Diodes Incorporated DMTH8008LPS-13

Overview

DMTH8008LPS-13 from Diodes Incorporated is an 80V, N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous drain current of 91A at TC = +25°C, R_DS(ON) = 7.8mΩ @ V_GS = 10V, and operating junction temperature up to +175°C. It is engineered for high-efficiency power management in DC-DC converters and high-current load switching applications where thermal robustness and low conduction loss are critical.

For engineers reviewing the DMTH8008LPS-13 datasheet, DMTH8008LPS-13 pinout, DMTH8008LPS-13 application, or DMTH8008LPS-13 equivalent, key selection criteria include its 100% production-tested UIS capability, normalized R_DS(ON) stability over -55°C to +175°C, and optimized gate charge (Q_g = 41.2nC @ V_GS = 10V) for fast switching with reduced drive loss.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low R_DS(ON) and controlled gate charge, enabling high-frequency synchronous rectification in buck converters. Its body diode exhibits t_RR = 61ns and Q_RR = 181nC under IF = 2A/dI/dt = 100A/μs conditions, supporting efficient hard-switched topologies.

The device features a thermally enhanced PowerDI5060-8 package with exposed drain pad, achieving R_θJC = 1.5°C/W and supporting 100W continuous dissipation at T_C = +25°C. Its ±20V V_GSS rating and 1.3–2.8V V_GS(TH) enable reliable 4.5V logic-level drive while maintaining noise immunity in noisy power systems.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally optimized 8-pin surface-mount package with exposed drain pad for low R_θJC (1.5°C/W) and high-power density mounting on 2oz copper PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH8008LPSQ-13, the standard DMTH8008LPS-13 omits AEC-Q101 test overhead but retains identical thermal and switching performance; versus IPB80N06S4-02, it trades 22V higher breakdown for 3.8mΩ higher R_DS(ON), making it optimal for 48V industrial power where voltage margin is non-negotiable.

Availability

DMTH8008LPS-13 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive load switching, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for DMTH8008LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management solutions for industrial, automotive, and communications markets.

The DMTH8008LPS belongs to Diodes' PowerMOS™ portfolio, designed specifically for high-current, high-temperature power conversion and load switching where R_DS(ON) stability and avalanche ruggedness are primary design constraints.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH8008LPS-13 supports 64A continuous drain current at T_C = +100°C, as specified in the Maximum Ratings table. This derating reflects thermal resistance limitations and ensures safe operation within the 1.5°C/W R_θJC constraint when mounted on appropriate PCB copper area.

Does this MOSFET require a gate resistor for EMI suppression?

Yes - a 1.6Ω gate resistor is used in the datasheet's dynamic characterization (t_D(ON), t_R). This value balances switching speed against gate ringing and EMI; increasing it beyond 5Ω significantly raises switching losses without meaningful EMI improvement in typical 48V buck layouts.

Can DMTH8008LPS-13 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(ON) (normalized increase with T_J) enables inherent current sharing. Layout must ensure matched gate loop inductance and symmetric thermal coupling to the exposed drain pad; recommended maximum mismatch in gate trace length is ±0.5mm.

Is the PowerDI5060-8 package compatible with standard reflow profiles?

Yes - the PowerDI5060-8 meets IPC/JEDEC J-STD-020 moisture sensitivity level 1, allowing unlimited floor life and compatibility with standard lead-free reflow profiles (peak 260°C, 60s above 217°C). The matte tin annealed finish ensures solderability per MIL-STD-202, Method 208.