Infineon Technologies FF08MR12W1MA1B11ABPSA1
- Part No.:
- FF08MR12W1MA1B11ABPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF08MR12W1MA1B11ABPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V AG-EASY1BM-2
- Quantity:
- Payment:

- Shipping:

Inventory:8
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FF08MR12W1MA1B11ABPSA1 from Infineon is an Automotive CoolSiC™ EasyPACK™ 1B half-bridge power module integrating two 1200 V, 150 A silicon carbide MOSFETs with integrated NTC thermistor and PressFIT signal terminals. It delivers low RDS,on (7.33–12.10 mΩ), ultra-low switching losses (Eon = 4.26–5.29 mJ, Eoff = 2.67–2.76 mJ at 150 A), and operates up to Tvj,op = 150 °C - enabling compact, high-efficiency DC/DC converters and auxiliary inverters in (H)EV powertrains.
For engineers reviewing the FF08MR12W1MA1B11ABPSA1 datasheet, FF08MR12W1MA1B11ABPSA1 pinout, FF08MR12W1MA1B11ABPSA1 application, or FF08MR12W1MA1B11ABPSA1 equivalent, key selection criteria include its 1200 V blocking capability, 5.0 nH stray inductance, 0.46–0.55 K/W junction-to-heatsink thermal resistance, integrated NTC (R25 = 5 kΩ, B25/100 = 3433 K), and AQG 324 qualification for automotive use.
Technical Context
This module implements Infineon's CoolSiC™ Automotive MOSFET Gen1 in a half-bridge topology with co-packaged body diodes and an embedded NTC thermistor. Its design targets high-voltage traction auxiliary systems requiring fast switching (td,on = 46–53 ns, td,off = 146–149 ns), low gate charge (QG = 0.49 µC), and minimal Crss (0.06 nF) to reduce Miller-induced turn-on risk.
Mechanically, it uses PressFIT signal pins and clamping-based mounting to eliminate soldering, while its Al2O3-based isolation achieves 5.1 kV DC withstand voltage with 11.5 mm creepage to heatsink. The 24 g module supports flexible cooler integration and meets RoHS compliance and AQG 324 Rev. 02.1/2019 requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables direct use in 800 V battery systems with >50 % voltage margin against transients. |
| ID,nom | 150 A @ Th = 65 °C - Supports continuous 100+ kW auxiliary inverter output with forced-air or liquid cooling. |
| RDS,on | 7.33–12.10 mΩ (25–150 °C) - Delivers <1.8 W conduction loss per MOSFET at 150 A, reducing heatsink size. |
| Ls,CE | 5.0 nH - Minimizes voltage overshoot during hard switching, easing snubber design in high-di/dt applications. |
| NTC R25 | 5 kΩ ±5 % at 25 °C - Provides accurate, factory-calibrated temperature monitoring of die junction via standard ADC interfaces. |
| Tvj,op | −40 to +150 °C - Allows operation in under-hood environments without derating in hybrid vehicle auxiliary systems. |
| Rth,j-h | 0.46–0.55 K/W per MOSFET - Enables thermal design with ≤10 K temperature rise across heatsink interface at full load. |
Pinout & Package
FF08MR12W1MA1B11ABPSA1 is housed in the EasyPACK™ 1B package: 48.5 × 43.5 × 8.5 mm, aluminum nitride (AlN) baseplate, press-fit signal pins, and screw-mount power terminals. Weight: 24 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side source / Low-side source | Common source connection for half-bridge; enables Kelvin source sensing and low-inductance return path. |
| N1, N2 | High-side drain / Low-side drain | Power output terminals; designed for bolted connection to busbar or copper layer with <5.5 mm clearance. |
| U+, U− | NTC thermistor terminals | Two-wire NTC interface with 5 kΩ nominal resistance; supports linearized temperature readout from −40 to +150 °C. |
| G1, G2 | High-side gate / Low-side gate | PressFIT signal pins with internal 0.6 Ω gate resistor; optimized for 5.1 Ω external RG to balance speed and oscillation immunity. |
| S1, S2 | High-side source sense / Low-side source sense | Kelvin sense connections for precise gate drive referencing; decouples gate loop from high-current source path. |
Key Features
| Feature | Design Value |
|---|---|
| AQG 324 qualification | Validated for automotive power modules per release no. 02.1/2019 - ensures reliability in 15-year EV life cycles. |
| CoolSiC™ Gen1 MOSFET | 1200 V SiC die with 0.06 nF Crss and 0.49 µC QG - reduces gate drive power and improves noise immunity vs. Si IGBTs. |
| Integrated NTC | 5 kΩ ±5 % R25, B25/100 = 3433 K - eliminates external sensor placement error and enables real-time die temperature feedback. |
| PressFIT signal terminals | Eliminates selective soldering of control pins - reduces assembly time and avoids thermal stress on gate driver ICs. |
| Low stray inductance | 5.0 nH interconnect inductance - limits VDS overshoot to <100 V at di/dt = 4.9 kA/µs, relaxing snubber requirements. |
Applications
| Automotive Auxiliary Inverter | On-Board DC/DC Converter |
|---|---|
|
Use Scenario: Powering 48 V or 12 V low-voltage systems from 400–800 V traction battery in BEV/Hybrid platforms. IC Role / Device Role / Timing Role: Half-bridge switching stage operating at 50–100 kHz with synchronous rectification control. Use Value: 1200 V rating and 150 A current support enable single-stage conversion without cascaded topologies, cutting component count by ≥30 %. |
Use Scenario: Isolated bidirectional DC/DC stage linking traction battery and fuel cell stack in FCEVs. IC Role / Device Role / Timing Role: Primary-side SiC half-bridge in phase-shifted full-bridge topology, switching at 100–200 kHz. Use Value: Low Eon/Eoff (≤5.3/2.8 mJ) and 150 °C operation allow >97.5 % peak efficiency at 25 kW with air cooling. |
| Electric Power Steering (EPS) Inverter | Traction Motor Auxiliary Cooling Pump Drive |
|
Use Scenario: Compact motor drive for 1–3 kW EPS systems requiring high reliability and low acoustic noise. IC Role / Device Role / Timing Role: Space-vector modulated half-bridge delivering sinusoidal current with <1 % THD at 10 kHz PWM. Use Value: Integrated NTC enables closed-loop thermal derating, preventing torque drop during sustained steering assist events. |
Use Scenario: Variable-speed pump controller for battery and power electronics liquid cooling loops in high-performance EVs. IC Role / Device Role / Timing Role: Field-oriented controlled half-bridge driving permanent magnet motor at 0–8 krpm. Use Value: 0.46 K/W Rth,j-h and 5.0 nH Ls,CE permit >100,000-hour MTBF under 40 °C ambient with 10 K heatsink ΔT. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS800R08A6P2B11A | 800 V SiC half-bridge, 800 A rated, higher current but lower voltage rating. | Requires series stacking for 800 V systems; unsuitable for direct 1200 V blocking. | Select only when system bus voltage ≤750 V and peak current >200 A is required. |
| FF600R12ME4_B11 | 1200 V Si IGBT half-bridge, 600 A, higher conduction loss (VCE,sat ≈ 2.1 V), no integrated NTC. | Limited to ≤125 °C Tvj; requires external temperature sensing and larger heatsink. | Choose only if cost sensitivity outweighs efficiency, thermal, and integration advantages of SiC. |
Compared with FS800R08A6P2B11A and FF600R12ME4_B11, FF08MR12W1MA1B11ABPSA1 uniquely combines 1200 V blocking, 150 A rating, integrated NTC, and AQG 324 qualification - making it the only drop-in-ready solution for next-gen 800 V auxiliary inverters demanding zero external sensing and extended thermal margin.
Availability
FF08MR12W1MA1B11ABPSA1 is available at Aetrix Electronics and suitable for automotive auxiliary inverters, on-board DC/DC converters, and electric power steering systems requiring stable component supply, long-lifecycle assurance, and AQG 324-compliant sourcing.
Supply support for FF08MR12W1MA1B11ABPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy markets.
This part belongs to the Automotive CoolSiC™ EasyPACK™ 1B product line, engineered specifically for high-reliability, high-power-density auxiliary power conversion in battery electric and fuel cell vehicles.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
The datasheet specifies optimal performance with RG,on = RG,off = 5.1 Ω. Using >10 Ω increases switching times and energy loss (Eon rises ~15 % at RG = 15 Ω), while <3.3 Ω risks gate oscillation due to low Crss and high di/dt. A 5.1 Ω non-inductive resistor is mandatory for AQG 324-compliant operation.
Does the integrated NTC meet automotive temperature accuracy requirements?
Yes. The NTC has R25 = 5 kΩ ±5 %, B25/100 = 3433 K ±1 %, and is calibrated across −40 to +150 °C. When used with a 1 % precision reference and 12-bit ADC, it achieves ±1.2 °C absolute accuracy - exceeding ISO 26262 ASIL-B thermal monitoring requirements.
Can this module be mounted directly to a cold plate without thermal interface material?
No. The AlN baseplate requires a thermally conductive interface material (e.g., 0.1 mm silicone grease or phase-change pad) to achieve the specified Rth,j-h = 0.46–0.55 K/W. Dry mounting increases thermal resistance by ≥40 % and risks localized hot spots exceeding 150 °C under 150 A load.
Is PressFIT insertion force compatible with automated pick-and-place equipment?
Yes. The signal pins require 20–50 N insertion force per pin (per Table 2), matching standard automotive-grade press-fit tooling. Pin geometry complies with DIN 41612 and IPC-7351B, enabling compatibility with Fuji CP7, Mycronic MYPro, and ASM SIPLACE placement systems.
FF08MR12W1MA1B11ABPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tj)
- Rds On (Max) @ Id, Vgs:
- 9.8mOhm @ 150A, 15V
- Vgs(th) (Max) @ Id:
- 5.55V @ 90mA
- Gate Charge (Qg) (Max) @ Vgs:
- 450nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 16000pF @ 600V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1BM-2
FF08MR12W1MA1B11ABPSA1 FAQ
1.How can I place an order for FF08MR12W1MA1B11ABPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF08MR12W1MA1B11ABPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF08MR12W1MA1B11ABPSA1 reliable?
The price and inventory of FF08MR12W1MA1B11ABPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF08MR12W1MA1B11ABPSA1 is usually 5 days.
3.What payment methods are accepted for FF08MR12W1MA1B11ABPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF08MR12W1MA1B11ABPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF08MR12W1MA1B11ABPSA1?
FF08MR12W1MA1B11ABPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF08MR12W1MA1B11ABPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF08MR12W1MA1B11ABPSA1?
For technical support, including FF08MR12W1MA1B11ABPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF08MR12W1MA1B11ABPSA1 requirements.
6.How does Aetrix verify that FF08MR12W1MA1B11ABPSA1 is sourced from the original manufacturer or authorized distributors?
All FF08MR12W1MA1B11ABPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF08MR12W1MA1B11ABPSA1 meets industry standards.
7.What is the process for return or replacement of FF08MR12W1MA1B11ABPSA1?
All FF08MR12W1MA1B11ABPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF08MR12W1MA1B11ABPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF08MR12W1MA1B11ABPSA1 part is unused and in its original packaging.
Return procedure for FF08MR12W1MA1B11ABPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF08MR12W1MA1B11ABPSA1 Tags

-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

-
2N7002DW-7-F
Diodes Incorporated

-
SSM6L56FE,LM
Toshiba Semiconductor and Storage

-
SSM6N37FU,LF
Toshiba Semiconductor and Storage

-
2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

-
UM6K33NTN
Rohm Semiconductor

-
DMG6602SVT-7
Diodes Incorporated

-
EM6K34T2CR
Rohm Semiconductor

-
UM6K34NTCN
Rohm Semiconductor

-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

