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Diodes Incorporated DMTH8008SFG-7
- Part No.:
- DMTH8008SFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH8008SFG-7.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI33
- Quantity:
- Payment:
- Shipping:
Inventory:3,262
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Product details
Overview
DMTH8008SFG from Diodes Incorporated is an 80V, 68A N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, featuring 7 mΩ RDS(ON) @ VGS = 10V, +175°C rated junction temperature, and 100% production-tested UIS robustness. It serves as a high-current synchronous rectifier or main switch in DC-DC converters for industrial power supplies.
For engineers reviewing the DMTH8008SFG datasheet, DMTH8008SFG pinout, DMTH8008SFG application, or DMTH8008SFG equivalent, key selection criteria include its low RDS(ON) at 6V gate drive (10.5 mΩ), Qgd × RDS(ON) figure-of-merit, thermal resistance of 3.0°C/W (junction-to-case), and compatibility with compact high-density board layouts requiring <33% the area of SO-8.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched and synchronous buck topologies. Its gate threshold voltage (2–4 V) enables reliable turn-on with standard 5V or 3.3V logic-level drivers, while its 1.8 Ω gate resistance supports controlled dV/dt without external gate resistors in many applications.
The device integrates a robust body diode with 40.6 ns reverse recovery time and 50.9 nC QRR, enabling efficient freewheeling in continuous-conduction-mode converters. Its 174.85 mJ avalanche energy rating and 18.7 A IAS support unclamped inductive switching under transient fault conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Withstands up to 80V drain-source blocking voltage, suitable for 48V input bus systems with margin. |
| RDS(ON) | 7 mΩ @ VGS = 10V - Delivers ≤0.67 W conduction loss at 68A, critical for high-efficiency 12V/5V point-of-load converters. |
| ID (TC = 25°C) | 68 A - Supports high-current output stages without paralleling, reducing component count and layout complexity. |
| TJ max | +175°C - Enables operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial motor drives). |
| Qgd | 8.6 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves efficiency in high-frequency (>500 kHz) operation. |
| RθJC | 3.0°C/W - Enables direct thermal coupling to heatsinks or copper planes, supporting >40W continuous power dissipation with proper PCB layout. |
| EAS | 174.85 mJ - Confirmed avalanche energy rating ensures reliability during inductive load transients without derating. |
Pinout & Package
Package: PowerDI®3333-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad; footprint occupies only 33% of SO-8 area while delivering 3× higher power density and 46°C/W RθJA on 2oz copper board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection for all internal dies; tied to PCB ground plane for low-inductance return path. |
| 5, 6, 7, 8 | Drain | Exposed drain pad and four top-side pins form parallel current paths; connects directly to high-current output node or heatsink. |
| Gate | Control input | Pin 1 (top-left corner, marked "HZ8") - accepts 0–20V gate drive; 2–4V VGS(TH) ensures compatibility with 3.3V/5V controllers. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness per JEDEC JESD24-11, eliminating need for external snubbers in flyback or boost converters. |
| Low Qgd × RDS(ON) FOM | 60.2 mΩ·nC - Optimized for high-frequency switching efficiency; reduces switching losses by ≥15% vs. comparable SO-8 MOSFETs at 1 MHz. |
| Thermally efficient PowerDI3333-8 | 3.0°C/W RθJC - Enables >50W pulsed power handling and stable operation at TJ = 175°C with minimal heatsinking. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (≤900 ppm Br/Cl, ≤1000 ppm Sb); matte tin finish ensures solderability and long-term reliability. |
Applications
| Industrial DC-DC Converters | Automotive LED Backlighting |
|---|---|
Use Scenario: 48V-to-12V isolated buck converter in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier operating at 300 kHz with 68A peak current. Use Value: 7 mΩ RDS(ON) reduces conduction loss by 42% vs. 12 mΩ alternatives, improving full-load efficiency from 92.1% to 94.3%. |
Use Scenario: High-brightness LCD backlight driver in commercial vehicle infotainment displays. IC Role / Device Role / Timing Role: PWM-controlled current sink for 24-LED strings with 3A per string. Use Value: +175°C rating allows placement near display heat sources without derating; 10.5 mΩ RDS(ON) @ 6V enables direct microcontroller drive. |
| Server VRM Power Stages | Industrial Motor Drive Gate Drivers |
Use Scenario: 12V input, 0.8V/120A output multiphase buck stage in AI accelerator card power delivery. IC Role / Device Role / Timing Role: High-side switch in interleaved phase-leg with 1 MHz switching frequency. Use Value: 8.6 nC Qgd limits Miller plateau time to <15 ns, enabling clean gate drive and reduced shoot-through risk. |
Use Scenario: Half-bridge high-side switch in 24V brushless DC motor control for HVAC blowers. IC Role / Device Role / Timing Role: 80V-rated switch handling inductive kickback during PWM commutation. Use Value: 174.85 mJ EAS withstands repeated 100V inductive spikes without degradation, extending field lifetime beyond 10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH8008SPS-13 | Same die, SO-8 package - RθJA = 62°C/W (vs. 46°C/W), RDS(ON) = 7.5 mΩ @ 10V due to larger bondwire resistance. | Larger footprint; unsuitable for ultra-dense layouts but offers easier hand-soldering and legacy board compatibility. | Select when thermal budget permits higher RθJA and SO-8 footprint is already standardized. |
| IPB070N15N5 | 150V rating, 7.0 mΩ RDS(ON), TO-263 package - RθJC = 2.5°C/W but requires through-hole heatsink mounting. | Higher voltage margin for 72V battery systems; not drop-in due to different package, pinout, and thermal interface. | Select only if 150V blocking is required and board space allows TO-263 footprint and mechanical heatsinking. |
Compared with DMTH8008SPS-13 and IPB070N15N5, the DMTH8008SFG uniquely balances ultra-low RDS(ON), industry-leading power density, and +175°C operation in a surface-mount package-making it optimal for next-generation compact, high-temperature industrial and automotive power stages where thermal and spatial constraints dominate.
Availability
DMTH8008SFG is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive LED backlighting, and server VRM power stages requiring stable component supply, long-lifecycle assurance, and traceable green sourcing.
Supply support for DMTH8008SFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This MOSFET belongs to Diodes' PowerDI®3333-8 high-current logic-level portfolio, engineered specifically for high-efficiency, high-power-density DC-DC conversion in space-constrained industrial and automotive applications.
FAQ
What is the maximum gate-source voltage rating for DMTH8008SFG?
The absolute maximum gate-source voltage is ±20 V, as specified in the Maximum Ratings table. Exceeding this may cause irreversible gate oxide damage. For reliable operation, gate drive should be limited to 12 V maximum in production designs, with transient overshoot suppressed to <15 V using clamping or RC networks.
Does DMTH8008SFG require a gate resistor for typical 3.3V MCU drive?
Yes - although its gate threshold is as low as 2 V, a 10–22 Ω series gate resistor is recommended to dampen ringing caused by the 1.8 Ω intrinsic gate resistance interacting with PCB trace inductance. This prevents false turn-on during fast dv/dt events and ensures clean switching transitions at frequencies above 200 kHz.
How does the PowerDI3333-8 package improve thermal performance over SO-8?
The PowerDI3333-8 uses an exposed drain pad soldered directly to a large PCB copper area, achieving RθJC = 3.0°C/W versus ~6°C/W for SO-8. Its 33% smaller footprint also reduces thermal coupling between adjacent components, allowing tighter layout without compromising junction temperature rise under 68A continuous current.
Is DMTH8008SFG qualified for automotive applications?
The base part DMTH8008SFG is industrial-grade; however, the automotive-qualified variant DMTH8008SFGQ is available under a separate datasheet (DS42150Q). It undergoes AEC-Q101 stress testing and includes extended temperature screening, but shares identical electrical specs, pinout, and package dimensions.
DMTH8008SFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 31.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1945 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMTH8008SFG-7 FAQ
1.How can I place an order for DMTH8008SFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH8008SFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH8008SFG-7 reliable?
The price and inventory of DMTH8008SFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8008SFG-7 is usually 5 days.
3.What payment methods are accepted for DMTH8008SFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8008SFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH8008SFG-7?
DMTH8008SFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH8008SFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH8008SFG-7?
For technical support, including DMTH8008SFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8008SFG-7 requirements.
6.How does Aetrix verify that DMTH8008SFG-7 is sourced from the original manufacturer or authorized distributors?
All DMTH8008SFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8008SFG-7 meets industry standards.
7.What is the process for return or replacement of DMTH8008SFG-7?
All DMTH8008SFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8008SFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH8008SFG-7 part is unused and in its original packaging.
Return procedure for DMTH8008SFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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