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Diodes Incorporated DMTH8012LK3-13

Part No.:
DMTH8012LK3-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixDMTH8012LK3-13.pdf
Description:
MOSFET N-CH 80V 50A TO252
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,568

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Product details

Overview

DMTH8012LK3-13 from Diodes Incorporated is an 80V, 50A N-channel enhancement-mode MOSFET in TO252 (DPAK) package, featuring 16mΩ RDS(ON) at VGS = 10V and rated for continuous operation up to +175°C junction temperature. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and synchronous rectifiers in automotive and industrial power supplies.

For engineers reviewing the DMTH8012LK3-13 datasheet, DMTH8012LK3-13 pinout, DMTH8012LK3-13 application, or DMTH8012LK3-13 equivalent, key selection criteria include RDS(ON) @ 4.5V/10V, thermal resistance (RθJC = 1.26°C/W), avalanche energy (EAS = 147mJ), and TO252 package compatibility with high-power PCB layouts.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining robust switching performance: Ciss = 1949pF and Qg = 34nC at VGS = 10V enable efficient gate drive in hard-switched topologies. Its body diode exhibits tRR = 30.2ns and Qrr = 34.6nC, supporting high-frequency synchronous rectification.

The device is characterized across -55°C to +175°C, with RDS(ON) normalized to ≤1.9× at 175°C (VGS = 10V), and features a gate threshold voltage VGS(TH) of 1.0–3.0V - ensuring reliable turn-on with standard 3.3V/5V logic-level drivers under wide temperature conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 80V - Supports 48V input rails with 20% derating margin in industrial DC-DC stages
RDS(ON) max 16mΩ @ VGS = 10V - Enables <1.2W conduction loss at 30A, critical for thermally constrained designs
ID max 50A @ TC = +25°C - Sustains high pulsed load currents in motor drives and power tool controllers
RθJC 1.26°C/W - Allows direct heatsink mounting for >100W dissipation with minimal thermal interface resistance
EAS 147mJ - Withstands repetitive inductive switching stress without failure in flyback or buck-boost converters
tRR 30.2ns - Minimizes reverse-recovery losses in synchronous rectifier applications operating above 300kHz
TJ range -55°C to +175°C - Qualified for under-hood automotive modules and industrial motor control enclosures

Pinout & Package

TO252 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain connects directly to the large copper slug on the bottom side.

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control terminal Receives 0–10V logic-level signal; low input capacitance (Ciss = 1949pF) reduces driver power demand
Drain (D) High-side power node Connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential
Source (S) Return path / reference node Serves as common return for gate drive and load current; low-inductance layout essential for EMI control

Key Features

Feature Design Value
+175°C rated junction temperature Enables operation in engine bay, solar inverters, and sealed industrial enclosures without forced cooling
16mΩ RDS(ON) @ 10V Reduces I²R losses by ≥25% vs. comparable 80V MOSFETs, improving full-load efficiency in 12–48V systems
Low Qgd/Qg ratio (4.5/34 nC) Improves switching speed control and reduces Miller-induced shoot-through risk in half-bridge configurations
RoHS-compliant, halogen-free "Green" construction Meets IPC-1752A material declaration requirements for automotive and medical OEM supply chains
147mJ single-pulse avalanche rating Eliminates need for external snubbers in inductive load switching, simplifying BOM and layout

Applications

Automotive DC-DC Converters Industrial Motor Drives

Use Scenario: 12V-to-5V/3.3V step-down converter powering ADAS sensors and infotainment ECUs in vehicles.

IC Role / Device Role: High-side synchronous rectifier switch in buck topology, operating at 500kHz.

Use Value: Low RDS(ON) and fast tF = 3.5ns minimize conduction and switching losses, enabling >95% efficiency at 25A output.

Use Scenario: Half-bridge leg in 24V brushless DC motor controller for HVAC blowers and factory automation actuators.

IC Role / Device Role: Low-side switching element handling 40A peak phase current with PWM frequency up to 20kHz.

Use Value: 175°C rating ensures reliability during sustained stall conditions; low Qg enables clean gate drive with 1A drivers.

LED Backlighting Supplies Telecom Power Modules

Use Scenario: Constant-current LED driver for commercial signage using boost architecture with 48V input.

IC Role / Device Role: Main switching FET controlling inductor current in high-side configuration.

Use Value: Low Coss = 177pF minimizes turn-off loss; tight VGS(TH) distribution (1.0–3.0V) ensures consistent startup across temperature.

Use Scenario: OR-ing FET in redundant 54V intermediate bus architecture for 5G base station power shelves.

IC Role / Device Role: Hot-swap and reverse-current blocking device placed between input and load.

Use Value: Body diode forward voltage VSD = 0.9–1.2V at 25A reduces forward drop vs. Schottky alternatives; RDS(ON) stability over temperature prevents thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay SIHF80N08-17 RDS(ON) = 17mΩ @ 10V; RθJC = 1.5°C/W; lower EAS (110mJ); TO220 package Requires through-hole assembly and larger heatsink footprint; less suitable for space-constrained SMT designs Prefer when legacy TO220 footprint compatibility is required and thermal budget allows higher RθJC
ON Semi NTMFS5C673NL RDS(ON) = 13.5mΩ @ 10V; smaller Power56 package; RθJC = 1.6°C/W; no 175°C rating (150°C max) Better RDS(ON) but limited high-temp capability; unsuitable for under-hood or high-ambient industrial use Choose only for compact consumer-grade 48V systems where ambient stays below 105°C

Compared with SIHF80N08-17 and NTMFS5C673NL, DMTH8012LK3-13 uniquely balances ultra-low RDS(ON), industry-leading 175°C rating, and TO252's optimal thermal-electrical tradeoff - making it the preferred choice for high-reliability, high-power-density SMT power stages.

Availability

DMTH8012LK3-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and telecom power modules requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for DMTH8012LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, automotive, and computing markets.

DMTH8012LK3 belongs to Diodes' high-voltage, high-current TrenchMOS™ family, engineered specifically for thermally demanding power conversion applications where efficiency, ruggedness, and long-term reliability are non-negotiable.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The DMTH8012LK3-13 supports 35A continuous drain current at TC = +100°C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO252 package under real-world heatsinking conditions and must be validated against board layout and airflow in final design.

Is this MOSFET suitable for logic-level gate drive from a 3.3V microcontroller?

No - while VGS(TH) starts at 1.0V, full enhancement requires ≥4.5V for acceptable RDS(ON) (21mΩ max). At 3.3V, RDS(ON) exceeds 40mΩ, causing excessive conduction loss. A gate driver or level shifter is required for reliable 3.3V control.

Does the DMTH8012LK3-13 have avalanche capability, and is it tested?

Yes - it is rated for 147mJ single-pulse avalanche energy (EAS) under specified test conditions (L = 60mH). This rating is guaranteed by design per the datasheet and verified during qualification, not just typical characterization.

How does the TO252 package compare thermally to TO263 (D2PAK) for this device?

TO252 offers lower RθJC (1.26°C/W) than typical TO263 variants due to optimized internal die attach and shorter thermal path. However, TO263 provides larger copper area for PCB heat spreading. For DMTH8012LK3-13, TO252 achieves superior junction-to-case transfer, making it more effective when mounted directly to a heatsink.

DMTH8012LK3-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
80 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1949 pF @ 40 V
FET Feature:
-
Power Dissipation (Max):
2.6W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-3

DMTH8012LK3-13 FAQ

1.How can I place an order for DMTH8012LK3-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH8012LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH8012LK3-13 reliable?

The price and inventory of DMTH8012LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8012LK3-13 is usually 5 days.

3.What payment methods are accepted for DMTH8012LK3-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8012LK3-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH8012LK3-13?

DMTH8012LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH8012LK3-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH8012LK3-13?

For technical support, including DMTH8012LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8012LK3-13 requirements.

6.How does Aetrix verify that DMTH8012LK3-13 is sourced from the original manufacturer or authorized distributors?

All DMTH8012LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8012LK3-13 meets industry standards.

7.What is the process for return or replacement of DMTH8012LK3-13?

All DMTH8012LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8012LK3-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH8012LK3-13 part is unused and in its original packaging.

Return procedure for DMTH8012LK3-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMTH8012LK3-13 Tags

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