Diodes Incorporated DMTH8008SPSQ-13

Overview

DMTH8008SPSQ from Diodes Incorporated is an AEC-Q101-qualified 80V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous operation at +175°C junction temperature, with R_DS(ON) = 7.8 mΩ @ V_GS = 10 V and I_D = 92 A @ T_C = +25°C. It delivers high-efficiency switching in automotive DC-DC converters and load switches.

For engineers reviewing the DMTH8008SPSQ datasheet, DMTH8008SPSQ pinout, DMTH8008SPSQ application, or DMTH8008SPSQ equivalent, key selection criteria include its 100% production-tested UIS capability, low R_DS(ON) at elevated temperature, AEC-Q101 qualification with PPAP support, and thermal performance under high ambient conditions.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and robust avalanche energy handling (E_AS = 80 mJ). Its gate threshold voltage (V_GS(TH) = 2–4 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates an intrinsic body diode with t_RR = 43 ns and Q_RR = 49 nC at di/dt = 100 A/μs, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance R_θJC = 1.5 °C/W supports high-power density mounting on thermally enhanced PCBs.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad for low R_θJC (1.5 °C/W), UL 94V-0 molding compound, and matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N6F7AG and IXTP80N10P, DMTH8008SPSQ uniquely combines 80 V rating, AEC-Q101 qualification, PowerDI5060-8 thermal performance, and production UIS validation - making it the only drop-in solution for 12 V/48 V automotive power stages requiring PPAP traceability and +175°C operation.

Availability

DMTH8008SPSQ is available at Aetrix Electronics and suitable for automotive DC-DC converters, engine control unit load switches, and on-board charger auxiliary supplies requiring stable component supply across extended product lifecycles.

Supply support for DMTH8008SPSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

This device belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for high-temperature, high-reliability switching in engine control, battery management, and ADAS subsystems.

FAQ

What is the maximum allowable gate-source voltage for DMTH8008SPSQ?

The absolute maximum V_GS is ±20 V per the datasheet's Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to +10 V to +15 V for full enhancement and avoid overshoot exceeding +18 V using proper layout and gate resistors.

Does DMTH8008SPSQ require a heatsink when operating at 92 A?

No discrete heatsink is required, but thermal design must follow the recommended 1-inch square 2 oz copper pad per the datasheet's Note 8. At 92 A continuous, junction temperature remains within +175°C limit only with that PCB layout; smaller pads or single-layer boards will exceed T_J max and require current derating.

Is the body diode in DMTH8008SPSQ suitable for synchronous rectification?

Yes - its body diode has t_RR = 43 ns and Q_RR = 49 nC at di/dt = 100 A/μs, enabling use in synchronous buck topologies up to 500 kHz. However, external Schottky diodes may still be preferred in ultra-high-frequency (>1 MHz) or ultra-low-loss designs due to lower Q_RR.

How does the R_DS(ON) change over temperature, and what is its value at +150°C?

R_DS(ON) increases linearly with junction temperature. From Figure 6, normalized R_DS(ON) at +150°C is ~1.9× the 25°C value. At V_GS = 10 V, R_DS(ON) ≈ 14.8 mΩ (+150°C), confirmed by Figure 7 showing ~0.012 Ω at 150°C and 14 A.