Diodes Incorporated DMTH8008SFGQ-7

Overview

DMTH8008SFGQ from Diodes Incorporated is an AEC-Q101-qualified 80V N-channel enhancement-mode MOSFET in PowerDI®3333-8 package, delivering 7 mΩ R_DS(ON) @ V_GS = 10 V and 68 A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and supports automotive DC-DC converters, backlighting, and power-management functions.

For engineers reviewing the DMTH8008SFGQ datasheet, DMTH8008SFGQ pinout, DMTH8008SFGQ application, or DMTH8008SFGQ equivalent, key selection criteria include its low R_DS(ON), 100% production-tested UIS robustness, thermally efficient PowerDI3333-8 footprint, and AEC-Q101 qualification with PPAP support.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-current, high-temperature automotive switching. Its gate threshold voltage (2–4 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while its low Q_gd × R_DS(ON) figure-of-merit minimizes switching losses in hard-switched DC-DC topologies.

The device integrates a robust body diode with t_RR = 40.6 ns and Q_RR = 50.9 nC, supporting synchronous rectification and freewheeling in buck and boost converters. Thermal resistance R_θJC = 3.0°C/W ensures effective heat transfer from junction to exposed drain pad under high-power operation.

Key Specifications

Pinout & Package

Package: PowerDI®3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad; 3.3 mm × 3.3 mm footprint occupying only 33% board area of SO-8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7AG and IPB180N08S4-02, DMTH8008SFGQ uniquely balances 80 V rating, 7 mΩ on-resistance, and 3.3 mm × 3.3 mm footprint-making it optimal for space-limited 48 V automotive DC-DC converters where voltage margin and thermal density are both critical.

Availability

DMTH8008SFGQ is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and engine control unit power stages requiring stable component supply across extended temperature and long-life production cycles.

Supply support for DMTH8008SFGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, serving automotive, industrial, computing, and consumer markets with AEC-Q101-qualified components and IATF 16949-certified production.

This device belongs to Diodes' PowerMOS™ automotive portfolio, engineered specifically for high-reliability, high-temperature switching in next-generation 48 V vehicle electrical architectures and ADAS power subsystems.

FAQ

What is the maximum allowable gate-source voltage for DMTH8008SFGQ?

The absolute maximum V_GS rating is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10 V for full enhancement or 6 V for reduced R_DS(ON) (10.5 mΩ), with transient overshoot suppressed using RC snubbers or active clamping.

Does DMTH8008SFGQ require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 500 kHz operation with a 1-A peak gate driver, a 6 Ω resistor is validated per datasheet test conditions (t_D(ON), t_R). Lower values (2–3 Ω) may be used with stronger drivers to reduce switching time, provided ringing is mitigated by layout optimization.

How is thermal performance affected when mounted on standard FR-4 versus a 2 oz copper thermal pad?

On standard FR-4 (Note 5), R_θJA = 125°C/W limits usable power to ~1.2 W. With a 2 oz copper thermal pad (Note 6), R_θJA drops to 46°C/W, enabling ~3.2 W. Full-rated 50 W operation requires mounting to a heatsink via the exposed drain pad (R_θJC = 3.0°C/W).

Is DMTH8008SFGQ suitable for synchronous rectification in a buck converter?

Yes-the body diode has t_RR = 40.6 ns and Q_RR = 50.9 nC, enabling efficient synchronous operation up to 500 kHz. Its low R_DS(ON) reduces forward conduction loss versus Schottky alternatives, and the AEC-Q101 qualification ensures reliability in automotive synchronous buck designs.