Diodes Incorporated DMTH8012LPSW-13

Overview

DMTH8012LPSW-13 from Diodes Incorporated is an 80V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI5060-8 package, delivering 14–17 mΩ R_DS(ON) @ V_GS = 10V and 53.7A continuous drain current at T_C = +25°C. It serves as a high-efficiency power switch in synchronous rectification and DC-DC converter output stages where low conduction loss and robust thermal performance are critical.

For engineers reviewing the DMTH8012LPSW-13 datasheet, DMTH8012LPSW-13 pinout, DMTH8012LPSW-13 application, or DMTH8012LPSW-13 equivalent, this device supports high-temperature automotive and industrial power management designs requiring 100% unclamped inductive switching capability, low gate charge (34 nC @ 10V), and JEDEC-qualified reliability up to +175°C junction temperature.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low R_DS(ON) and fast switching: input capacitance (C_iss) is 1949 pF at V_DS = 40V, with reverse transfer capacitance (C_rss) held to just 10 pF-enabling stable high-frequency operation in buck converters and active clamp circuits.

Its thermal design centers on a thermally enhanced PowerDI5060-8 package with exposed drain pad, achieving R_θJC = 1.8°C/W and supporting 83.3W power dissipation at T_C = +25°C-critical for compact, high-power-density board layouts where heatsinking is constrained.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 (SWP), surface-mount, thermally enhanced plastic package with exposed drain pad and matte tin-plated sidewalls for optical solder inspection. Dimensions: 5.15 × 6.40 mm footprint, 1.00 mm height, 0.097 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMTH8012LPSW-13, the -13 variant offers identical performance in a mechanically distinct SWP (Type Q) configuration ideal for legacy layouts, while the Q-suffix part adds automotive compliance overhead without electrical improvement-making the base part optimal for industrial and commercial power designs prioritizing cost and thermal efficiency.

Availability

DMTH8012LPSW-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and LED backlight power supplies requiring stable component supply, JEDEC-reliable operation up to +175°C, and RoHS 3-compliant green packaging.

Supply support for DMTH8012LPSW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions, with design and manufacturing facilities certified to IATF 16949 and ISO 9001 standards.

This MOSFET belongs to Diodes' PowerDI® high-current logic-level portfolio, engineered specifically for high-efficiency, high-temperature power conversion in automotive and industrial systems where thermal resilience and low R_DS(ON) are primary selection criteria.

FAQ

What is the maximum continuous drain current at T_C = +100°C?

The DMTH8012LPSW-13 supports 38 A continuous drain current at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on R_θJC = 1.8°C/W and maximum T_J = +175°C, enabling sustained high-current operation in thermally demanding environments without forced cooling.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation, especially in high-speed switching applications. The datasheet specifies t_D(ON) = 4.9 ns and t_F = 3.5 ns with R_g = 1.6 Ω; using 5–10 Ω provides optimal trade-off between switching speed and EMI suppression while keeping peak gate current within driver limits.

Is the PowerDI5060-8 package lead-free and RoHS compliant?

Yes-the DMTH8012LPSW-13 uses matte tin annealed over copper leadframe and conforms to EU Directive 2015/863/EU (RoHS 3), with bromine and chlorine each <900 ppm and antimony <1000 ppm. It is also halogen- and antimony-free per Diodes' "Green" definition and rated UL 94V-0 for flammability.

Can this MOSFET replace a Schottky diode in synchronous rectification?

Yes-it is explicitly designed for synchronous rectification, with low V_GS(th) (1–3 V), fast body diode recovery (t_RR = 30.2 ns), and low R_DS(ON) that yields lower forward conduction loss than typical 60V Schottky diodes above ~2A load current, especially at elevated temperatures where Schottky leakage increases significantly.