Infineon Technologies F445MR12W1M1B76BPSA1

Overview

F445MR12W1M1B76BPSA1 from Infineon is a 1200 V, 25 A CoolSiC™ Trench MOSFET-based EasyPACK™ power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 0.388 mJ, Eoff = 0.071 mJ at Tvj = 150 °C), 45 mΩ RDS(on) at 25 °C, and 14 nH stray inductance for high-frequency hard-switching in DC/DC converters and EV DC chargers.

For engineers reviewing the F445MR12W1M1B76BPSA1 datasheet, F445MR12W1M1B76BPSA1 pinout, F445MR12W1M1B76BPSA1 application, or F445MR12W1M1B76BPSA1 equivalent, this module supports industrial-grade thermal cycling (–40 to 150 °C junction), IEC-qualified isolation (3.0 kV RMS), and gate-drive robustness with ±10 V / +20 V VGSS rating.

Technical Context

This module integrates a single-channel 1200 V SiC MOSFET with body diode and an embedded NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) in a low-inductance, PressFIT-mountable EasyPACK™ housing. Its 1.82 K/W junction-to-heatsink thermal resistance and 35 nH external loop inductance compatibility enable stable operation up to 150 °C junction temperature under 25 A continuous RMS current.

The device uses discrete gate drive with –5 V / +15 V logic-level control, exhibits fast switching (td(on) = 19 ns, tf = 16 ns), and maintains low COSS (0.11 nF) and Crss (0.014 nF) to minimize Miller-induced turn-on risk. Stray inductance is fixed at 14 nH across the power loop, enabling predictable dv/dt control up to 38.2 kV/µs during turn-off.

Key Specifications

Pinout & Package

Package: EasyPACK™ 2B (12-pin PressFIT, Al₂O₃ ceramic baseplate, 24 g mass). Mounting uses integrated clamps for mechanical ruggedness and thermal stability on heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC power module applications.

Compared with FF450R12ME4_B11 and FS800R07A2E3_B11, F445MR12W1M1B76BPSA1 uniquely combines 1200 V SiC performance, embedded NTC, PressFIT mounting, and IEC-qualified isolation-making it the sole option for compact, high-efficiency, thermally aware 10–100 kHz industrial and EV charging modules.

Availability

F445MR12W1M1B76BPSA1 is available at Aetrix Electronics and suitable for EV DC fast charging, industrial welding inverters, and high-frequency UPS systems requiring stable component supply, long-lifecycle support, and qualified industrial reliability.

Supply support for F445MR12W1M1B76BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to Infineon's CoolSiC™ EasyPACK™ product line, engineered specifically for high-efficiency, high-power-density industrial and electric vehicle power conversion where thermal precision, low-loss switching, and mechanical robustness are mandatory.

FAQ

What gate drive voltage is required for reliable operation?

F445MR12W1M1B76BPSA1 requires –5 V (negative turn-off) and +15 V (positive turn-on) gate-source voltage under all operating conditions. The datasheet specifies VGSS limits of –10 V to +20 V, but sustained operation outside –5/+15 V risks accelerated threshold voltage shift and reduced lifetime. Application Note AN2018-09 mandates these values to maintain stable VGS(th) and prevent parasitic turn-on.

How is the NTC thermistor calibrated and used in thermal protection?

The integrated NTC has R25 = 5 kΩ ±5% and B25/100 = 3433 K, allowing precise temperature calculation using the Steinhart-Hart equation. It connects directly between terminals T1 and T2; typical bias is 10–100 µA to avoid self-heating. Designers use its resistance to trigger shutdown when die temperature exceeds 145 °C, leveraging the known R–T curve and 1.82 K/W RthJH to map heatsink temperature to junction.

Can this module replace silicon IGBT modules in existing designs?

Direct replacement is possible only with circuit-level redesign: gate drive must be updated to –5/+15 V (not ±15 V), snubbers reduced due to lower Eoff and LsCE, and thermal management recalculated using 1.82 K/W RthJH instead of typical 2.5–3.0 K/W for IGBTs. Layout changes are required to accommodate PressFIT mounting and Kelvin source connections.

What isolation certifications apply to this module?

F445MR12W1M1B76BPSA1 is qualified per IEC 60747 (semiconductor devices), IEC 60749 (discrete reliability), and IEC 60068 (environmental testing). It achieves 3.0 kV RMS isolation (1 min, 50 Hz), 11.5 mm creepage (terminal-to-heatsink), and 10.0 mm clearance, meeting reinforced insulation requirements for 1000 V AC systems per IEC 61800-5-1 and UL 61800-5-1.