Diodes Incorporated DMTH83M2SPSW-13

Overview

DMTH83M2SPSW from Diodes Incorporated is an 80V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, rated for 165A continuous drain current at TC = +25°C, with R_DS(ON) of 2.9 mΩ at V_GS = 10V and 5.3 mΩ at V_GS = 6V, operating up to +175°C junction temperature. It serves as a high-current load switch or power-stage transistor in automotive body control and engine-management systems.

For engineers reviewing the DMTH83M2SPSW datasheet, DMTH83M2SPSW pinout, DMTH83M2SPSW application, or DMTH83M2SPSW equivalent, this page delivers verified electrical parameters, thermal performance data, validated terminal mapping, and real-world switching behavior - critical for high-reliability 12V/24V automotive power distribution and DC-DC converter design.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss while maintaining fast switching speed (t_D(ON) = 15 ns, t_F = 43 ns) and robust unclamped inductive switching (UIS) capability (E_AS = 1227 mJ). Its gate threshold voltage (V_GS(TH) = 2–4 V) ensures stable turn-on across -55°C to +175°C.

The device integrates a low-V_SD body diode (0.8–1.2 V at I_S = 20A) with t_RR = 72 ns and Q_RR = 157 nC, supporting synchronous rectification and bidirectional current handling in high-efficiency buck converters and reverse-polarity protection circuits.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded plastic housing rated UL 94V-0; matte tin annealed terminals solderable per MIL-STD-202, Method 208.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-current power MOSFET applications.

Compared with IXTN160N10L2 and DMTH8006LPSW-13, DMTH83M2SPSW uniquely balances 80V rating, sub-3mΩ on-resistance, and ultra-low R_θJC in a compact surface-mount package - making it optimal for space-constrained, thermally demanding automotive power stages where both voltage headroom and thermal efficiency are critical.

Availability

DMTH83M2SPSW is available at Aetrix Electronics and suitable for engine management systems, body control modules, and DC-DC converters requiring stable component supply, AEC-Q101 compliance, and high-temperature operational integrity.

Supply support for DMTH83M2SPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' PowerDI® high-current automotive MOSFET family, engineered specifically for robust load switching and power conversion in harsh-temperature vehicle subsystems.

FAQ

What is the maximum safe operating temperature for DMTH83M2SPSW?

The device is rated for junction temperatures from –55°C to +175°C. Its thermal resistance R_θJC = 1.0 °C/W enables sustained operation at full 165A current only when case temperature is maintained ≤+25°C - typically requiring aggressive PCB copper area or external heatsinking. Derating curves in Figure 12 define safe operating area limits for pulsed and DC conditions.

Does DMTH83M2SPSW require a gate resistor for driving?

Yes - a series gate resistor (typically 2–10 Ω) is required to dampen ringing caused by gate loop inductance and control dV/dt during switching. With Q_g = 87 nC and R_g = 1.2 Ω intrinsic resistance, a 5 Ω external resistor yields ~50 ns rise time, balancing EMI suppression and switching loss in 100–500 kHz applications.

Can DMTH83M2SPSW be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(ON) (Figure 6) ensures inherent current sharing across paralleled devices. Layout symmetry, matched gate drive paths, and shared source routing are essential; the seven-source-terminal configuration reduces source inductance imbalance and improves dynamic sharing accuracy above 1 MHz.

Is there a qualified automotive version of this part?

Yes - the DMTH83M2SPSWQ is the AEC-Q101 qualified variant, sharing identical electrical and thermal specifications but subjected to additional stress testing including HTOL, UHAST, and temperature cycling per automotive qualification standards. It carries the same PowerDI5060-8/SWP package and pinout.