Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMTH8008LPSQ-13

Part No.:
DMTH8008LPSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixDMTH8008LPSQ-13.pdf
Description:
MOSFET BVDSS: 61V~100V POWERDI50
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,120

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMTH8008LPSQ-13 from Diodes Incorporated is an AEC-Q101-qualified 80V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous drain current of 91A at TC = +25°C, RDS(ON) = 7.8 mΩ @ VGS = 10V, and operation up to +175°C junction temperature. It is engineered for high-reliability automotive DC-DC converters and load switches requiring robust UIS performance and low conduction loss.

For engineers reviewing the DMTH8008LPSQ-13 datasheet, DMTH8008LPSQ-13 pinout, DMTH8008LPSQ-13 application, or DMTH8008LPSQ-13 equivalent, key selection criteria include its 80V VDSS, 100% production-tested UIS capability, thermal resistance RθJC = 1.5°C/W, AEC-Q101 qualification status, and PowerDI5060-8 thermal pad layout compatibility.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and fast switching in high-temperature automotive environments. Its gate threshold voltage (1.3–2.8V) enables reliable turn-on with standard 4.5V logic-level drivers, while the 41.2 nC total gate charge at VGS = 10V supports efficient PWM control in DC-DC topologies.

The device integrates an intrinsic body diode with tRR = 61 ns and QRR = 181 nC, enabling synchronous rectification in buck converters. Its 1.5°C/W junction-to-case thermal resistance and exposed drain pad design allow direct mounting to PCB copper planes for effective heat extraction in space-constrained modules.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 80 V - Withstands transient overvoltage spikes up to 80V in 12V/24V automotive systems without breakdown.
RDS(ON) 7.8 mΩ @ VGS = 10V - Delivers <0.5W conduction loss at 91A, critical for high-efficiency power stages.
ID (TC = +25°C) 91 A - Supports high-current load switching in engine control units and battery management subsystems.
TJ Range −55°C to +175°C - Certified for under-hood applications where ambient exceeds 125°C.
UIS Rating 23 A / 26.5 mJ - 100% production-tested unclamped inductive switching ensures field reliability in relay replacement circuits.
QG (VGS = 10V) 41.2 nC - Enables precise gate drive timing in 200–500 kHz DC-DC controllers with minimal driver power demand.
Ciss 2345 pF - Low input capacitance reduces Miller effect and improves noise immunity in high-dV/dt environments.

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (D) on bottom side for direct PCB thermal coupling. Molded green compound (UL 94V-0), matte tin annealed terminals, MSL Level 1.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7 Drain (D) Seven parallel drain connections tied to internal die source metallization and exposed thermal pad - primary current path and thermal conduction path to PCB.
8 Gate (G) Single gate terminal with 1.7 Ω gate resistance - interfaces directly with standard gate drivers without external series resistor in most 400 kHz designs.
- (Exposed Pad) Drain (D) Integral part of drain terminal; must be soldered to ≥1 in² 2oz copper pour for RθJC = 1.5°C/W performance.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation.
+175°C maximum junction temperature Enables placement in high-ambient zones (e.g., near engines or inverters) without derating or forced cooling.
100% production UIS tested Each unit passes 23A/26.5mJ avalanche stress test - eliminates latent failure modes in inductive load switching.
Low RDS(ON) @ 4.5V 11 mΩ at VGS = 4.5V - Ensures full enhancement with 5V microcontroller outputs, reducing need for level-shifting circuitry.
Halogen- and antimony-free "Green" construction <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Complies with automotive OEM environmental directives and RoHS 3 (2015/863/EU).

Applications

Automotive DC-DC Converters High-Temperature Load Switches

Use Scenario: 12V-to-5V/3.3V buck converter in ADAS camera ECU operating continuously at 105°C ambient.

IC Role / Device Role / Timing Role: Primary high-side power switch controlling energy transfer into output inductor; switching frequency 300 kHz.

Use Value: 7.8 mΩ RDS(ON) limits conduction loss to ≤0.6W at 80A peak, enabling >95% efficiency without heatsink.

Use Scenario: Engine bay battery disconnect switch activated during cold cranking to protect infotainment system.

IC Role / Device Role / Timing Role: High-current, high-temperature load switch replacing mechanical relay; controlled via CAN-triggered MCU GPIO.

Use Value: +175°C rating and 100% UIS testing ensure survival during 100 ms 150A surge events without latch-up or parametric shift.

On-Board Charger (OBC) Auxiliary Supplies Electric Power Steering (EPS) Motor Drivers

Use Scenario: 400V-to-12V isolated auxiliary supply powering OBC control logic and gate drivers.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter; operates at 250 kHz with zero-voltage switching.

Use Value: 61 ns body diode tRR and 181 nC QRR minimize reverse recovery losses and EMI generation during hard commutation.

Use Scenario: H-bridge half-bridge leg in 48V EPS motor control module mounted adjacent to motor housing.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional motor current up to 77A RMS at 150°C case temperature.

Use Value: RθJC = 1.5°C/W allows direct thermal coupling to aluminum chassis, maintaining TJ < 165°C under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7AG 60V VDSS, 2.2 mΩ @ 10V, PowerFLAT 5x6 Limited to 60V systems; lower RDS(ON) but insufficient for 48V+ transients in 80V-rated architectures. Select only if system max VDS ≤ 60V and thermal budget permits smaller package.
IXTQ80N10P 100V VDSS, 10.5 mΩ @ 10V, TO-220AB Higher RDS(ON) and through-hole packaging increases board area and thermal resistance vs. PowerDI5060-8. Choose when legacy through-hole assembly is required and 100V margin justifies 35% higher conduction loss.

Compared with STL220N6F7AG and IXTQ80N10P, DMTH8008LPSQ-13 uniquely balances 80V rating, ultra-low 7.8 mΩ on-resistance, thermally optimized surface-mount packaging, and full AEC-Q101 validation - making it optimal for next-generation compact, high-efficiency automotive power stages.

Availability

DMTH8008LPSQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, high-temperature load switches, and on-board charger auxiliary supplies requiring stable component supply across extended product lifecycles.

Supply support for DMTH8008LPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, designed specifically for AEC-Q101-compliant power conversion and load management in harsh-temperature vehicle subsystems.

FAQ

What is the maximum allowable gate-source voltage for DMTH8008LPSQ-13?

The absolute maximum VGS rating is ±20V per the datasheet's Maximum Ratings table. Operation beyond ±15V risks permanent gate oxide damage, especially at elevated temperatures. For robust design, limit gate drive to +12V/−5V with active clamping or Zener protection.

Does DMTH8008LPSQ-13 require a gate resistor in typical automotive applications?

A gate resistor is recommended to dampen ringing and control dV/dt, particularly in high-frequency DC-DC converters. With 1.7 Ω intrinsic gate resistance and 41.2 nC QG, a 5–10 Ω external resistor provides optimal trade-off between switching speed and EMI suppression for 200–500 kHz operation.

How is thermal performance affected if the exposed drain pad is not soldered to PCB copper?

Without soldering the exposed drain pad to ≥1 in² 2oz copper, RθJC degrades from 1.5°C/W to >10°C/W, causing junction temperature to exceed 175°C at <30A. Thermal vias under the pad and connection to inner-layer ground planes are mandatory for rated current operation.

Is DMTH8008LPSQ-13 suitable for synchronous rectification in isolated flyback converters?

Yes - its 61 ns body diode reverse recovery time and low QRR (181 nC) enable efficient synchronous rectification at up to 300 kHz. However, ensure gate drive maintains VGS > 4.5V during conduction to avoid body diode conduction and associated losses.

DMTH8008LPSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
91A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
41.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2345 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta), 100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5060-8

DMTH8008LPSQ-13 FAQ

1.How can I place an order for DMTH8008LPSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH8008LPSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH8008LPSQ-13 reliable?

The price and inventory of DMTH8008LPSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8008LPSQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH8008LPSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8008LPSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH8008LPSQ-13?

DMTH8008LPSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH8008LPSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH8008LPSQ-13?

For technical support, including DMTH8008LPSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8008LPSQ-13 requirements.

6.How does Aetrix verify that DMTH8008LPSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH8008LPSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8008LPSQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH8008LPSQ-13?

All DMTH8008LPSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8008LPSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH8008LPSQ-13 part is unused and in its original packaging.

Return procedure for DMTH8008LPSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH8008LPSQ-13 Tags

  • DMTH8008LPSQ-13
  • DMTH8008LPSQ-13 PDF
  • DMTH8008LPSQ-13 Datasheet
  • DMTH8008LPSQ-13 Specifications
  • DMTH8008LPSQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMTH8008LPSQ-13
  • Buy DMTH8008LPSQ-13
  • DMTH8008LPSQ-13 Price
  • DMTH8008LPSQ-13 Distributor
  • DMTH8008LPSQ-13 Supplier
  • DMTH8008LPSQ-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER