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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMTH83M2SPSWQ-13

Name: DMTH83M2SPSWQ-13
Brand: Diodes Incorporated
SKU: DMTH83M2SPSWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMTH83M2SPSWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: DMTH83M2SPSWQ-13.pdf

Description:: MOSFET BVDSS: 61V~100V POWERDI50

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Product details

Overview

DMTH83M2SPSWQ-13 from Diodes Incorporated is an AEC-Q101-qualified 80V N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, delivering 2.9 mΩ R_DS(ON) at V_GS = 10 V, 165 A continuous drain current at T_C = +25°C, and operation up to +175°C junction temperature - engineered for high-reliability automotive power switching in engine control units and DC-DC converters.

For engineers reviewing the DMTH83M2SPSWQ-13 datasheet, DMTH83M2SPSWQ-13 pinout, DMTH83M2SPSWQ-13 application, or DMTH83M2SPSWQ-13 equivalent, key selection criteria include its low R_DS(ON) at 6 V gate drive (5.3 mΩ), 100% production-tested UIS robustness, and IATF16949-manufactured traceability for PPAP-compliant automotive designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-current automotive power stages. Its 1 Ω·cm² figure-of-merit (R_DS(ON) × Q_g = 2.9 mΩ × 87 nC ≈ 252 mΩ·nC) balances efficiency and drive strength for synchronous rectification and motor control.

The device integrates a robust body diode with 72 ns reverse recovery time and 157 nC Q_RR, enabling reliable freewheeling in hard-switched topologies. Thermal design is supported by 1 °C/W R_θJC to the exposed drain pad and AEC-Q101 qualification across -55°C to +175°C operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Withstands peak transient voltages in 48 V automotive systems without avalanche breakdown.
R_DS(ON)	2.9 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 133 A, critical for high-efficiency DC-DC converter primary switches.
I_D (T_C = +25°C)	165 A - Supports high-current load switching in battery disconnect and starter solenoid driver circuits.
Q_g	87 nC - Determines gate drive power requirement; compatible with standard automotive gate drivers (e.g., UCC27531).
R_θJC	1 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad, simplifying thermal management in space-constrained modules.
E_AS	1227 mJ - Confirmed unclamped inductive switching energy rating ensures survivability during load dump or inductive kick events.
T_J max	+175°C - Meets under-hood temperature requirements for engine bay-mounted power electronics per AEC-Q101.

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain (parallel-connected)	All eight pins are internally connected to the drain terminal and exposed copper pad - provides low-inductance, high-current path and primary thermal interface.
Gate	Control Input	Single gate terminal (pin 1 marked with notch); requires ≤±20 V drive; 1.2 Ω gate resistance minimizes ringing in high-dV/dt environments.
Source	Reference Node	Two source terminals (pins 2 & 3 adjacent to gate); establishes low-impedance return path for gate drive and sense signals.

Key Features

Feature	Design Value
100% UIS tested in production	Guarantees minimum 28.6 A avalanche current and 1227 mJ single-pulse energy handling without derating.
Low R_DS(ON) @ 6 V	5.3 mΩ enables robust operation with standard 5 V/6 V microcontroller GPIO or automotive logic-level drivers.
High thermal reliability	1 °C/W R_θJC and +175°C T_J rating support sustained operation in engine control modules without active cooling.
AEC-Q101 qualified + PPAP capable	Manufactured in IATF16949-certified facilities with full change control documentation for Tier-1 automotive supply chain compliance.
Green, RoHS 3 compliant	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) meets EU ELV and OEM sustainability mandates.

Applications

Engine Control Unit (ECU) High-Side Switch

Automotive DC-DC Converter Primary Switch

Use Scenario: High-side power distribution for fuel injector drivers and ignition coil pre-drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Main power switch controlling 12–48 V loads with precise PWM timing and fast turn-off to prevent cross-conduction.

Use Value: 2.9 mΩ R_DS(ON) reduces heat generation in confined ECU enclosures; 175°C rating ensures stability during prolonged idle-stop operation.

Use Scenario: Primary-side synchronous rectifier in 48 V-to-12 V bidirectional DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-current, high-frequency switching element operating at 100–300 kHz with tight dead-time control.

Use Value: Low Q_g (87 nC) and fast switching (t_r = 50 ns) minimize switching losses; robust body diode supports ZVS transitions.

Body Control Module (BCM) Load Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Driving high-power lighting (headlamps, fog lamps) and HVAC blowers in centralized BCMs.

IC Role / Device Role / Timing Role: Low-side or high-side load switch with integrated diagnostics and short-circuit protection coordination.

Use Value: 165 A I_D supports multi-kW loads; 100% UIS testing prevents failure during lamp cold-start inrush events.

Use Scenario: Phase-leg switching in three-phase brushless DC motors for EPS assist torque delivery.

IC Role / Device Role / Timing Role: Half-bridge power stage component requiring matched R_DS(ON), low C_iss (5466 pF), and fast t_f (43 ns) for precise PWM control.

Use Value: Symmetrical dual-source layout minimizes parasitic inductance; 72 ns t_RR enables clean commutation without voltage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF8AG	60 V V_DSS, 1.8 mΩ R_DS(ON) @ 10 V, same PowerFLAT 5x6 package but lower voltage rating.	Limited to 24 V/48 V systems only; unsuitable for 80 V transients in 48 V architectures with load dump.	Select when system max V_DS stays below 60 V and ultra-low R_DS(ON) is prioritized over transient margin.
IXFH80N60X3	600 V V_DSS, TO-247 package, 12.5 mΩ R_DS(ON), higher R_θJA (0.45 °C/W case but >40 °C/W ambient).	Designed for industrial SMPS, not AEC-Q101 qualified; lacks PPAP support and automotive thermal cycling validation.	Use only in non-automotive, high-voltage AC-DC or motor drives where qualification and compact footprint are secondary.

Compared with STL220N6LF8AG and IXFH80N60X3, DMTH83M2SPSWQ-13 uniquely combines 80 V rating, AEC-Q101 qualification, PowerDI5060-8 thermal performance, and production UIS testing - making it the only drop-in solution for PPAP-critical 48 V automotive power stages requiring both voltage headroom and thermal resilience.

Availability

DMTH83M2SPSWQ-13 is available at Aetrix Electronics and suitable for engine control units, body control modules, and 48 V DC-DC converters requiring stable component supply with full automotive traceability and long-term lifecycle assurance.

Supply support for DMTH83M2SPSWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and automotive-grade components.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, designed specifically for AEC-Q101-compliant high-current switching in engine, chassis, and electrification systems - emphasizing thermal robustness, transient immunity, and PPAP-ready manufacturing.

FAQ

What is the maximum allowable gate-source voltage for DMTH83M2SPSWQ-13?

The absolute maximum V_GS is ±20 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +12 V to +15 V for turn-on and –5 V to 0 V for turn-off to ensure fast, low-loss switching while maintaining margin against transients.

Does DMTH83M2SPSWQ-13 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and suppress oscillation. Based on measured R_g = 1.2 Ω and typical gate charge of 87 nC, a 3 Ω series resistor is recommended for 100–300 kHz switching in automotive DC-DC converters, balancing switching speed and EMI suppression per test conditions in Figure 11.

How is thermal performance validated for this MOSFET in real PCB layouts?

Thermal resistance R_θJC = 1 °C/W is measured from junction to the soldered drain pad surface, verified using JEDEC JESD51-14 standards on 2 oz copper FR-4 with 1-inch² thermal pad. Layout must replicate the specified 4.7 mm × 3.76 mm D1 × D2 pad dimensions and avoid solder mask over the drain pad to achieve rated performance.

Is DMTH83M2SPSWQ-13 suitable for synchronous rectification in isolated flyback converters?

No - its 80 V V_DSS and body diode characteristics (V_SD = 0.8–1.2 V, t_RR = 72 ns) are optimized for high-current, medium-voltage automotive primary-side switching, not secondary-side low-V_DS rectification. For flyback sync rectification, devices with <30 V rating and <0.5 V V_SD are preferred.

DMTH83M2SPSWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 165A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5466 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 4.1W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI5060-8 (Type UX)

DMTH83M2SPSWQ-13 FAQ

1.How can I place an order for DMTH83M2SPSWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMTH83M2SPSWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMTH83M2SPSWQ-13 reliable?

The price and inventory of DMTH83M2SPSWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMTH83M2SPSWQ-13 is usually 5 days.

3.What payment methods are accepted for DMTH83M2SPSWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMTH83M2SPSWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMTH83M2SPSWQ-13?

DMTH83M2SPSWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMTH83M2SPSWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMTH83M2SPSWQ-13?

For technical support, including DMTH83M2SPSWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMTH83M2SPSWQ-13 requirements.

6.How does Aetrix verify that DMTH83M2SPSWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMTH83M2SPSWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMTH83M2SPSWQ-13 meets industry standards.

7.What is the process for return or replacement of DMTH83M2SPSWQ-13?

All DMTH83M2SPSWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMTH83M2SPSWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMTH83M2SPSWQ-13 part is unused and in its original packaging.

Return procedure for DMTH83M2SPSWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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