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Diodes Incorporated DMTH8012LPS-13
- Part No.:
- DMTH8012LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH8012LPS-13.pdf
- Description:
- MOSFET N-CH 80V 10A PWRDI5060
- Quantity:
- Payment:
- Shipping:
Inventory:7,694
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Product details
Overview
DMTH8012LPS from Diodes Incorporated is an 80V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI®5060-8 package, delivering 17 mΩ RDS(ON) at VGS = 10 V and 50 A continuous drain current at TC = +25°C. It features low input capacitance (1949 pF), fast switching (tD(ON) = 4.9 ns), and integrated body diode with 30.2 ns reverse recovery time - optimized for high-efficiency DC-DC converters and synchronous rectification.
For engineers reviewing the DMTH8012LPS datasheet, DMTH8012LPS pinout, DMTH8012LPS application, or DMTH8012LPS equivalent, key selection criteria include its 1.5°C/W junction-to-case thermal resistance, 175°C maximum junction temperature rating, 100 W power dissipation at TC = +25°C, and automotive-qualified variant (DMTH8012LPSQ) for mission-critical power stages.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low RDS(ON) while maintaining robust avalanche capability (EAS = 10.2 mJ, IAS = 11.6 A). Its gate threshold voltage (1–3 V) enables reliable turn-on with standard 4.5 V logic-level drivers, and the 0.7 Ω gate resistance supports controlled switching transitions.
The PowerDI5060-8 package integrates an exposed drain pad for direct thermal coupling to PCB copper, enabling high-power operation without discrete heatsinks. Body diode performance is characterized with 0.9–1.2 V forward voltage at 20 A, supporting efficient freewheeling in buck and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Withstands up to 80 V drain-source blocking voltage in off-state, suitable for 48 V industrial bus and 60 V automotive subsystems. |
| RDS(ON) | 17 mΩ @ VGS = 10 V - Minimizes conduction loss in high-current paths; delivers <1.02 W I²R loss at 7.8 A RMS. |
| ID (TC = 25°C) | 50 A - Continuous drain current rating under ideal heatsink conditions, enabling single-device use in 100–200 W power stages. |
| TJ(max) | +175°C - Enables operation in high-ambient environments such as engine compartments or enclosed industrial enclosures. |
| Ciss | 1949 pF - Low input capacitance reduces gate drive power and improves switching efficiency above 500 kHz. |
| Qg (10 V) | 34 nC - Total gate charge determines driver strength requirement; compatible with common 1–2 A peak gate drivers. |
| tRR | 30.2 ns - Fast body diode recovery minimizes shoot-through risk and reduces snubber losses in synchronous rectifiers. |
Pinout & Package
Package: PowerDI®5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 4, 5, 6, 7) for low RθJC = 1.5°C/W; UL 94V-0 molded plastic housing; matte tin annealed terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Primary current return path; internally connected to three source leads (pins 1, 2, 3) for low-inductance layout. |
| 2 | Source | Parallel source connection to reduce conduction loop inductance and improve EMI performance. |
| 3 | Source | Third source terminal - enables Kelvin sensing or separate high-frequency return routing. |
| 4 | Drain | Exposed drain pad - primary thermal path to PCB; must be soldered to ≥1 in² 2 oz copper for rated 100 W dissipation. |
| 5 | Drain | Secondary drain connection - enhances current sharing and mechanical reliability of thermal interface. |
| 6 | Drain | Third drain terminal - supports uniform current distribution across large-area drain pad. |
| 7 | Drain | Fourth drain terminal - ensures full utilization of exposed pad area for thermal and electrical performance. |
| 8 | Gate | Control input - low 0.7 Ω gate resistance allows sharp edge control; requires <34 nC charge for full turn-on. |
Key Features
| Feature | Design Value |
|---|---|
| 175°C Junction Rating | Enables deployment in under-hood automotive, industrial motor drives, and sealed power supplies without derating at ambient >125°C. |
| Low RDS(ON) @ 4.5 V | 21 mΩ at VGS = 4.5 V supports direct drive from microcontroller GPIO or low-voltage PWM controllers without level-shifting. |
| JEDEC-AEC Qualified | Complies with AEC-Q101 stress test requirements - validated for automotive-grade reliability in vibration, temperature cycling, and HTRB. |
| Green Halogen-Free | Contains <900 ppm Br, <900 ppm Cl, and <1000 ppm Sb - meets RoHS 3 and automotive environmental compliance mandates. |
| Fast Body Diode Recovery | 30.2 ns tRR and 34.6 nC QRR reduce switching loss and voltage overshoot during hard commutation in synchronous buck converters. |
Applications
| Server VRM Power Stage | Automotive LED Headlamp Driver |
|---|---|
Use Scenario: High-density 48 V–12 V buck converter supplying CPU core voltage in data center servers. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 600 kHz with 50 A peak load current. Use Value: 17 mΩ RDS(ON) and 1.5°C/W RθJC enable >95% efficiency at full load while maintaining <100°C junction temperature on 2 oz copper. |
Use Scenario: Constant-current LED driver for adaptive front lighting systems (AFS) in passenger vehicles. IC Role / Device Role / Timing Role: Low-side PWM switch controlling 45 A LED string current with 100 Hz–2 kHz dimming frequency. Use Value: 175°C rating ensures uninterrupted operation during extended parking mode (TA = 105°C) without thermal shutdown or parameter drift. |
| Industrial 48 V DC-DC Converter | Telecom Base Station PSU |
Use Scenario: Isolated flyback or LLC resonant converter powering PLC I/O modules in factory automation cabinets. IC Role / Device Role / Timing Role: Primary-side switching FET handling 30 A pulsed drain current in 200 kHz hard-switched topology. Use Value: 200 A pulsed drain rating and 10.2 mJ avalanche energy allow safe operation during output short-circuit transients without external clamping. |
Use Scenario: Intermediate bus converter (48 V → 12 V) in 5G remote radio units with strict thermal envelope constraints. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 300 kHz with 45 A average output current. Use Value: 30.2 ns body diode recovery and low Coss (177 pF) minimize dead-time loss and improve light-load efficiency over legacy Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH8012LPSQ | Automotive-qualified variant per AEC-Q101; identical electrical specs but with extended traceability, PPAP documentation, and lot-level qualification testing. | Required for OEM automotive designs; not necessary for industrial or telecom where commercial qualification suffices. | Select DMTH8012LPSQ only when automotive PPAP compliance, zero-defect screening, or long-term supply assurance is contractually mandated. |
| IPB180N08S4-02 | 80 V, 180 A, 2.0 mΩ RDS(ON) in TO-263 package; higher current rating but larger footprint and 3× higher gate charge (105 nC). | Suitable for >100 A applications requiring lower conduction loss; unsuitable for space-constrained layouts or high-frequency (>300 kHz) operation. | Choose IPB180N08S4-02 only when board area permits TO-263 and system demands sub-2 mΩ RDS(ON) at cost of increased gate drive complexity and thermal mass. |
Compared with DMTH8012LPSQ, the base DMTH8012LPS offers identical performance in non-automotive settings with lower procurement overhead; versus IPB180N08S4-02, it trades absolute RDS(ON) for superior high-frequency efficiency, smaller footprint, and simpler gate drive - making it optimal for compact, high-switching-frequency power stages.
Availability
DMTH8012LPS is available at Aetrix Electronics and suitable for server VRM power stages, automotive LED headlamp drivers, and industrial 48 V DC-DC converters requiring stable component supply, JEDEC-compliant reliability, and RoHS 3 compliance.
Supply support for DMTH8012LPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection devices for industrial, computing, and automotive markets.
This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-temperature power conversion in space-constrained applications where thermal performance and switching speed are critical.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The DMTH8012LPS supports 36 A continuous drain current at TC = +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package under real-world PCB thermal conditions, not silicon capability.
Does this MOSFET require a gate resistor for stability in high-frequency switching?
Yes - a 5–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 0.7 Ω intrinsic gate resistance and 34 nC total gate charge, especially above 300 kHz.
Can DMTH8012LPS replace older 100 V MOSFETs in existing 48 V designs?
No - its 80 V VDSS rating is insufficient for 48 V systems with >20% transient overvoltage (e.g., ISO 7637-2 Pulse 5a); use only where worst-case bus voltage remains ≤64 V, such as regulated intermediate buses or isolated secondaries.
Is the exposed drain pad electrically isolated from other pins?
No - pins 4, 5, 6, and 7 are internally connected to the drain terminal and form a single conductive thermal pad. This pad must be routed to the drain net and cannot serve as a floating thermal slug or ground plane.
DMTH8012LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta), 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1949 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.6W (Ta), 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMTH8012LPS-13 FAQ
1.How can I place an order for DMTH8012LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH8012LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH8012LPS-13 reliable?
The price and inventory of DMTH8012LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8012LPS-13 is usually 5 days.
3.What payment methods are accepted for DMTH8012LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8012LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH8012LPS-13?
DMTH8012LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH8012LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH8012LPS-13?
For technical support, including DMTH8012LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8012LPS-13 requirements.
6.How does Aetrix verify that DMTH8012LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMTH8012LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8012LPS-13 meets industry standards.
7.What is the process for return or replacement of DMTH8012LPS-13?
All DMTH8012LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8012LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH8012LPS-13 part is unused and in its original packaging.
Return procedure for DMTH8012LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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