Diodes Incorporated DMTH8028LPSW-13
- Part No.:
- DMTH8028LPSW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMTH8028LPSW-13.pdf
- Description:
- MOSFET BVDSS: 61V~100V POWERDI50
- Quantity:
- Payment:

- Shipping:

Inventory:2,632
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Product details
Overview
DMTH8028LPSW from Diodes Incorporated is an 80V, 175°C-rated N-channel enhancement-mode MOSFET in PowerDI5060-8 (SWP) package, with RDS(ON) = 25 mΩ @ VGS = 10 V and 41.7 A continuous drain current at TC = +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and synchronous rectification in automotive and industrial power supplies.
For engineers reviewing the DMTH8028LPSW datasheet, DMTH8028LPSW pinout, DMTH8028LPSW application, or DMTH8028LPSW equivalent, this page provides verified electrical parameters, thermal performance data, wettable flank package details, and validated alternatives for power stage design and BOM optimization.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) and reduced gate charge (Qg = 10.4 nC @ VGS = 10 V), enabling high-frequency operation in buck and boost topologies. Its 100% production-tested UIS capability ensures robustness under inductive load switching stress.
The device features a thermally enhanced exposed-drain PowerDI5060-8 (SWP) package with RθJC = 2.3°C/W, supporting high-power density layouts. Body diode reverse recovery time (tRR = 25.5 ns) and low QRR (20.6 nC) reduce switching losses during freewheeling in synchronous rectifier configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Supports input rails up to 64 V DC with 20% safety margin in automotive and industrial SMPS. |
| RDS(ON) | 25 mΩ @ VGS = 10 V - Enables ≤1.05 W conduction loss at 41.7 A, critical for thermal management in compact converters. |
| ID (continuous) | 41.7 A @ TC = +25°C - Sustains high output current in 12–48 V input DC-DC stages without forced airflow. |
| Qg | 10.4 nC @ VGS = 10 V - Reduces gate drive power and enables efficient operation at ≥500 kHz switching frequencies. |
| tRR | 25.5 ns - Minimizes body diode conduction loss and voltage overshoot during hard-switched synchronous rectification. |
| TJ max | +175°C - Qualified for under-hood automotive environments and high-ambient industrial control systems. |
| Ciss | 641 pF - Low input capacitance improves gate drive efficiency and reduces Miller-induced turn-on risk. |
Pinout & Package
PowerDI5060-8 (SWP) is a surface-mount, thermally enhanced package with an exposed drain pad on the bottom side and wettable flanks for automated optical inspection. The 8-pin configuration integrates four parallel drain terminals and two source terminals per side to minimize package inductance and resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | Drain connection (common node) | Four parallel pins tied to internal die drain metallization and external thermal pad - primary heat path and high-current return path. |
| 5, 6 (Source) | Source connection | Two dedicated source pins reduce source inductance and improve gate drive stability in high-dI/dt applications. |
| 7, 8 (Gate) | Gate control input | Two gate pins provide low-inductance gate loop and enable Kelvin-connected gate drive for precise threshold control. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness up to IAS = 12.5 A and EAS = 23.4 mJ - eliminates need for external snubbers in flyback or LLC resonant converters. |
| Wettable flank leads | Enables AOI-compatible solder joint verification on bottom-side terminations - critical for automotive PPAP compliance and zero-defect manufacturing. |
| Low RDS(ON) × Qg figure-of-merit | 260 Ω·nC - balances conduction and switching losses for optimal efficiency across 200–1000 kHz operating range. |
| Halogen- and antimony-free "Green" construction | Meets JESD201A Class 2 reliability standards and EU RoHS 3 (2015/863/EU) - supports sustainability requirements in Tier-1 automotive supply chains. |
| Thermal resistance RθJC | 2.3°C/W - allows direct mounting to heatsinks or copper planes, enabling >40 W dissipation with minimal temperature rise at TC = 100°C. |
Applications
| Automotive DC-DC Converters | Synchronous Rectification |
|---|---|
Use Scenario: 12 V to 5 V/3.3 V step-down conversion in ADAS ECUs and infotainment head units. IC Role / Device Role / Timing Role: High-side switch in buck converter power stage, operating at 500 kHz with 40 A peak load. Use Value: 25 mΩ RDS(ON) limits conduction loss to <1.0 W at full load, reducing thermal derating and enabling smaller heatsinks. | Use Scenario: Secondary-side rectification in isolated 48 V to 12 V telecom and server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes in forward or LLC topology. Use Value: 25.5 ns tRR and 20.6 nC QRR cut body diode loss by >65% versus standard MOSFETs, improving system efficiency by 1.2% at full load. |
| Industrial Motor Drive Gate Drivers | LED Backlighting Power Stages |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver modules. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by bootstrap gate driver with 10 V gate bias. Use Value: 10.4 nC Qg enables clean 20 ns rise/fall times, minimizing shoot-through risk and EMI generation. | Use Scenario: Constant-current LED driver for automotive exterior lighting (headlamps, DRLs). IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating current through 10–20 series-connected LEDs. Use Value: +175°C TJ rating ensures reliable operation in sealed headlamp enclosures where ambient exceeds 125°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH8028LPS-13 | Same die, identical RDS(ON), Qg, and thermal specs; differs only in tape-and-reel packaging (Type U vs UX) and marking code. | No functional difference; suitable for same PCB layout and thermal design. | Select when sourcing flexibility or legacy BOM alignment is required. |
| IPB027N08N5ATMA1 | Higher VDSS (80 V), lower RDS(ON) (2.7 mΩ), but larger TO-263-7 package and higher Qg (69 nC); requires different layout and gate drive strength. | Better conduction loss at low current, but slower switching and less suited for space-constrained automotive modules. | Prefer for high-current, low-frequency (<200 kHz) industrial inverters where thermal mass dominates. |
Compared with DMTH8028LPSW, DMTH8028LPS-13 offers identical electrical and thermal performance with minor packaging variance, while IPB027N08N5ATMA1 trades faster switching for significantly lower RDS(ON) at the cost of gate drive complexity and board area.
Availability
DMTH8028LPSW is available at Aetrix Electronics and suitable for automotive DC-DC converters, synchronous rectification circuits, and industrial LED backlighting systems requiring stable component supply, AEC-Q101-aligned quality, and long-term lifecycle support.
Supply support for DMTH8028LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal resilience and switching speed are critical.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DMTH8028LPSW is rated for continuous operation up to +175°C junction temperature, validated per AEC-Q101 stress testing. This rating applies under specified thermal conditions - including proper PCB copper area, solder void control, and ambient airflow - and must be verified using the transient thermal impedance curve (Figure 13) for pulsed or intermittent loads.
Does this MOSFET require a gate resistor for safe operation?
A gate resistor is recommended to dampen ringing and limit peak gate current during switching. With Qg = 10.4 nC and typical gate drive voltages of 10–12 V, a 5–10 Ω resistor balances switching speed and EMI suppression. The exact value depends on driver capability and layout parasitics - refer to Figures 11 and 12 for gate charge behavior and SOA limits.
Is the PowerDI5060-8 (SWP) package compatible with standard reflow profiles?
Yes - the PowerDI5060-8 (SWP) package is qualified for lead-free reflow per JEDEC J-STD-020, with Moisture Sensitivity Level 1. Recommended peak temperature is 260°C for ≤30 seconds, with ramp rates conforming to IPC/JEDEC J-STD-020D. Wettable flanks support post-reflow AOI without requiring X-ray inspection.
Can DMTH8028LPSW replace a standard TO-252 MOSFET in existing designs?
Direct replacement is possible only with PCB layout revision: PowerDI5060-8 has different pad dimensions, thermal pad geometry, and pin count (8 vs 3). While electrical specs align closely with many TO-252 devices, the enhanced thermal performance and wettable flanks necessitate updated stencil design, reflow profile validation, and AOI program updates for production transfer.
DMTH8028LPSW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 41.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 641 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.9W (Ta), 65W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI5060-8 (Type UX)
DMTH8028LPSW-13 FAQ
1.How can I place an order for DMTH8028LPSW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMTH8028LPSW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMTH8028LPSW-13 reliable?
The price and inventory of DMTH8028LPSW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8028LPSW-13 is usually 5 days.
3.What payment methods are accepted for DMTH8028LPSW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8028LPSW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMTH8028LPSW-13?
DMTH8028LPSW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMTH8028LPSW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMTH8028LPSW-13?
For technical support, including DMTH8028LPSW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8028LPSW-13 requirements.
6.How does Aetrix verify that DMTH8028LPSW-13 is sourced from the original manufacturer or authorized distributors?
All DMTH8028LPSW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8028LPSW-13 meets industry standards.
7.What is the process for return or replacement of DMTH8028LPSW-13?
All DMTH8028LPSW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8028LPSW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMTH8028LPSW-13 part is unused and in its original packaging.
Return procedure for DMTH8028LPSW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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