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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMTH8030LPDWQ-13

Name: DMTH8030LPDWQ-13
Brand: Diodes Incorporated
SKU: DMTH8030LPDWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH8030LPDWQ-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 8-PowerTDFN

Datasheet:: DMTH8030LPDWQ-13.pdf

Description:: MOSFET 2N-CH 80V 28.5A PWRDI50

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Product details

Overview

DMTH8030LPDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 80V V_DSS, 26 mΩ R_DS(ON) @ 10V V_GS, and 28.5A I_D at T_C = +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for high-reliability automotive DC-DC converters and motor control circuits operating up to +175°C junction temperature.

For engineers reviewing the DMTH8030LPDWQ-13 datasheet, DMTH8030LPDWQ-13 pinout, DMTH8030LPDWQ-13 application, or DMTH8030LPDWQ-13 equivalent, key selection criteria include its dual-channel layout with wettable flank terminals, 100% production-tested UIS robustness, low gate charge (10.4 nC @ 10V), and thermal resistance of 3.7 °C/W (junction-to-case) for high-power-density board designs.

Technical Context

This device integrates two independent N-channel MOSFETs in a single PowerDI5060-8/SWP (Type UXD) package with exposed drain pads for enhanced thermal performance. Its gate threshold voltage (1.3–2.5 V) enables compatibility with 3.3V and 5V logic-level drive, while low input capacitance (631 pF) and fast switching (t_D(ON) = 7.1 ns, t_F = 8.6 ns) support high-frequency operation in synchronous buck converters.

The dual configuration supports half-bridge or dual-switch topologies without inter-device matching constraints. Each channel features identical electrical specs: 80V breakdown, 26 mΩ R_DS(ON) @ 10V, and 12.5A avalanche current capability with 23.4 mJ E_AS, enabling rugged operation under inductive load transients common in automotive motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Withstands up to 80V drain-source voltage before breakdown, suitable for 48V automotive bus systems.
R_DS(ON)	26 mΩ @ V_GS = 10V - Enables <1.5W conduction loss at 20A per channel, critical for thermally constrained modules.
I_D (max)	28.5 A @ T_C = +25°C - Supports high-current output stages in compact DC-DC converters without external heatsinking.
T_J max	+175°C - Certified for under-hood automotive environments where ambient temperatures exceed 125°C.
Q_g	10.4 nC @ V_GS = 10V - Reduces gate driver power demand and switching losses in 200–500 kHz SMPS designs.
R_θJC	3.7 °C/W - Allows direct thermal coupling to PCB copper planes or heatsinks, enabling >40W power dissipation at T_C = +25°C.
E_AS	23.4 mJ - Confirmed energy handling during unclamped inductive switching, essential for motor phase-leg reliability.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced with exposed drain pads on both sides and wettable flank terminals for automated optical solder inspection.

Pin/Terminal	Circuit Role	Design Meaning
S1	Source of Channel 1	Low-side return path for first MOSFET; electrically isolated from S2 but shares thermal pad.
D1	Drain of Channel 1	Exposed copper pad - primary thermal path and high-current output node; connected internally to D2 via package substrate.
G1	Gate of Channel 1	Control input for first channel; requires <2.5V threshold drive and benefits from low C_iss (631 pF).
S2	Source of Channel 2	Independent source terminal for second MOSFET; enables dual low-side or half-bridge configurations.
D2	Drain of Channel 2	Second exposed copper pad - symmetrical thermal and current path to D1; not internally connected to D1.
G2	Gate of Channel 2	Independent gate input; matched timing characteristics (t_D(OFF) = 18.6 ns) ensure balanced channel switching.

Key Features

Feature	Design Value
AEC-Q101 qualification & PPAP support	Validated for automotive production use with full change control, IATF 16949 manufacturing, and zero-defect screening.
100% production UIS testing	Each unit passes unclamped inductive switching stress test (L = 0.3 mH, I_AS = 12.5 A), ensuring field reliability in motor commutation.
Wettable flank terminals	Matte tin-plated sidewalls enable automated optical inspection (AOI) of solder fillets, improving SMT process yield and traceability.
+175°C maximum junction temperature	Enables operation in engine bay, transmission control, or ADAS ECUs where ambient exceeds 125°C without derating.
Green, halogen-free construction	Meets RoHS 3 (2015/863/EU) and Diodes' "Green" standard (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb).

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Drivers

Use Scenario: High-efficiency 48V-to-12V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Dual N-channel switch implementing synchronous rectification and high-side switching in interleaved topology.

Use Value: 26 mΩ R_DS(ON) minimizes conduction loss at 25A continuous, while 175°C rating ensures stable operation near engine heat sources.

Use Scenario: Three-phase inverter stage driving brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Half-bridge leg pair (high-side + low-side) per phase, leveraging matched dynamic parameters for precise PWM timing.

Use Value: Low Q_gd/Q_gs ratio (2.4/1.8 nC) reduces shoot-through risk; 100% UIS testing prevents failure during motor stall events.

On-Board Charger (OBC) Auxiliary Supplies

Brake-by-Wire Control Modules

Use Scenario: Isolated auxiliary power supply generating 5V/3.3V rails for OBC microcontrollers and gate drivers.

IC Role / Device Role / Timing Role: Primary-side active clamp switch in resonant LLC topology, requiring fast turn-off and low Crss.

Use Value: Crss = 19.5 pF limits Miller-induced false turn-on; t_F = 8.6 ns enables clean switching at >300 kHz.

Use Scenario: Redundant dual-channel H-bridge controlling electro-hydraulic brake actuators.

IC Role / Device Role / Timing Role: Independent channel control for fail-operational redundancy, with separate gate drive and current sensing per FET.

Use Value: Dual die isolation prevents single-point failure; AEC-Q101 qualification ensures ASIL-B compliance readiness.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH8006LSDQ-13	60V V_DSS, 3.8 mΩ R_DS(ON) @ 10V, same PowerDI5060-8 package	Better suited for 24V/48V low-voltage motor drives where lower R_DS(ON) outweighs voltage margin	Select when system bus voltage ≤60V and thermal budget demands sub-5 mΩ conduction loss.
IPB80N04S4-02	40V V_DSS, 2.0 mΩ R_DS(ON) @ 10V, TO-263-7 package	Larger footprint, higher thermal mass, no wettable flanks; requires manual AOI or X-ray verification	Choose only if legacy TO-263 layout exists and 80V rating is unnecessary; avoid for new AEC-Q101 designs needing optical inspection.

Compared with DMTH8006LSDQ-13 and IPB80N04S4-02, the DMTH8030LPDWQ-13 uniquely balances 80V robustness, AEC-Q101 compliance, wettable flank inspection, and dual-channel integration in a thermally optimized 5mm × 6mm footprint-making it optimal for next-generation 48V automotive power stages where voltage margin, reliability, and automated assembly coexist.

Availability

DMTH8030LPDWQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, on-board chargers, and brake-by-wire control modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMTH8030LPDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.

This part belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant high-temperature power conversion and motor control applications demanding robust UIS performance and automated optical inspection capability.

FAQ

What is the maximum continuous drain current per channel at T_C = +100°C?

The DMTH8030LPDWQ-13 supports 20A continuous drain current per channel at case temperature +100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerDI5060-8 package and ensures safe operation within its 175°C junction limit under sustained load conditions.

Does this MOSFET require negative gate drive for reliable turn-off in high-dV/dt environments?

No. The device has a gate threshold voltage range of 1.3–2.5V and exhibits no significant Miller plateau instability. With typical C_iss = 631 pF and C_rss = 19.5 pF, a standard 0V/10V gate drive suffices; negative bias is unnecessary unless system-level noise immunity requirements exceed ±10V dV/dt.

Can both channels be paralleled to increase current capacity?

No. The two channels are electrically isolated but share thermal coupling through the common package substrate. Paralleling would cause unequal current sharing due to parametric mismatch and thermal runaway risk. Use each channel independently in dual-switch or half-bridge configurations per datasheet guidance.

Is the PowerDI5060-8/SWP package compatible with standard reflow profiles for lead-free soldering?

Yes. The device is rated for Moisture Sensitivity Level 1 per J-STD-020 and uses matte tin annealed terminals compliant with MIL-STD-202, Method 208. It supports industry-standard lead-free reflow profiles (peak 260°C, 60 sec max) without preconditioning, provided board layout follows Diodes' recommended pad dimensions and thermal relief guidelines.

DMTH8030LPDWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 80V

Current - Continuous Drain (Id) @ 25°C:: 28.5A (Tc)

Rds On (Max) @ Id, Vgs:: 26mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 631pF @ 40V

Power - Max:: 3.1W (Ta), 41W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI5060-8 (Type UXD)

DMTH8030LPDWQ-13 FAQ

1.How can I place an order for DMTH8030LPDWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH8030LPDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH8030LPDWQ-13 reliable?

The price and inventory of DMTH8030LPDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH8030LPDWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH8030LPDWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH8030LPDWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH8030LPDWQ-13?

DMTH8030LPDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH8030LPDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH8030LPDWQ-13?

For technical support, including DMTH8030LPDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH8030LPDWQ-13 requirements.

6.How does Aetrix verify that DMTH8030LPDWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH8030LPDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH8030LPDWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH8030LPDWQ-13?

All DMTH8030LPDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH8030LPDWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH8030LPDWQ-13 part is unused and in its original packaging.

Return procedure for DMTH8030LPDWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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