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Infineon Technologies FF1MR12KM1HPHPSA1
- Part No.:
- FF1MR12KM1HPHPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
FF1MR12KM1HPHPSA1.pdf
- Description:
- MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:16
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Product details
Overview
FF1MR12KM1HPHPSA1 from Infineon is a 62 mm C-Series dual-channel SiC MOSFET power module integrating two 1200 V, 560 A CoolSiC™ trench MOSFETs with integrated body diodes, pre-applied thermal interface material (TIM), and 4 kV AC insulation rating. It delivers low RDS(on) (1.47 mΩ typ. @ 25 °C), ultra-low switching losses (Eon = 23.3 mJ, Eoff = 16.7 mJ @ 175 °C), and junction-to-heatsink thermal resistance of 0.104 K/W - enabling high-efficiency, high-frequency DC/DC converters in EV fast-charging systems.
For engineers reviewing the FF1MR12KM1HPHPSA1 datasheet, FF1MR12KM1HPHPSA1 pinout, FF1MR12KM1HPHPSA1 application, or FF1MR12KM1HPHPSA1 equivalent, key selection criteria include validated 1120 A peak repetitive drain current, gate drive voltage range (-5 V to +18 V), 20 nH stray inductance, 175 °C max operating junction temperature, and industrial qualification per IEC 60747/60749/60068.
Technical Context
This dual-MOSFET half-bridge module uses Infineon's 1200 V CoolSiC™ trench technology, optimized for hard-switched topologies with fast dv/dt (10.7 kV/µs) and di/dt (5.9 kA/µs) capability. Its symmetric layout supports interleaved or phase-shifted modulation schemes in bidirectional energy conversion stages.
The module integrates pre-applied TIM for consistent thermal interface performance, features Al2O3 ceramic isolation with 29 mm creepage (terminal-to-heatsink), and supports gate drive with external RGon = 4.3 Ω / RGoff = 1.8 Ω for controlled turn-on/turn-off timing (tdon = 150 ns, tf = 45 ns @ 175 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables operation in 1000 V DC bus systems with 20% safety margin for transient overvoltage. |
| IDN | 560 A - Continuous rated current per switch at TH = 65 °C, supporting >1 MW power density in liquid-cooled stacks. |
| RDS(on) | 1.47 mΩ (typ. @ 25 °C) - Minimizes conduction loss in high-current, medium-duty-cycle applications like solar inverters. |
| Eon/Eoff | 23.3 mJ / 16.7 mJ (@ 175 °C) - Enables >100 kHz switching in DC/DC converters without excessive thermal derating. |
| Rth,JH | 0.104 K/W - Achieved with pre-applied TIM; enables direct mounting to cold plates with predictable thermal budget. |
| VISOL | 4.0 kV AC (1 min) - Meets reinforced insulation requirements for EV charging and UPS systems per IEC 62109. |
| LsCE | 20 nH - Low stray inductance reduces voltage overshoot and gate oscillation in high-di/dt switching. |
Pinout & Package
FF1MR12KM1HPHPSA1 is housed in a 62 mm C-Series industrial power module package with copper baseplate, Al2O3 isolation, and standardized screw-mount terminals (M6). Dimensions: 62 mm × 108 mm × 17 mm (L × W × H); weight: 340 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side source / Low-side source | Common source connection point for half-bridge configuration; electrically tied internally for dual-MOSFET topology. |
| N1, N2 | High-side drain / Low-side drain | Power output terminals - N1 connects to upper switch drain, N2 to lower switch drain; supports bidirectional current flow. |
| G1, G2 | High-side gate / Low-side gate | Isolated gate inputs; require separate gate drivers with negative bias (-5 V) for reliable turn-off and dV/dt immunity. |
| S1, S2 | High-side source sense / Low-side source sense | Kelvin source connections for accurate gate drive referencing and current sensing; reduce Miller-induced false triggering. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ trench MOSFET technology | Enables 1200 V blocking with 1.47 mΩ RDS(on), reducing conduction loss by ~40% vs. comparable Si IGBT modules. |
| Pre-applied thermal interface material (TIM) | Eliminates manual TIM dispensing; ensures repeatable 0.104 K/W Rth,JH and mitigates thermal cycling fatigue at interface. |
| 4 kV AC isolation & 29 mm creepage | Supports functional safety compliance (e.g., ISO 26262 ASIL-B) in high-voltage traction and grid-tied systems. |
| Low 20 nH stray inductance | Reduces switching voltage overshoot below 100 V at 5.9 kA/µs di/dt, relaxing snubber design and EMI filter requirements. |
| Industrial qualification (IEC 60747/60749/60068) | Validated for 15-year field life under thermal cycling (-40 °C to 125 °C baseplate), humidity, and vibration stress. |
Applications
| EV DC Fast Charging | Solar Central Inverter |
|---|---|
|
Use Scenario: 360 kW liquid-cooled DC charger using interleaved dual-active-bridge topology with 100 kHz switching. IC Role / Device Role / Timing Role: Dual-channel SiC MOSFET module serving as primary high-frequency power switches in both input and output bridges. Use Value: Enables >98.5% peak efficiency and compact magnetics due to low Eon/Eoff and RDS(on), while pre-applied TIM ensures thermal reliability across 10,000+ charge cycles. |
Use Scenario: 500 kW central inverter converting PV DC to 690 V AC grid with active front-end rectification and transformerless architecture. IC Role / Device Role / Timing Role: Half-bridge power stage for three-phase inverter legs, operating at 16 kHz with unipolar PWM. Use Value: Delivers 1200 V blocking capability and 560 A continuous current per switch, eliminating need for parallel devices and simplifying gate drive layout. |
| Uninterruptible Power Supply (UPS) | Energy Storage System (ESS) Bi-directional Converter |
|
Use Scenario: 250 kVA double-conversion online UPS with battery backup, requiring zero-transfer-time switchover and harmonic mitigation. IC Role / Device Role / Timing Role: Core switching element in IGBT/SiC hybrid inverter stage handling both rectification and inversion functions. Use Value: Supports 175 °C junction operation during overload events and provides stable VSD (3.85 V @ 175 °C) for body diode conduction during regeneration. |
Use Scenario: 2 MW utility-scale ESS converter interfacing Li-ion battery stack (1500 V DC) with medium-voltage grid via modular multilevel topology. IC Role / Device Role / Timing Role: Building block for half-bridge submodules in cascaded H-bridge or MMC configurations. Use Value: 1120 A peak current rating and 4.0 kV isolation enable scalable, fault-tolerant designs meeting IEEE 1547-2018 grid interconnection standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-power SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed CM300DX-24T | 1200 V / 300 A single-channel; no pre-applied TIM; higher RDS(on) (2.2 mΩ); requires external isolation. | Requires paralleling for 560 A current; lacks integrated thermal interface and 4 kV isolation. | Select when cost sensitivity outweighs thermal integration needs and system-level TIM control is preferred. |
| Mitsubishi CM1200HC-24H | 1200 V / 1200 A Si IGBT module; 2.5× higher switching loss; 150 °C max Tj; no body diode optimization. | Lower frequency operation (<20 kHz); larger heatsink required; unsuitable for >60 kHz DC/DC topologies. | Select only for legacy IGBT-based designs where SiC adoption is constrained by gate driver compatibility or qualification timelines. |
Compared with CM300DX-24T and CM1200HC-24H, FF1MR12KM1HPHPSA1 uniquely combines 560 A current rating, pre-applied TIM, 4 kV isolation, and 175 °C operation in a single 62 mm footprint - delivering superior power density and thermal predictability for next-generation EV chargers and renewable energy converters.
Availability
FF1MR12KM1HPHPSA1 is available at Aetrix Electronics and suitable for EV DC fast charging, solar central inverters, and uninterruptible power supply (UPS) systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.
Supply support for FF1MR12KM1HPHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
This device belongs to Infineon's CoolSiC™ 62 mm C-Series module portfolio, engineered specifically for high-efficiency, high-reliability power conversion in electric vehicle infrastructure, renewable energy, and industrial UPS applications.
FAQ
What gate drive voltage is recommended for FF1MR12KM1HPHPSA1?
Infineon specifies VGS(on) = +15 V to +18 V and VGS(off) = –5 V to 0 V. A –5 V negative bias is mandatory for robust noise immunity and prevention of spurious turn-on during high dv/dt commutation. Gate drive must limit peak current to avoid exceeding the internal 0.9 Ω gate resistor's thermal limits.
Does FF1MR12KM1HPHPSA1 include an integrated temperature sensor?
No, this module does not integrate a temperature sensor. Thermal monitoring must be implemented externally using either baseplate-mounted NTC thermistors (as specified in Infineon Application Note AN2012-07) or infrared sensors targeting the copper baseplate surface, calibrated against the documented Rth,JH = 0.104 K/W.
Can FF1MR12KM1HPHPSA1 be used in a full-bridge configuration?
Yes - the module contains two independent SiC MOSFETs with isolated gates and sources, enabling use as one leg of a full-bridge. For full-bridge implementation, two modules are required (four total switches), with careful attention to gate loop inductance and Kelvin source routing to maintain shoot-through immunity.
What is the maximum allowable mounting torque for the terminal screws?
The datasheet specifies 2.5–5 Nm for M6 terminal connection screws. Exceeding 5 Nm risks damaging the aluminum terminal pad or compromising solder joint integrity. Mounting must follow Infineon Application Note AN2012-07, including torque sequence and use of thread-locking compound for vibration-prone environments.
FF1MR12KM1HPHPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FF1MR12KM1HPHPSA1 FAQ
1.How can I place an order for FF1MR12KM1HPHPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF1MR12KM1HPHPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF1MR12KM1HPHPSA1 reliable?
The price and inventory of FF1MR12KM1HPHPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF1MR12KM1HPHPSA1 is usually 5 days.
3.What payment methods are accepted for FF1MR12KM1HPHPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF1MR12KM1HPHPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF1MR12KM1HPHPSA1?
FF1MR12KM1HPHPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF1MR12KM1HPHPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF1MR12KM1HPHPSA1?
For technical support, including FF1MR12KM1HPHPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF1MR12KM1HPHPSA1 requirements.
6.How does Aetrix verify that FF1MR12KM1HPHPSA1 is sourced from the original manufacturer or authorized distributors?
All FF1MR12KM1HPHPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF1MR12KM1HPHPSA1 meets industry standards.
7.What is the process for return or replacement of FF1MR12KM1HPHPSA1?
All FF1MR12KM1HPHPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF1MR12KM1HPHPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF1MR12KM1HPHPSA1 part is unused and in its original packaging.
Return procedure for FF1MR12KM1HPHPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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