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Infineon Technologies F435MR07W1D7S8B11ABPSA1
- Part No.:
- F435MR07W1D7S8B11ABPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
F435MR07W1D7S8B11ABPSA1.pdf
- Description:
- MOSFET 4N-CH 650V 35A MODULE
- Quantity:
- Payment:
- Shipping:
Inventory:42
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Product details
Overview
F435MR07W1D7S8B11ABPSA1 from Infineon is an EasyPACK™ 1B power module integrating a 650 V / 35 A CoolMOS™ CFD7A automotive MOSFET, integrated snubber capacitor (66 nF, 630 V), and NTC thermistor (10 kΩ @ 25 °C). It delivers low switching losses and low inductance for high-frequency operation in traction inverters and on-board chargers.
For engineers reviewing the F435MR07W1D7S8B11ABPSA1 datasheet, F435MR07W1D7S8B11ABPSA1 pinout, F435MR07W1D7S8B11ABPSA1 application, or F435MR07W1D7S8B11ABPSA1 equivalent, this module supports AQG 324-qualified automotive systems requiring press-fit mounting, real-time junction temperature monitoring, and robust dv/dt ruggedness (120 V/ns).
Technical Context
This module implements a half-bridge topology with discrete CoolMOS™ CFD7A silicon, optimized for 400–800 V DC-link EV applications. Its integrated 66 nF snubber capacitor reduces voltage overshoot during turn-off, while the embedded NTC enables direct thermal feedback at the die level.
The PressFIT contact system eliminates soldering and provides mechanical stability under thermal cycling; the module's isolation rating (2.5 kV RMS, 11.5 mm creepage) meets IEC 61140 Class 1 basic insulation requirements for automotive traction systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - Maximum blocking voltage compatible with 400–800 V DC-link battery systems |
| IDN | 35 A - Continuous rated current per switch at TH = 65 °C, defining steady-state conduction capability |
| RDS(on) | 39.4 mΩ (typ.) @ 25 °C - Low on-resistance enabling <1.5 W conduction loss at 35 A |
| dv/dt ruggedness | 120 V/ns - Enables reliable operation in fast-switching SiC-compatible gate drivers without false triggering |
| NTC R25 | 10 kΩ ±3% @ 25 °C - Precision resistance value for calibrated junction temperature estimation |
| Csnub | 66 nF @ 25 °C - Integrated snubber capacitance sized to suppress VDS overshoot in 10–50 kHz switching |
| RthJH | 0.992 K/W per MOSFET - Thermal resistance from junction to heatsink defines maximum allowable power dissipation |
Pinout & Package
EasyPACK™ 1B package: 12-pin press-fit module with integrated clamps, Al2O3 ceramic substrate, and isolated terminals. Dimensions: 55.0 × 35.0 × 8.5 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | DC+ input / high-side source | PressFIT pins for high-current DC bus connection; dual-pins reduce current density and thermal stress |
| N1, N2 | DC− input / low-side source | PressFIT return path with symmetrical layout to minimize loop inductance |
| U, V | Phase output terminals | Output nodes connecting to motor winding or charger transformer; designed for <15 nH stray inductance |
| G1, G2 | High-side gate drive | Dedicated gate pins with internal 3.8 Ω gate resistor; support isolated gate driver coupling |
| G3, G4 | Low-side gate drive | Independent gate routing to prevent cross-talk; matched impedance to G1/G2 |
| S1, S2 | NTC sensor terminals | Two-wire Kelvin connection for accurate NTC resistance measurement, minimizing lead error |
| E1, E2 | Source sense / Kelvin emitter | Separate emitter sensing pins for precise current feedback and desaturation detection |
Key Features
| Feature | Design Value |
|---|---|
| Integrated snubber capacitor | 66 nF, 630 V rated - Eliminates external RC snubber components and PCB layout complexity |
| PressFIT contact technology | 20–50 N clamp force per terminal - Enables solderless, vibration-resistant assembly compatible with automated press machines |
| Embedded NTC thermistor | 10 kΩ @ 25 °C, B25/100 = 3510 K - Provides traceable, die-proximate temperature sensing for overtemperature shutdown |
| Low-inductive design | <15 nH power loop inductance - Reduces voltage overshoot and EMI generation in >20 kHz switching applications |
| AQG 324 qualification | Release no. 02.1/2019 - Validates reliability for automotive traction and charging systems per ISO/TS 16949 and AEC-Q101 |
Applications
| On-Board Charger (OBC) | Traction Inverter Auxiliary Stage |
|---|---|
Use Scenario: 11 kW bidirectional OBC using two-level or three-level topologies with 400–800 V DC-link. IC Role / Device Role / Timing Role: Half-bridge power stage switching element handling AC/DC and DC/AC conversion. Use Value: Integrated snubber and low RDS(on) reduce switching losses by ~12% vs. discrete solutions, improving efficiency at 50–100 kHz. | Use Scenario: Auxiliary DC-DC converter supplying 12 V control power from main traction battery. IC Role / Device Role / Timing Role: High-side switch in synchronous buck or phase-shifted full-bridge configuration. Use Value: PressFIT mounting and NTC enable rapid prototyping and closed-loop thermal management without additional sensors. |
| EV Fast DC Charging Interface | High-Frequency Industrial SMPS |
Use Scenario: Secondary-side switching in liquid-cooled 150–350 kW DC fast chargers operating at 650 V nominal. IC Role / Device Role / Timing Role: Output rectification and isolation barrier switching device. Use Value: 120 V/ns dv/dt ruggedness prevents spurious turn-on during high di/dt transients common in multi-MW charging stacks. | Use Scenario: 20–50 kHz resonant converters in industrial UPS or welding equipment. IC Role / Device Role / Timing Role: Main power switch in LLC or phase-shifted ZVS topologies. Use Value: Low QG (0.141 µC) and fast switching (ton = 146 ns) enable >97% peak efficiency at 35 A load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage automotive power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF300R12ME4 | 1200 V IGBT-based, larger footprint (62 × 35 mm), higher conduction loss (1.8 V VCE(sat)) | Targeted at 600–900 V traction inverters with lower switching frequency (<10 kHz) | Select when system prioritizes rugged short-circuit withstand over high-frequency efficiency |
| FS800R07A2E3_B11 | 650 V, 800 A Si IGBT module, no integrated NTC or snubber, requires external temperature sensing | Designed for main inverter stages in commercial EVs, not auxiliary or charger subsystems | Select only for high-current (>100 A) primary inverter use where modularity and external component control are required |
Compared with FF300R12ME4 and FS800R07A2E3_B11, F435MR07W1D7S8B11ABPSA1 uniquely combines press-fit assembly, integrated thermal sensing, and snubbing in a compact 55 mm form factor-making it optimal for space-constrained, high-frequency auxiliary power stages rather than main traction or low-frequency IGBT applications.
Availability
F435MR07W1D7S8B11ABPSA1 is available at Aetrix Electronics and suitable for on-board chargers, traction inverter auxiliary stages, and high-frequency industrial SMPS requiring stable component supply, AQG 324 compliance, and press-fit manufacturability.
Supply support for F435MR07W1D7S8B11ABPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security ICs for automotive, industrial, and renewable energy markets.
This part belongs to Infineon's EasyPACK™ 1B product line-designed specifically for automotive-grade auxiliary power conversion modules requiring press-fit assembly, integrated protection, and thermal monitoring in EV charging and traction systems.
FAQ
What is the maximum continuous operating temperature of the MOSFET junction?
The MOSFET junction is rated for continuous operation up to 150 °C, validated under conditions of TH = 65 °C and VGS = 10 V. The module's RthJH = 0.992 K/W allows 35 A conduction at this limit when heatsink temperature remains ≤65 °C and thermal interface material conductivity is ≥1 W/(m·K).
Does the integrated NTC require external biasing or signal conditioning?
Yes-the NTC (10 kΩ @ 25 °C) requires a precision current source or voltage divider circuit for resistance measurement. Infineon recommends using a 10 µA constant-current excitation per AN2009-10, with analog-to-digital conversion referenced to a stable 2.5 V reference for ±1 °C accuracy across –40 to 150 °C.
Can this module be used in a full-bridge configuration?
No-F435MR07W1D7S8B11ABPSA1 contains one half-bridge (two MOSFETs) and cannot function as a full bridge alone. Two modules are required for full-bridge implementation, with careful attention to gate drive isolation, timing skew, and shared heatsink thermal coupling to avoid imbalance.
What is the creepage distance between terminals and heatsink?
The creepage distance from any terminal to the heatsink is 11.5 mm, verified per IEC 61140 for basic insulation. This value ensures safe operation at 650 V DC with pollution degree 2 and material group IIIa (CTI > 200), meeting AQG 324 requirements for automotive under-hood environments.
F435MR07W1D7S8B11ABPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EasyPACK™ 1B
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 4 N-Channel (Full Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 650V
- Current - Continuous Drain (Id) @ 25°C:
- 35A
- Rds On (Max) @ Id, Vgs:
- 39.4mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 4.45V @ 1.74mA
- Gate Charge (Qg) (Max) @ Vgs:
- 141nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6950pF @ 400V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- Module
F435MR07W1D7S8B11ABPSA1 FAQ
1.How can I place an order for F435MR07W1D7S8B11ABPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for F435MR07W1D7S8B11ABPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for F435MR07W1D7S8B11ABPSA1 reliable?
The price and inventory of F435MR07W1D7S8B11ABPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for F435MR07W1D7S8B11ABPSA1 is usually 5 days.
3.What payment methods are accepted for F435MR07W1D7S8B11ABPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for F435MR07W1D7S8B11ABPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for F435MR07W1D7S8B11ABPSA1?
F435MR07W1D7S8B11ABPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your F435MR07W1D7S8B11ABPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for F435MR07W1D7S8B11ABPSA1?
For technical support, including F435MR07W1D7S8B11ABPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your F435MR07W1D7S8B11ABPSA1 requirements.
6.How does Aetrix verify that F435MR07W1D7S8B11ABPSA1 is sourced from the original manufacturer or authorized distributors?
All F435MR07W1D7S8B11ABPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that F435MR07W1D7S8B11ABPSA1 meets industry standards.
7.What is the process for return or replacement of F435MR07W1D7S8B11ABPSA1?
All F435MR07W1D7S8B11ABPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with F435MR07W1D7S8B11ABPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The F435MR07W1D7S8B11ABPSA1 part is unused and in its original packaging.
Return procedure for F435MR07W1D7S8B11ABPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
F435MR07W1D7S8B11ABPSA1 Tags
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2N7002DW-7-F
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
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UM6K33NTN
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