Infineon Technologies FF17MR12W1M1HB11BPSA1

Overview

FF17MR12W1M1HB11BPSA1 from Infineon is a 1200 V, 50 A dual-channel SiC MOSFET power module in EasyDUAL™ 2L package with integrated NTC thermistor and PressFIT terminals. It implements a half-bridge topology using CoolSiC™ trench MOSFETs, delivers low switching losses (Eon = 1.02 mJ, Eoff = 0.157 mJ at Tvj = 175 °C), and supports high-frequency DC/DC conversion up to 100 kHz in EV DC chargers.

For engineers reviewing the FF17MR12W1M1HB11BPSA1 datasheet, FF17MR12W1M1HB11BPSA1 pinout, FF17MR12W1M1HB11BPSA1 application, or FF17MR12W1M1HB11BPSA1 equivalent, key selection criteria include its 9 nH stray inductance, 0.8 K/W junction-to-heatsink thermal resistance per switch, -5/15 V gate drive voltage range, and integrated 5 kΩ NTC for real-time temperature monitoring in industrial UPS and traction inverters.

Technical Context

This module integrates two discrete 1200 V CoolSiC™ trench MOSFETs in a symmetrical half-bridge configuration with independent source, drain, and gate terminals for each channel. Its low-inductive layout (LsCE = 9 nH) and 2.1 mΩ terminal-to-chip resistance enable fast switching (td(on) = 36 ns, tf = 14 ns) while maintaining robust short-circuit capability (ISC = 410 A at Tvj = 150 °C).

The integrated NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) is electrically isolated and thermally coupled to both dies, enabling accurate die temperature estimation. The PressFIT contact system eliminates soldering and ensures mechanical stability under thermal cycling, validated per IEC 60068 for industrial environments.

Key Specifications

Pinout & Package

FF17MR12W1M1HB11BPSA1 uses the EasyDUAL™ 2L package (120 mm × 62.5 mm × 17 mm), featuring PressFIT-compatible copper terminals with integrated mounting clamps for direct heatsink attachment without screws or solder. The module contains two independent SiC MOSFETs in half-bridge topology, with separate high-side and low-side gate, source, and drain connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.

Compared with IXFN120N120T2 and CMTZ2M12070D, FF17MR12W1M1HB11BPSA1 uniquely combines PressFIT mounting, 9 nH stray inductance, and calibrated NTC in a compact EasyDUAL™ form factor-enabling faster system integration, higher power density, and simplified thermal management in space-constrained EV and industrial applications.

Availability

FF17MR12W1M1HB11BPSA1 is available at Aetrix Electronics and suitable for EV DC fast charging, industrial UPS systems, and high-frequency DC/DC converters requiring stable component supply, long-lifecycle support, and qualified industrial-grade reliability.

Supply support for FF17MR12W1M1HB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's CoolSiC™ EasyDUAL™ product line, engineered for high-efficiency, high-reliability power conversion in electric mobility and industrial automation where low-loss switching, thermal robustness, and mechanical integration are critical.

FAQ

What gate drive voltage is recommended for FF17MR12W1M1HB11BPSA1?

The datasheet specifies VGS(on) = 15–18 V and VGS(off) = −5 to 0 V. A −5/15 V gate drive ensures optimal RDS(on), switching speed, and short-circuit ruggedness. Using +18 V increases conduction loss margin but raises gate oxide stress; −5 V improves noise immunity and body diode commutation behavior.

Does FF17MR12W1M1HB11BPSA1 require external gate resistors?

Yes. Although it features an internal gate resistor of 4.1 Ω, external RG(on) = 6.8 Ω and RG(off) = 1 Ω are used in characterization to control di/dt and dv/dt. External resistors remain necessary to tailor switching behavior to specific circuit parasitics, EMI targets, and thermal trade-offs.

How is the NTC thermistor calibrated in FF17MR12W1M1HB11BPSA1?

The NTC has R25 = 5 kΩ ±5% and B25/100 = 3433 K, with deviation tolerance specified at 100 °C. Calibration is performed per Infineon Application Note AN2021-13, using two-point lookup (25 °C and 100 °C) and B-parameter interpolation to achieve ±1.5 °C accuracy across −40 to 175 °C die temperature range.

Can FF17MR12W1M1HB11BPSA1 be paralleled with identical modules?

No-this module is not designed for parallel operation. Its low stray inductance and matched die characteristics assume single-module use in a defined layout. Paralleling would unbalance current sharing due to PCB trace asymmetry and thermal coupling differences, risking overstress. Use higher-current modules (e.g., FF300R12ME4) instead.