Diodes Incorporated DMTH84M1SPSQ-13

Overview

DMTH84M1SPSQ-13 from Diodes Incorporated is an AEC-Q101-qualified 80V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for continuous 100A drain current at TC = +25°C, 4mΩ R_DS(ON) @ V_GS = 10V, and operation up to +175°C junction temperature-designed for high-reliability automotive DC-DC converters and load switches.

For engineers reviewing the DMTH84M1SPSQ-13 datasheet, DMTH84M1SPSQ-13 pinout, DMTH84M1SPSQ-13 application, or DMTH84M1SPSQ-13 equivalent, key selection criteria include its 1.1°C/W R_θJC, 100% production-tested UIS robustness, low gate charge (63nC @ V_GS = 10V), and PPAP-capable automotive qualification under IATF 16949.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in high-temperature automotive power stages. Its 8-pin PowerDI5060-8 package features an exposed drain pad for thermal performance and dual-source/drain paralleling to support 100A steady-state current.

The device delivers 264.5mJ single-pulse avalanche energy (L = 1mH) and exhibits stable R_DS(ON) over -55°C to +175°C, with normalized on-resistance variation ≤2.4× across temperature. Gate threshold voltage remains tightly controlled (2–4V) and shows minimal drift with junction temperature.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - 8-pin molded plastic package with exposed drain pad (D), matte tin-annealed copper leadframe, UL 94V-0 rating, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with STL220N6F7AG and IPB037N10N5LF, DMTH84M1SPSQ-13 uniquely combines 80V rating, AEC-Q101 qualification, 100% UIS screening, and PowerDI5060-8's optimized thermal-electrical layout-making it the only choice for PPAP-bound 48V automotive power stages demanding both voltage margin and production-proven ruggedness.

Availability

DMTH84M1SPSQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, high-side load switches, and battery disconnect units requiring stable component supply, long-term lifecycle assurance, and full PPAP documentation support.

Supply support for DMTH84M1SPSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.

This MOSFET belongs to Diodes' Automotive Power portfolio, engineered specifically for AEC-Q101 compliance, high-temperature operation, and robustness in harsh automotive environments-including engine bays, battery systems, and ADAS power domains.

FAQ

What is the maximum allowable PCB copper area for thermal relief on the exposed drain pad?

The datasheet specifies two test conditions: minimum recommended pad layout (R_θJA = 96°C/W) and 2oz copper with 1-inch square thermal bias (R_θJA = 53°C/W). For production designs targeting TJ ≤ 155°C at 100A, Diodes recommends ≥400mm² total copper area connected to the exposed pad using ≥6 thermal vias (0.3mm diameter, filled) to inner ground plane.

Does DMTH84M1SPSQ-13 support paralleling multiple devices for higher current?

Yes-the symmetric 4-source/4-drain pinout and matched R_DS(ON) tolerance (±25% typical) enable direct paralleling without external current-sharing resistors. Layout must maintain identical trace lengths and thermal coupling; measured imbalance is <5% at 100A per device when mounted on shared 2oz copper thermal pad.

Is the gate threshold voltage shift over temperature within specification for 12V gate drive?

Yes-V_GS(TH) shifts from 3.2V at -55°C to 2.6V at +175°C (Fig. 8), remaining well below 12V. This ensures robust turn-on with standard 12V automotive gate drivers even at maximum junction temperature, with >9V gate overdrive margin.

Can this MOSFET replace older TO-220 or D2PAK devices in existing automotive designs?

Yes-with PCB redesign: the PowerDI5060-8 footprint differs significantly from D2PAK (TO-263) and requires new thermal pad layout and gate routing. Electrical replacement is valid: 80V/100A/4mΩ specs exceed most legacy 80V D2PAK MOSFETs, and AEC-Q101 qualification adds reliability assurance not present in older parts.