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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH8012LK3Q-13

Name: DMTH8012LK3Q-13
Brand: Diodes Incorporated
SKU: DMTH8012LK3Q-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH8012LK3Q-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: DMTH8012LK3Q-13.pdf

Description:: MOSFET N-CH 80V 50A TO252

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Product details

Overview

DMTH8012LK3Q-13 from Diodes Incorporated is an AEC-Q101-qualified 80V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, delivering 16 mΩ R_DS(ON) at V_GS = 10 V and 50 A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and supports automotive engine management units, motor control, and DC-DC converters.

For engineers reviewing the DMTH8012LK3Q-13 datasheet, DMTH8012LK3Q-13 pinout, DMTH8012LK3Q-13 application, or DMTH8012LK3Q-13 equivalent, key selection criteria include its 1.26°C/W R_θJC, 24.1 nC Q_g at 4.5 V, 33.5 ns body diode t_RR, and AEC-Q101 qualification with PPAP support for automotive-grade reliability validation.

Technical Context

This MOSFET employs planar trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive power stages. Its gate threshold voltage (1–3 V) enables robust drive compatibility with 3.3 V and 5 V controllers, while the 2051 pF C_iss and 24.6 pF Cr_ss support stable high-frequency operation up to 1 MHz.

The device integrates a low-V_SD body diode (0.9–1.2 V at 25 A) with 38.9 nC Q_RR, minimizing reverse-recovery losses in synchronous rectification and bidirectional power conversion. Thermal design is enabled by its 1.26°C/W R_θJC and 47°C/W R_θJA on FR-4 with 1-inch² copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Withstands transient overvoltage up to 80 V in automotive 42 V systems without breakdown.
R_DS(ON)	16 mΩ @ V_GS = 10 V - Enables ≤0.8 W conduction loss at 20 A, critical for thermal budget in compact DC-DC modules.
I_D (continuous)	50 A @ T_C = +25°C - Supports high-current motor phase legs and primary-side switches in 1–3 kW inverters.
t_RR	33.5 ns - Reduces switching loss and EMI during hard-commutation in synchronous buck and half-bridge topologies.
R_θJC	1.26°C/W - Allows direct heatsink mounting for >100 W power dissipation with <130°C junction rise at 100 W.
Q_g	46.8 nC @ V_GS = 10 V - Determines gate driver current requirement (~1.9 A peak for 25 ns turn-on with 1.6 Ω R_G).
T_J max	+175°C - Certified for under-hood applications including engine control modules exposed to sustained high ambient temperatures.

Pinout & Package

Package: TO252 (DPAK), surface-mount, thermally enhanced plastic housing with exposed drain pad for PCB heat transfer. Molded compound rated UL 94V-0; matte tin annealed terminals solderable per MIL-STD-202, Method 208.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current and body diode return path.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring <46.8 nC charge; sensitive to ESD and ringing; requires RC snubber if driven by high-Z sources.
Pin 3 (Drain)	Power output (D)	Exposed metal pad (top view) tied internally to drain; must be connected to large copper pour for thermal conduction and current handling.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Validated for automotive production use with change control, IATF 16949 manufacturing, and full traceability.
175°C maximum junction temperature	Enables operation in engine bay environments where ambient exceeds 125°C without derating or thermal shutdown.
16 mΩ R_DS(ON) @ 10 V	Reduces I²R losses by >30% vs. comparable 20 mΩ devices, improving efficiency in 12–48 V battery-fed systems.
33.5 ns body diode t_RR	Lowers reverse recovery energy (E_RR) to <1.3 μJ at 12 A, reducing shoot-through risk and gate driver stress in synchronous rectifiers.
RoHS 3 & Halogen-free "Green"	Complies with EU Directive 2015/863/EU and Diodes' green definition (<900 ppm Br/Cl, <1000 ppm Sb), supporting eco-design mandates.

Applications

Engine Management Units

Motor Control

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems operating at 12–14 V battery supply with 5–10 ms pulse widths.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation; handles repetitive 50 A peak pulses with <100 ns turn-off to prevent coil saturation.

Use Value: 16 mΩ R_DS(ON) limits voltage drop to <0.8 V at 50 A, preserving injector coil voltage margin and ensuring precise fuel metering accuracy.

Use Scenario: Low-side phase leg switch in 48 V BLDC motor controller for electric power steering (EPS), switching at 20 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier in three-phase inverter; conducts continuous 43 A at 4.5 V gate drive with minimal conduction loss.

Use Value: 21 mΩ R_DS(ON) @ 4.5 V ensures <0.4 W loss per phase at 20 A RMS, enabling compact heatsink design and meeting ASIL-B thermal safety targets.

DC-DC Converters

Start-Stop Systems

Use Scenario: Primary-side switch in 48 V–12 V bidirectional buck-boost converter for mild hybrid vehicles, operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-efficiency power transistor with fast 6.5 ns rise time and 4.7 ns fall time; manages 80 A pulsed current during boost mode.

Use Value: 24.1 nC Q_g at 4.5 V reduces gate drive power to <12 mW at 200 kHz, lowering auxiliary supply burden and improving light-load efficiency.

Use Scenario: Load switch isolating starter battery from 12 V auxiliary bus during engine cranking, handling 100 A inrush with <10 ms response.

IC Role / Device Role / Timing Role: Robust power FET with 147 mJ avalanche energy rating; clamps transients during load dump without failure.

Use Value: 147 mJ E_AS withstands ISO 7637-2 Pulse 5a (120 V/100 ms) without derating, eliminating need for external TVS in cost-sensitive start-stop modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V V_DSS, 2.2 mΩ R_DS(ON) @ 10 V, TO263 package, 175°C rated	Lower voltage rating limits use to 24–48 V systems; superior R_DS(ON) suits high-current, low-voltage traction inverters	Select when system V_bus ≤ 60 V and ultra-low conduction loss is prioritized over 80 V surge margin.
IXTP80N10P	100 V V_DSS, 10.5 mΩ R_DS(ON) @ 10 V, TO220 package, 175°C rated, not AEC-Q101 qualified	Higher voltage headroom but lacks automotive qualification; through-hole mounting increases assembly cost and thermal resistance	Choose only for industrial or non-automotive designs requiring >80 V tolerance and no PPAP documentation.

Compared with STL220N6F7 and IXTP80N10P, DMTH8012LK3Q-13 uniquely balances 80 V ruggedness, AEC-Q101 compliance, TO252 thermal performance, and 16 mΩ conduction loss-making it optimal for cost-constrained, space-limited automotive power stages where qualification and package form factor are mandatory.

Availability

DMTH8012LK3Q-13 is available at Aetrix Electronics and suitable for engine management units, motor control systems, and DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for DMTH8012LK3Q-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1964.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for under-hood and chassis-mounted power conversion where AEC-Q101 qualification, thermal resilience, and low R_DS(ON) are essential.

FAQ

What is the maximum allowable gate-source voltage for DMTH8012LK3Q-13?

The absolute maximum V_GS is ±20 V, per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to +10 V to +15 V for full enhancement and -5 V to -10 V for fast turn-off, with transient overshoot suppressed via gate resistors or Zener clamping.

Does DMTH8012LK3Q-13 require a heatsink in typical automotive applications?

Yes-when operating above ~15 A continuous current or in ambient temperatures >85°C, a PCB copper pour ≥1 inch² connected to the drain pad is mandatory. The 1.26°C/W R_θJC assumes direct thermal contact with a heatsink; without it, R_θJA rises to 47°C/W, limiting safe power dissipation to ~2.6 W on standard FR-4.

Is the body diode of DMTH8012LK3Q-13 suitable for synchronous rectification?

Yes-the body diode has a forward voltage of 0.9–1.2 V at 25 A and 33.5 ns reverse recovery time, verified in the Electrical Characteristics table. Its Q_RR of 38.9 nC enables efficient synchronous operation in buck converters up to 200 kHz, provided gate timing avoids shoot-through during commutation.

How does the R_DS(ON) change with temperature, and what is its impact on thermal design?

R_DS(ON) increases linearly with junction temperature: normalized to 1.0× at 25°C, it reaches ~1.8× at 175°C (per Figure 6). This positive TC enables current sharing in paralleled devices but requires derating-e.g., 16 mΩ at 25°C becomes ~29 mΩ at 150°C, raising conduction loss by >80% and demanding conservative thermal margins.

DMTH8012LK3Q-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2051 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 2.6W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252-3

DMTH8012LK3Q-13 FAQ

1.How can I place an order for DMTH8012LK3Q-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH8012LK3Q-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH8012LK3Q-13 reliable?

The price and inventory of DMTH8012LK3Q-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8012LK3Q-13 is usually 5 days.

3.What payment methods are accepted for DMTH8012LK3Q-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8012LK3Q-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH8012LK3Q-13?

DMTH8012LK3Q-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH8012LK3Q-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH8012LK3Q-13?

For technical support, including DMTH8012LK3Q-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8012LK3Q-13 requirements.

6.How does Aetrix verify that DMTH8012LK3Q-13 is sourced from the original manufacturer or authorized distributors?

All DMTH8012LK3Q-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8012LK3Q-13 meets industry standards.

7.What is the process for return or replacement of DMTH8012LK3Q-13?

All DMTH8012LK3Q-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8012LK3Q-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH8012LK3Q-13 part is unused and in its original packaging.

Return procedure for DMTH8012LK3Q-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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