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Diodes Incorporated DMTH8008SFGQ-13
- Part No.:
- DMTH8008SFGQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMTH8008SFGQ-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI33
- Quantity:
- Payment:
- Shipping:
Inventory:4,729
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Product details
Overview
DMTH8008SFGQ-13 from Diodes Incorporated is an AEC-Q101-qualified 80V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, delivering 7 mΩ RDS(ON) @ VGS = 10 V, 68 A continuous drain current at TC = +25°C, and rated for operation up to +175°C junction temperature. It serves as a high-efficiency power switch in automotive DC-DC converters, backlighting drivers, and power-management circuits.
For engineers reviewing the DMTH8008SFGQ-13 datasheet, DMTH8008SFGQ-13 pinout, DMTH8008SFGQ-13 application, or DMTH8008SFGQ-13 equivalent, key selection criteria include its low RDS(ON), robust UIS capability (18.7 A/174.85 mJ), thermally efficient PowerDI3333-8 footprint, and AEC-Q101 qualification with PPAP support.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for high-current, high-temperature automotive switching. Its gate threshold voltage (2–4 V) enables reliable turn-on with standard 5 V or 10 V logic-level drive, while its low Qgd × RDS(ON) figure of merit minimizes switching losses in hard-switched DC-DC topologies.
The device integrates a robust body diode with tRR = 40.6 ns and QRR = 50.9 nC, supporting synchronous rectification and freewheeling in buck and boost converters. Thermal design is enabled by RθJC = 3.0°C/W and an exposed drain pad compatible with high-copper PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Withstands peak system voltages in 48 V automotive architectures and 24 V industrial rails. |
| RDS(ON) | 7 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 14 A, critical for thermal management in compact modules. |
| ID (continuous) | 68 A @ TC = +25°C - Supports high-current output stages without external heatsinking under controlled case conditions. |
| Qg | 31.7 nC @ VGS = 10 V - Determines gate driver strength requirement; enables <100 ns switching transitions with 3 A drivers. |
| EAS | 174.85 mJ - Guarantees single-pulse avalanche survivability in inductive load transients common in motor drives and solenoid control. |
| TJ max | +175°C - Allows operation in engine bay or transmission-control environments where ambient exceeds +125°C. |
| Ciss | 1945 pF @ VDS = 40 V - Impacts high-frequency gate drive impedance matching and EMI filtering requirements. |
Pinout & Package
Package: PowerDI®3333-8 - Thermally enhanced surface-mount package with exposed drain pad, 3.3 mm × 3.3 mm footprint, 0.8 mm height, and UL 94V-0 molding compound. Occupies only 33% board area vs. SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection for internal parallel die; low-inductance return path for high di/dt currents. |
| 5, 6, 7, 8 | Drain | Exposed copper pad (pins 5–8 bottom-side) - primary thermal path to PCB; must be soldered to ≥1 in² 2 oz copper plane. |
| Gate | Control input | Pin 1 top-side (marked "G" in diagram); requires <10 Ω series resistance to damp ringing due to Rg = 1.8 Ω. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Ensures every unit withstands unclamped inductive switching events up to 18.7 A/174.85 mJ - eliminates field failure risk in relay/solenoid drive. |
| Low Qgd × RDS(ON) FOM | Reduces Miller-induced shoot-through and switching energy loss - improves efficiency in 200–500 kHz DC-DC converters. |
| AEC-Q101 qualified + PPAP capable | Validated for automotive use per stress test standards including HTGB, HTRB, and TC; supports Tier-1 BOM release with full change control. |
| Thermally optimized footprint | PowerDI3333-8 delivers 50 W power dissipation at TC = +25°C - enables higher power density than SO-8 in space-constrained ADAS modules. |
| Green, RoHS-compliant construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); matte tin annealed finish ensures MIL-STD-202-compliant solderability. |
Applications
| Automotive LED Backlighting | 48V-to-12V DC-DC Converter |
|---|---|
|
Use Scenario: High-brightness LCD cluster backlight dimming in instrument panels with PWM frequencies >1 kHz. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling current through LED strings. Use Value: 7 mΩ RDS(ON) limits conduction loss to <1.4 W at 14 A, enabling passive cooling and meeting ASIL-B thermal derating requirements. |
Use Scenario: Primary-side high-side switch in 48 V automotive bus step-down converter powering infotainment systems. IC Role / Device Role / Timing Role: Main power switch operating at 300 kHz with 50% duty cycle in synchronous buck topology. Use Value: Low Qgd (8.6 nC) and fast tF (17.3 ns) minimize dead-time losses and improve light-load efficiency above 92%. |
| Engine Control Unit (ECU) Power Management | Electric Power Steering (EPS) Motor Driver |
|
Use Scenario: Load switch for 12 V auxiliary rail powering sensors and CAN transceivers in engine compartment. IC Role / Device Role / Timing Role: Hot-swap protection switch with controlled turn-on via gate resistor network. Use Value: +175°C rating ensures stable operation at TJ = +150°C under sustained 40 A pulsed loads during cold cranking. |
Use Scenario: Half-bridge high-side switch in 3-phase EPS motor gate driver stage. IC Role / Device Role / Timing Role: Fast-switching power transistor handling 60 A peak phase current with 10 μs pulse width. Use Value: 272 A pulsed drain current rating and 100% UIS testing prevent failure during motor stall or short-circuit events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL135N8F7AG | 80 V, 1.35 mΩ @ 10 V, TO-263-7 package - lower RDS(ON) but larger footprint and no AEC-Q101 documentation on public datasheet. | Requires larger PCB area and additional thermal vias; lacks PPAP documentation for Tier-1 automotive programs. | Select when ultra-low conduction loss dominates over board space and qualification traceability. |
| IXTQ80N10P | 100 V, 10 mΩ @ 10 V, TO-220AB package - higher voltage rating but 43% higher RDS(ON) and no +175°C rating. | Suitable for industrial 100 V systems but not qualified for automotive underhood environments. | Select only for non-automotive 100 V applications where thermal margin allows higher on-resistance. |
Compared with STL135N8F7AG and IXTQ80N10P, DMTH8008SFGQ-13 uniquely balances AEC-Q101 compliance, +175°C operation, 7 mΩ RDS(ON), and 3.3 mm × 3.3 mm footprint - making it optimal for space- and temperature-constrained automotive power stages.
Availability
DMTH8008SFGQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, 48V-to-12V DC-DC conversion, and ECU power management requiring stable component supply across multi-year vehicle production cycles.
Supply support for DMTH8008SFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, computing, and consumer markets.
This device belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for high-reliability automotive power conversion and load switching where thermal resilience and process-controlled UIS robustness are mandatory.
FAQ
What is the maximum allowable gate-source voltage for DMTH8008SFGQ-13?
The absolute maximum VGS is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±20 V risks permanent gate oxide damage. For reliable 10 V drive, a 12 V gate supply with 10 Ω series resistor and TVS clamp to ground is recommended to suppress overshoot during fast switching.
Does DMTH8008SFGQ-13 require a heatsink in typical automotive applications?
No external heatsink is required if the PCB provides adequate thermal conduction: minimum 1 in² of 2 oz copper connected to the exposed drain pad (pins 5–8), with thermal vias to inner layers. At 68 A continuous, case temperature must be maintained ≤ +100°C to stay within safe SOA limits per Figure 12.
How does the body diode performance compare to discrete Schottky alternatives?
The integrated body diode has VSD = 0.8–1.2 V at 14 A and tRR = 40.6 ns - slower and higher forward drop than Schottky diodes, but sufficient for synchronous rectification in buck converters up to 500 kHz. For ultra-low VF requirements, external Schottky co-packaging is possible but adds cost and layout complexity.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes - the package is rated for moisture sensitivity level 1 (MSL-1) and supports JEDEC J-STD-020D-compliant lead-free reflow with peak temperature ≤ 260°C. Recommended profile includes ramp rate ≤ 3°C/s, soak at 150–200°C for 60–120 s, and time above liquidus (217°C) of 60–90 s.
DMTH8008SFGQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 31.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1945 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMTH8008SFGQ-13 FAQ
1.How can I place an order for DMTH8008SFGQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH8008SFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH8008SFGQ-13 reliable?
The price and inventory of DMTH8008SFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8008SFGQ-13 is usually 5 days.
3.What payment methods are accepted for DMTH8008SFGQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8008SFGQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH8008SFGQ-13?
DMTH8008SFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH8008SFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH8008SFGQ-13?
For technical support, including DMTH8008SFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8008SFGQ-13 requirements.
6.How does Aetrix verify that DMTH8008SFGQ-13 is sourced from the original manufacturer or authorized distributors?
All DMTH8008SFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8008SFGQ-13 meets industry standards.
7.What is the process for return or replacement of DMTH8008SFGQ-13?
All DMTH8008SFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8008SFGQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH8008SFGQ-13 part is unused and in its original packaging.
Return procedure for DMTH8008SFGQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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