bridge half-bridge driver for precision stepper motor in battery-powered infusion pump.

IC Role / Device Role / Timing Role: Low-conduction-loss switch enabling microstepping with <100 mV dropout at 2 A continuous.

Use Value: 6.9 mΩ RDS(ON) limits I²R heating to <300 mW at full load - critical for sealed, fanless medical enclosure compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay SiR626DP RDS(ON) = 5.2 mΩ @ 10 V, but only rated to +150°C; larger PowerPAK® 5x6 package (30 mm² vs 10.9 mm²). Lacks AEC-Q qualification path; unsuitable for under-hood automotive use above 150°C ambient. Select when lower RDS(ON) outweighs thermal rating and board space constraints.
Infineon BSC014N06LS6 RDS(ON) = 1.4 mΩ @ 10 V, but VDSS = 60 V; PG-TSDSON-8 package with higher RθJA (62 °C/W). Not suitable for 48 V bus systems requiring 20 % transient margin; limited to ≤60 V designs. Prefer for 24 V or lower-input industrial SMPS where ultra-low conduction loss is primary.

Compared with SiR626DP and BSC014N06LS6, DMTH8008LFG-13 uniquely balances 80 V rating, +175°C capability, compact footprint, and production-tested avalanche robustness - making it optimal for space-constrained, high-reliability 48 V power stages where thermal margin and long-term stability are non-negotiable.

Availability

DMTH8008LFG-13 is available at Aetrix Electronics and suitable for automotive body electronics, industrial 48 V DC-DC converters, and medical portable equipment requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMTH8008LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

DMTH8008LFG belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-temperature, high-density power conversion in safety-critical and thermally demanding applications.

FAQ

What is the maximum continuous drain current at TC = +100°C?

The DMTH8008LFG-13 supports 49 A continuous drain current at case temperature +100°C, per the Absolute Maximum Ratings table (Note 7). This reflects derating from the 70 A rating at +25°C due to thermal resistance limitations and safe operating area constraints.

Is the PowerDI3333-8 package lead-free and RoHS compliant?

Yes - the DMTH8008LFG-13 uses matte tin annealed over copper leadframe and complies with EU RoHS 2015/863/EU (RoHS 3), including exemption clauses. It is also halogen- and antimony-free ("Green") per Diodes' specification (<900 ppm Br/Cl, <1000 ppm Sb).

Does this MOSFET require a gate resistor for reliable switching?

A gate resistor is recommended: typical value is 6 Ω (per datasheet switching time test condition). It controls dV/dt, suppresses ringing, and prevents shoot-through in half-bridge configurations; omission risks oscillation and gate driver overstress due to low Rg = 1.98 Ω.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has VSD = 0.8–1.2 V at 20 A and tRR = 42 ns, offering lower forward drop than standard PN diodes but higher than Schottky. It eliminates external diode count in synchronous rectifiers, though Schottky co-packaging may be preferred for ultra-low VF in high-frequency designs.

DMTH8008LFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
37.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2254 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta), 50W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMTH8008LFG-13 FAQ

1.How can I place an order for DMTH8008LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH8008LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH8008LFG-13 reliable?

The price and inventory of DMTH8008LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8008LFG-13 is usually 5 days.

3.What payment methods are accepted for DMTH8008LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8008LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH8008LFG-13?

DMTH8008LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH8008LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH8008LFG-13?

For technical support, including DMTH8008LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8008LFG-13 requirements.

6.How does Aetrix verify that DMTH8008LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMTH8008LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8008LFG-13 meets industry standards.

7.What is the process for return or replacement of DMTH8008LFG-13?

All DMTH8008LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8008LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH8008LFG-13 part is unused and in its original packaging.

Return procedure for DMTH8008LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH8008LFG-13 Tags

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