Diodes Incorporated DMTH8008LFG-7

Overview

DMTH8008LFG-7 from Diodes Incorporated is an 80V, 70A N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, featuring 6.9mΩ R_DS(ON) @ V_GS = 10V, 100% production-tested UIS, and rated for operation up to +175°C. It serves as a high-current, thermally robust power switch in DC-DC converter primary-side and backlight LED driver circuits.

For engineers reviewing the DMTH8008LFG-7 datasheet, DMTH8008LFG-7 pinout, DMTH8008LFG-7 application, or DMTH8008LFG-7 equivalent, key selection criteria include its low Q_gd × R_DS(ON) figure-of-merit (FOM), 33% board-area reduction versus SO-8, and validated avalanche energy (E_AS = 162 mJ) for rugged switching in automotive and industrial power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck converters and high-side LED drivers. Its gate threshold voltage (1.2–2.5V) enables compatibility with 3.3V and 5V logic-level drive, while the 1.98Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.

The device integrates a robust body diode with t_RR = 42ns and Q_RR = 53nC, enabling efficient freewheeling in hard-switched topologies. Thermal design is anchored by R_θJC = 3°C/W and a solderable exposed drain pad, allowing direct thermal coupling to PCB copper planes for sustained 50W dissipation at T_C = +25°C.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 5–8) for direct PCB heat sinking; footprint occupies only 33% of SO-8 area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH8008LFG-7, DMTH8008LFGQ-7 adds automotive compliance overhead without electrical benefit, while IPB070N15N3G trades board area and thermal capability for voltage headroom - making DMTH8008LFG-7 optimal for compact, high-temperature 48–60V industrial and display power stages.

Availability

DMTH8008LFG-7 is available at Aetrix Electronics and suitable for automotive BCMs, industrial 48V DC-DC converters, and LED backlight drivers requiring stable component supply across multi-year production cycles.

Supply support for DMTH8008LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

This MOSFET belongs to Diodes' PowerDI®3333-8 portfolio, engineered specifically for high-current, high-temperature power conversion where board space and thermal performance are critical constraints.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH8008LFG-7 supports 49A continuous drain current at T_C = +100°C, verified per datasheet Note 7. This rating assumes proper PCB thermal design with ≥1-inch² 2oz copper connected to the exposed drain pad, enabling operation in high-ambient environments like enclosed power supplies without active cooling.

Is the PowerDI3333-8 package lead-free and RoHS compliant?

Yes - the DMTH8008LFG-7 uses matte tin annealed over copper leadframe and green molding compound, meeting EU RoHS 2015/863/EU (RoHS 3) and halogen-free standards (<900ppm Br, <900ppm Cl, <1000ppm Sb). UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity further confirm process compatibility with standard SMT reflow profiles.

Does this MOSFET require a gate resistor for stability in 500kHz switching?

A gate resistor is recommended but not mandatory: the intrinsic R_g = 1.98Ω provides baseline damping. For 500kHz operation with 6Ω external gate resistor, measured t_d(off) = 37ns and t_f = 21ns align with datasheet values - confirming stable, non-oscillatory switching without additional ferrite beads or RC snubbers in typical buck converter layouts.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode delivers V_SD = 0.8–1.2V at 20A and t_RR = 42ns, outperforming most discrete 80V Schottkys in reverse recovery charge (Q_RR = 53nC) and thermal coupling. Unlike external Schottkys, it shares the same die temperature and eliminates parasitic inductance from separate packaging - critical for minimizing voltage spikes in synchronous rectification.