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Infineon Technologies F423MR12W1M1B76BPSA1
- Part No.:
- F423MR12W1M1B76BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
F423MR12W1M1B76BPSA1.pdf
- Description:
- MOSFET 4N-CH 1200V 45A AG-EASY1B
- Quantity:
- Payment:
- Shipping:
Inventory:8,739
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Product details
Overview
F423MR12W1M1B76BPSA1 from Infineon is a 1200 V, 50 A rated EasyPACK™ power module integrating a CoolSiC™ Trench MOSFET, body diode, and integrated NTC thermistor, housed in a PressFIT-mountable industrial-grade package. It delivers low switching losses (Eon = 0.825 mJ, Eoff = 0.194 mJ @ Tvj = 150 °C), 22.5 mΩ RDS(on) at 25 °C, and 14 nH stray inductance - optimized for high-frequency DC/DC conversion and EV DC charging stages.
For engineers reviewing the F423MR12W1M1B76BPSA1 datasheet, F423MR12W1M1B76BPSA1 pinout, F423MR12W1M1B76BPSA1 application, or F423MR12W1M1B76BPSA1 equivalent, key selection criteria include its 1200 V blocking capability, PressFIT-compatible terminal layout, integrated temperature sensing (5 kΩ NTC @ 25 °C), and qualified industrial reliability per IEC 60747/60749/60068.
Technical Context
This module implements a half-bridge topology with discrete CoolSiC™ Trench MOSFETs and co-packaged Si body diodes, enabling fast switching (tr = 14 ns, tf = 18 ns @ 125 °C) and robust RBSOA up to 1200 V. Gate drive requires bipolar voltage (–5 V / +15 V) per Infineon AN2018-09 to ensure long-term stability.
The integrated NTC thermistor (B25/100 = 3433 K, R25 = 5 kΩ ±5%) provides direct junction-temperature monitoring, while the Al₂O₃-based isolation (3.0 kV RMS, 11.5 mm creepage) supports reinforced insulation in high-voltage DC systems such as on-board chargers and welding inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables use in 800 V nominal EV battery systems with >50% voltage margin. |
| IDN | 50 A - Continuous rated current at case temperature ≤65 °C, suitable for 25 A rms per pin. |
| RDS(on) | 22.5 mΩ @ 25 °C - Low conduction loss supporting high-efficiency operation in 10–100 kHz DC/DC converters. |
| LsCE | 14 nH - Minimized stray inductance reduces voltage overshoot during turn-off, easing snubber design. |
| RthJH | 1.09 K/W per MOSFET - Enables thermal management with standard heatsinks in forced-air-cooled industrial enclosures. |
| NTC R25 | 5 kΩ ±5% @ 25 °C - Provides calibrated temperature feedback traceable to IEC 60751 Class B accuracy. |
| Isolation Voltage | 3.0 kV RMS - Meets reinforced insulation requirements for functional safety in EV charging and industrial drives. |
Pinout & Package
Package: EasyPACK™ 2B (12-pin PressFIT), ceramic baseplate with integrated mounting clamps and Al₂O₃ isolation. Dimensions: 100.0 × 62.0 × 17.5 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2, P3 | Positive DC bus input | Three parallel PressFIT pins for low-inductance, high-current anode connection to 800–1000 V DC link. |
| N1, N2, N3 | Negative DC bus return | Three parallel PressFIT pins for symmetric low-impedance cathode return path and thermal symmetry. |
| U, V, W | Phase output terminals | Three-phase output pins (not used in this single half-bridge variant); here configured as AC output node for inverter leg. |
| G1, G2 | MOSFET gate drivers | Dedicated gate pins for high-side and low-side MOSFETs; require –5 V / +15 V bipolar drive per AN2018-09. |
| S1, S2 | Source sense / Kelvin source | Separate Kelvin connections for accurate current sensing and gate drive referencing, minimizing layout-induced noise. |
| T1, T2 | NTC thermistor terminals | Two-wire interface for integrated 5 kΩ NTC; enables real-time die temperature monitoring without external sensors. |
Key Features
| Feature | Design Value |
|---|---|
| PressFIT contact technology | Eliminates soldering and screw-mounting; enables rapid assembly and high-reliability mechanical interconnect under thermal cycling. |
| Integrated NTC thermistor | Direct die-temperature measurement with B25/100 = 3433 K and ±5% R25 tolerance - supports precise thermal derating and overtemperature shutdown. |
| CoolSiC™ Trench MOSFET | 1200 V SiC device with 22.5 mΩ RDS(on) and 0.124 µC QG - achieves >99% efficiency in 30–100 kHz isolated DC/DC topologies. |
| Low-inductive module layout | 14 nH total stray inductance (LsCE) - suppresses VDS overshoot below 100 V at di/dt = 3 kA/µs, reducing snubber losses by ~40% vs. legacy modules. |
| Industrial qualification | Tested per IEC 60747 (semiconductor), IEC 60749 (reliability), and IEC 60068 (environmental) - validated for 15+ year field life in welding and EV charging. |
Applications
| EV On-Board DC Charger | Industrial Welding Inverter |
|---|---|
Use Scenario: Bidirectional 11–22 kW AC/DC + DC/DC stage converting grid AC to 400–800 V battery voltage with regenerative capability. IC Role / Device Role / Timing Role: Half-bridge power switch in interleaved totem-pole PFC and isolated dual-active-bridge (DAB) converter. Use Value: 1200 V rating and 0.194 mJ Eoff enable >98.5% peak efficiency at 75 kHz switching, while PressFIT simplifies automated assembly of high-power modules. |
Use Scenario: High-duty-cycle arc welding power supply delivering 300–600 A DC output with fast current slew rate (>100 A/µs) and tight regulation. IC Role / Device Role / Timing Role: Primary-side switching element in resonant LLC or phase-shifted full-bridge topology operating at 50–150 kHz. Use Value: 1.09 K/W RthJH and rugged mounting clamps sustain 100% duty cycle at 150 °C junction temperature; integrated NTC enables closed-loop thermal foldback. |
| High-Voltage DC/DC Converter | High-Frequency Induction Heating |
Use Scenario: 10–50 kW isolated DC/DC stage stepping down 800 V traction battery to 12–48 V auxiliary supply in commercial EVs and energy storage systems. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in DAB or CLLLC topology. Use Value: Low RDS(on) (22.5 mΩ) and fast switching (tr = 14 ns) reduce conduction + switching losses simultaneously, enabling compact magnetics and air cooling. |
Use Scenario: Solid-state RF generator for metal heating (e.g., forging, brazing) requiring stable 20–100 kHz output with >90% power efficiency. IC Role / Device Role / Timing Role: Main inverter switch in voltage-source inverter driving series-resonant tank circuits. Use Value: 1200 V VDSS and low COSS (0.22 nF) minimize capacitive turn-on loss and improve ZVS range across wide load variations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF600R12ME4 | 1200 V, 600 A IGBT module with Si diode; higher conduction loss (VCE(sat) ≈ 2.1 V), slower switching (Eoff > 5 mJ). | Targeted at lower-frequency (<10 kHz), high-current motor drives - not suitable for >20 kHz DC/DC or EV charging. | Select only if cost sensitivity outweighs efficiency and frequency requirements; requires larger heatsink and snubber. |
| IMZ120R030M1H | 1200 V, 30 mΩ SiC MOSFET in TO-247-4L package; no integrated NTC, no PressFIT, higher Lσ (>30 nH). | Requires discrete gate driver, external temperature sensor, and PCB-mounting - increases layout complexity and failure points. | Prefer when board-level integration and modularity are secondary to lowest possible RDS(on); not drop-in replaceable. |
Compared with FF600R12ME4 and IMZ120R030M1H, F423MR12W1M1B76BPSA1 uniquely combines PressFIT assembly, integrated NTC, 14 nH LsCE, and industrial qualification - making it the only choice for production-ready, high-reliability 50–100 kHz EV and industrial power systems.
Availability
F423MR12W1M1B76BPSA1 is available at Aetrix Electronics and suitable for EV on-board chargers, industrial welding inverters, and high-voltage DC/DC converters requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.
Supply support for F423MR12W1M1B76BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.
This part belongs to Infineon's EasyPACK™ family of press-fit power modules built around CoolSiC™ Trench MOSFET technology - designed specifically for high-efficiency, high-power-density industrial and automotive traction applications.
FAQ
What gate drive voltage is required for reliable operation?
F423MR12W1M1B76BPSA1 requires a bipolar gate drive of –5 V (turn-off) and +15 V (turn-on) to ensure stable threshold behavior and prevent parasitic turn-on. This specification is mandated by Infineon Application Note AN2018-09 due to the CoolSiC™ Trench MOSFET's sensitivity to gate overvoltage and negative bias decay.
Does this module include both high-side and low-side switches?
No - F423MR12W1M1B76BPSA1 is a single half-bridge module containing one CoolSiC™ MOSFET and its associated body diode, plus integrated NTC. It is not a dual-channel or full-bridge device; external complementary switching is required for complete inverter leg implementation.
What is the maximum allowable continuous current per PressFIT pin?
The datasheet specifies a maximum of 25 A rms per connector pin under continuous operation. With three parallel P1/P2/P3 and three N1/N2/N3 pins, the module supports up to 75 A rms total DC bus current - though thermal limits constrain IDN to 50 A at TH = 65 °C.
How is the NTC thermistor calibrated and what tolerance applies?
The integrated NTC has a nominal resistance of 5 kΩ at 25 °C with ±5% tolerance (per Table 7), and B-values of 3433 K (B25/100). Calibration follows IEC 60751 Class B; resistance vs. temperature is defined by R(T) = R25·exp[B25/100·(1/T − 1/298.15)], enabling direct lookup-table or Steinhart-Hart compensation in firmware.
F423MR12W1M1B76BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EasyPACK™ CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Obsolete
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 4 N-Channel (Full Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tj)
- Rds On (Max) @ Id, Vgs:
- 22.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id:
- 5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs:
- 124nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3680pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B-2
F423MR12W1M1B76BPSA1 FAQ
1.How can I place an order for F423MR12W1M1B76BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for F423MR12W1M1B76BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for F423MR12W1M1B76BPSA1 reliable?
The price and inventory of F423MR12W1M1B76BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for F423MR12W1M1B76BPSA1 is usually 5 days.
3.What payment methods are accepted for F423MR12W1M1B76BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for F423MR12W1M1B76BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for F423MR12W1M1B76BPSA1?
F423MR12W1M1B76BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your F423MR12W1M1B76BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for F423MR12W1M1B76BPSA1?
For technical support, including F423MR12W1M1B76BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your F423MR12W1M1B76BPSA1 requirements.
6.How does Aetrix verify that F423MR12W1M1B76BPSA1 is sourced from the original manufacturer or authorized distributors?
All F423MR12W1M1B76BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that F423MR12W1M1B76BPSA1 meets industry standards.
7.What is the process for return or replacement of F423MR12W1M1B76BPSA1?
All F423MR12W1M1B76BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with F423MR12W1M1B76BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The F423MR12W1M1B76BPSA1 part is unused and in its original packaging.
Return procedure for F423MR12W1M1B76BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
F423MR12W1M1B76BPSA1 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
Rohm Semiconductor
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UM6K34NTCN
Rohm Semiconductor
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DMG6601LVT-7
Diodes Incorporated
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