Diodes Incorporated DMTH8030LPDW-13

Overview

DMTH8030LPDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 80V V_DSS, 26mΩ R_DS(ON) @ 10V V_GS, and 28.5A continuous drain current at T_C = +25°C. It operates up to +175°C junction temperature and features wettable flanks for automated optical inspection - deployed in high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the DMTH8030LPDW-13 datasheet, DMTH8030LPDW-13 pinout, DMTH8030LPDW-13 application, or DMTH8030LPDW-13 equivalent, key selection criteria include its dual-channel layout, 45mΩ R_DS(ON) @ 4.5V V_GS, 100% production-tested UIS robustness, and PowerDI5060-8 thermal performance (R_θJC = 3.7°C/W).

Technical Context

This dual N-channel MOSFET integrates two independent silicon die in a single exposed-drain PowerDI5060-8 package, enabling synchronous rectification or half-bridge topologies without inter-device timing skew. Its gate threshold voltage (1.3–2.5V) supports 3.3V and 5V logic-level drive, while low C_iss (631pF) and fast switching (t_R = 9.7ns) reduce switching losses in high-frequency power stages.

The device's 175°C rating and 23.4mJ E_AS support operation in automotive under-hood and industrial motor control environments where thermal margin and unclamped inductive energy handling are critical. Its wettable flank geometry ensures reliable solder-joint inspection on automated AOI systems.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UXD), thermally enhanced surface-mount package with exposed drain pads and wettable flank sidewalls for optical solder inspection. Dimensions: 5.15 × 6.40 mm footprint, 1.10 mm height, 0.097 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMTH8030LPDW-13, the DMTH8030LPDQ-13 adds automotive qualification without altering electrical behavior, while the DMN3029LSD-13 sacrifices voltage rating, thermal capability, and UIS robustness - making it unsuitable for shared application spaces like motor control or 48V telecom.

Availability

DMTH8030LPDW-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial BLDC motor drivers, server PSU ORing circuits, and telecom DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for DMTH8030LPDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Malaysia, and Taiwan.

This part belongs to Diodes' Power MOSFET product line, engineered for high-efficiency power conversion in automotive, industrial, and computing applications where thermal resilience and switching reliability are critical.

FAQ

What is the maximum continuous drain current for DMTH8030LPDW-13 at 100°C case temperature?

The datasheet specifies I_D = 20A at T_C = +100°C with V_GS = 10V. This derating reflects thermal limits of the PowerDI5060-8 package and silicon die; operation above this current requires forced cooling or reduced duty cycle to maintain T_J ≤ 175°C.

Does DMTH8030LPDW-13 support logic-level gate drive from a 3.3V microcontroller?

Yes - its gate threshold voltage ranges from 1.3V to 2.5V, and R_DS(ON) is guaranteed at 45mΩ with V_GS = 4.5V. At 3.3V, the device conducts but with higher on-resistance; full enhancement requires ≥4.5V, so a level-shifter or gate driver is recommended for optimal efficiency.

How is the thermal pad on the PowerDI5060-8 package connected internally?

The exposed bottom pad is electrically connected to both drain terminals (D1 and D2) and serves as the primary thermal path. Layout must connect this pad to a large copper area (≥1 inch², 2oz) for effective heat dissipation; no isolation is possible between D1/D2 and the pad.

Is DMTH8030LPDW-13 pin-compatible with any other Diodes dual-MOSFETs in PowerDI5060-8?

No - pinout is unique to this part. While the PowerDI5060-8 footprint is standardized, the internal channel mapping (S1/D1/G1/S2/D2/G2) differs across Diodes' dual-MOSFET portfolio; layout reuse requires verification against each specific datasheet's top-view diagram.