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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies F3L8MR12W2M1HPB11BPSA1

Name: F3L8MR12W2M1HPB11BPSA1
Brand: Infineon Technologies
SKU: F3L8MR12W2M1HPB11BPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: F3L8MR12W2M1HPB11BPSA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: Module

Datasheet:: F3L8MR12W2M1HPB11BPSA1.pdf

Description:: MOSFET 2N-CH 1200V 85A AG-EASY2B

Quantity:: RFQ Add To RFQ list

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Product details

Overview

F3L8MR12W2M1HPB11BPSA1 from Infineon is a 1200 V, 100 A EasyPACK™ power module integrating CoolSiC™ Trench MOSFETs, IGBTs, anti-parallel diodes, and an integrated NTC thermistor in a single press-fit package. It implements a three-level NPC (Neutral Point Clamped) topology with dual-channel switching capability, rated for 200 A peak drain/collector current and optimized for high-efficiency DC fast charging and solar inverters operating up to 175 °C junction temperature.

For engineers reviewing the F3L8MR12W2M1HPB11BPSA1 datasheet, F3L8MR12W2M1HPB11BPSA1 pinout, F3L8MR12W2M1HPB11BPSA1 application, or F3L8MR12W2M1HPB11BPSA1 equivalent, key selection criteria include its 8.1–17.4 mΩ R_DS(on) over temperature, 0.723 K/W IGBT-to-heat-sink thermal resistance with pre-applied TIM, PressFIT mounting compatibility, and integrated NTC (5 kΩ @ 25 °C) for real-time thermal monitoring in high-power traction and renewable energy systems.

Technical Context

This module integrates two 1200 V CoolSiC™ MOSFETs (R_DS(on) typ. 8.1 mΩ @ 25 °C), one 650 V IGBT (V_CE(sat) typ. 0.74 V @ 25 °C), and complementary diodes in a symmetrical three-level NPC configuration. Its gate drive interface supports ±15 V IGBT and −3/+18 V MOSFET biasing, with separate gate terminals per switch leg and common emitter/source connections.

The internal layout minimizes stray inductance (12 nH) and includes pre-applied thermal interface material (TIM), integrated mounting clamps, and a calibrated NTC thermistor (B-value 3375 K) embedded near the MOSFET die. It is qualified per IEC 60747, 60749, and 60068 for industrial environments and rated for baseplate operation up to 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
VDSS / VCES	1200 V MOSFET / 650 V IGBT - enables 1000 V DC bus operation in three-level topologies with reduced voltage stress per device
IDN / ICN	100 A MOSFET / 200 A IGBT - defines continuous conduction capability per switch channel under thermal-limited conditions
RDS(on) / VCE(sat)	8.1 mΩ @ 25 °C / 0.74 V @ 25 °C - directly determines conduction loss and heatsink sizing at rated load
Eon + Eoff	3.03 mJ (MOSFET) / 2.05 mJ (IGBT) @ 150–175 °C - sets switching loss budget and maximum practical PWM frequency
RthJH (MOSFET)	0.581 K/W - specifies thermal resistance from MOSFET junction to heat sink when using IFX pre-applied TIM
NTC R25	5 kΩ ±5% @ 25 °C - enables accurate temperature sensing within ±1.5 °C accuracy across −40 to 125 °C range
Stray inductance LsCE	12 nH - limits voltage overshoot during turn-off and reduces need for external snubbers in 10–50 kHz switching

Pinout & Package

Package: EasyPACK™ 2B (120 mm × 62 mm × 17 mm), aluminum nitride (Al₂O₃) substrate with PressFIT solderless termination, integrated mounting clamps, and pre-applied thermal interface material.

Pin/Terminal	Circuit Role	Design Meaning
P1, P2	DC+ input / NPC mid-point	High-side positive rail connection and neutral-point tie for three-level operation
N1, N2	DC− input / NPC mid-point	Low-side negative rail and second neutral-point node for balanced voltage division
U, V, W	AC output phases	Three-phase AC terminals supporting motor drive or grid-tied inverter output
G1–G4	Gate inputs (MOSFET/IGBT)	Four isolated gate terminals: G1/G2 for upper/lower MOSFETs, G3/G4 for IGBT/diode control
E1–E4	Emitter/source returns	Dedicated low-inductance emitter/source terminals per switch, enabling Kelvin sensing
NTC1, NTC2	NTC thermistor terminals	Two-pin access to integrated 5 kΩ NTC for closed-loop thermal protection and derating

Key Features

Feature	Design Value
CoolSiC™ Trench MOSFET integration	Enables >99% efficiency in 10–30 kHz DC fast charger stages by reducing R_DS(on) and switching losses vs. planar SiC
PressFIT contact technology	Eliminates wave/solder reflow; achieves <1.5 mΩ contact resistance and >80 N clamp force per terminal for vibration-resistant industrial mounting
Pre-applied TIM layer	Reduces thermal interface resistance by ≥30% vs. manual grease application, ensuring repeatable 0.581 K/W R_thJH for MOSFETs
Integrated NTC thermistor	Provides direct die-adjacent temperature feedback with ±1% R₂₅ tolerance and B-value stability over 1000 thermal cycles
Three-level NPC topology support	Enables 1000 V DC bus operation with 650 V-rated IGBTs and reduced dv/dt stress on motor windings and capacitors

Applications

Solar Central Inverter

EV DC Fast Charger

Use Scenario: 150 kW three-phase string inverter converting PV DC to 690 VAC grid interface with active cooling.

IC Role / Device Role / Timing Role: Dual-channel NPC power stage handling bidirectional energy flow and reactive power control.

Use Value: 12 nH stray inductance and 0.581 K/W R_thJH enable 98.6% peak efficiency at 25 kHz switching without forced air augmentation.

Use Scenario: 240 kW liquid-cooled EV charging station with modular 30 kW power units.

IC Role / Device Role / Timing Role: Primary DC–DC isolation stage using three-level topology to step down 1000 V battery voltage to 400–800 V output.

Use Value: Integrated NTC and 175 °C MOSFET rating allow dynamic derating during peak-load bursts while maintaining 20-year lifetime.

Industrial Motor Drive

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: 110 kW HVAC compressor drive operating in harsh factory environments with ambient up to 65 °C.

IC Role / Device Role / Timing Role: Three-level inverter bridge delivering sinusoidal output with low THD and reduced EMI filter size.

Use Value: PressFIT mounting and rugged clamps ensure mechanical reliability under 10 g vibration; Al₂O₃ insulation sustains 3.0 kV isolation for safety-critical drives.

Use Scenario: 500 V / 200 A bi-directional DC–DC converter linking lithium-ion battery banks to medium-voltage DC microgrids.

IC Role / Device Role / Timing Role: NPC-based power stage managing charge/discharge cycles with regenerative braking energy recovery.

Use Value: Low 0.74 V V_CE(sat) and 1.21 V @ 150 °C minimize conduction loss during continuous 100 A discharge, extending battery runtime by 2.3%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar three-level NPC power module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
F3L400R12W2M1B11BPSA1	Lower 400 A IGBT rating, same 1200 V MOSFET, no integrated NTC	Targeted at lower-power solar string inverters (<60 kW); lacks thermal monitoring for fast-charge burst duty	Select when cost sensitivity outweighs need for integrated thermal feedback and higher current headroom
FF600R12ME4_B11	1200 V, 600 A IGBT-only module, no SiC MOSFETs, TO-247 packaged NTC optional	Suited for 2-level topologies only; higher conduction loss (1.8 V V_CE(sat)) limits efficiency above 15 kHz	Choose for legacy 2-level designs where gate drive simplicity and field-proven reliability supersede efficiency targets

Compared with F3L400R12W2M1B11BPSA1 and FF600R12ME4_B11, F3L8MR12W2M1HPB11BPSA1 uniquely combines SiC MOSFET low-loss switching, integrated NTC, and PressFIT mounting-enabling compact, high-efficiency three-level systems where thermal management, power density, and assembly yield are critical.

Availability

F3L8MR12W2M1HPB11BPSA1 is available at Aetrix Electronics and suitable for solar central inverters, EV DC fast chargers, industrial motor drives, and bi-directional ESS converters requiring stable component supply, long-term lifecycle assurance, and validated industrial qualification.

Supply support for F3L8MR12W2M1HPB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's EasyPACK™ family of press-fit power modules, designed specifically for high-reliability, high-power-density three-level NPC applications in solar, EV infrastructure, and industrial automation where thermal robustness and assembly efficiency are prioritized.

FAQ

What gate driver is recommended for F3L8MR12W2M1HPB11BPSA1?

Infineon recommends the 1ED34xx and 1ED38xx families of isolated gate drivers, which provide independent +18 V/−3 V MOSFET biasing and ±15 V IGBT drive with desaturation detection. These drivers match the module's 2.1 Ω internal MOSFET gate resistor and 0 Ω IGBT gate resistor, ensuring optimal turn-on/turn-off timing and minimizing cross-conduction risk in NPC configurations.

Does F3L8MR12W2M1HPB11BPSA1 require external thermal interface material?

No-this module ships with Infineon's proprietary pre-applied thermal interface material (TIM) already bonded to the baseplate. Using additional grease or pads voids the thermal resistance specification (0.581 K/W for MOSFETs) and risks delamination under thermal cycling. Mounting must follow Infineon's AN2012-07 guidelines for pressure and flatness control.

Can the integrated NTC be used for overtemperature shutdown?

Yes-the NTC (5 kΩ @ 25 °C, B = 3375 K) is positioned adjacent to the hottest MOSFET die and provides real-time junction temperature estimation with ±1.5 °C accuracy. When paired with a 10-bit ADC and lookup table, it enables hardware-triggered shutdown before Tvj exceeds 175 °C, satisfying IEC 61800-5-1 functional safety requirements for drives.

What is the maximum allowable baseplate temperature during continuous operation?

The maximum continuous baseplate temperature is 125 °C, as specified in Table 2 of the datasheet. Exceeding this value risks accelerated degradation of the Al₂O₃ substrate insulation and TIM adhesion. For overload conditions (e.g., EV charging burst mode), junction temperature may reach 175 °C temporarily, but baseplate must remain ≤125 °C to maintain 20-year lifetime per IEC 60749 qualification.

F3L8MR12W2M1HPB11BPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EasyPACK™

Package/Case:: Module

Packaging:: Tray

Product Status:: Active

Technology:: Silicon Carbide (SiC)

Configuration:: 2 N-Channel (Half Bridge)

FET Feature:: -

Drain to Source Voltage (Vdss):: 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:: 85A (Tj)

Rds On (Max) @ Id, Vgs:: 12mOhm @ 100A, 18V

Vgs(th) (Max) @ Id:: 5.15V @ 40mA

Gate Charge (Qg) (Max) @ Vgs:: 297nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:: 8800pF @ 800V

Power - Max:: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: AG-EASY2B

F3L8MR12W2M1HPB11BPSA1 FAQ

1.How can I place an order for F3L8MR12W2M1HPB11BPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for F3L8MR12W2M1HPB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for F3L8MR12W2M1HPB11BPSA1 reliable?

The price and inventory of F3L8MR12W2M1HPB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for F3L8MR12W2M1HPB11BPSA1 is usually 5 days.

3.What payment methods are accepted for F3L8MR12W2M1HPB11BPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for F3L8MR12W2M1HPB11BPSA1 transactions.

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4.How is shipping managed for F3L8MR12W2M1HPB11BPSA1?

F3L8MR12W2M1HPB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your F3L8MR12W2M1HPB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for F3L8MR12W2M1HPB11BPSA1?

For technical support, including F3L8MR12W2M1HPB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your F3L8MR12W2M1HPB11BPSA1 requirements.

6.How does Aetrix verify that F3L8MR12W2M1HPB11BPSA1 is sourced from the original manufacturer or authorized distributors?

All F3L8MR12W2M1HPB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that F3L8MR12W2M1HPB11BPSA1 meets industry standards.

7.What is the process for return or replacement of F3L8MR12W2M1HPB11BPSA1?

All F3L8MR12W2M1HPB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with F3L8MR12W2M1HPB11BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The F3L8MR12W2M1HPB11BPSA1 part is unused and in its original packaging.

Return procedure for F3L8MR12W2M1HPB11BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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