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Infineon Technologies FF2000UXTR33T2M1BPSA1
- Part No.:
- FF2000UXTR33T2M1BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF2000UXTR33T2M1BPSA1.pdf
- Description:
- MOSFET 2N-CH 3300V 9AG-XHP2K33
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
FF2000UXTR33T2M1 from Infineon is a 3.3 kV, 750 A XHP™2 dual-channel half-bridge power module integrating two CoolSiC™ Trench MOSFETs with integrated NTC thermistors and body diodes, rated for continuous operation at 175 °C junction temperature, used in high-power traction inverters and industrial medium-voltage converters.
For engineers reviewing the FF2000UXTR33T2M1 datasheet, FF2000UXTR33T2M1 pinout, FF2000UXTR33T2M1 application, or FF2000UXTR33T2M1 equivalent, key selection criteria include VDSS = 3300 V, IDN = 750 A, RDS(on) = 3.1 mΩ (Tvj = 25 °C), Eon/Eoff energy loss per pulse, and AlSiC baseplate thermal cycling capability.
Technical Context
This module implements a dual half-bridge topology with isolated gate drive inputs per channel, optimized for hard-switched 175 °C operation using SiC trench MOSFETs. Its low stray inductance (10 nH) and low gate charge (3.75 µC) enable high-frequency switching up to 50 kHz in high-power converters.
The integrated NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) provides real-time junction temperature monitoring, while the AlN substrate (low thermal resistance) and AlSiC baseplate ensure robust thermal management under repeated thermal cycling stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 3300 V - Withstands DC link voltages up to 2100 V under IEC 60747 isolation requirements, enabling use in 3.3 kV-class traction and grid applications. |
| IDN | 750 A - Continuous drain current rating at Tvj = 175 °C, supporting high-power motor drives without forced air cooling. |
| RDS(on) | 3.1 mΩ (typ.) at 25 °C - Enables low conduction loss (< 1.7 kW at 750 A), critical for efficiency in >1 MW inverters. |
| Eon/Eoff | 260 mJ / 100 mJ at 175 °C - Low switching energy enables high-frequency operation with reduced heatsink volume and EMI filtering burden. |
| LsCE | 10 nH - Minimizes voltage overshoot during turn-off, reducing snubber design complexity and improving system reliability. |
| Tvj,op | −40 to +175 °C - Extended junction temperature range allows compact packaging and eliminates derating in demanding environments. |
| RthJC | 33.0 K/kW per MOSFET - Enables direct thermal coupling to liquid-cooled heat sinks with predictable junction-to-case thermal path. |
Pinout & Package
XHP™2 package: 33 mm × 96 mm footprint, AlSiC baseplate, CTI > 600, creepage ≥ 34 mm (terminal-to-terminal), clearance ≥ 8 mm (terminal-to-terminal), weight 720 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC bus input (high-side source) | Dual parallel terminals reduce current density and contact resistance for 1500 A peak IDRM capability. |
| N1, N2 | Negative DC bus input (low-side source) | Isolated low-inductance return path; supports symmetrical layout for balanced current sharing. |
| U, V, W | Phase output terminals | Three-phase AC output nodes; designed for direct connection to motor windings or transformer primaries. |
| G1+, G1− | Gate drive inputs (Channel 1) | Isolated differential gate interface with −5 V / +15 V recommended bias; internal 1 Ω RGint limits dV/dt-induced ringing. |
| G2+, G2− | Gate drive inputs (Channel 2) | Independent gate control for second half-bridge; enables interleaved or phase-shifted modulation schemes. |
| NTC1, NTC2 | NTC thermistor terminals | Two independent NTC sensors (5 kΩ @ 25 °C) per channel for localized temperature feedback and thermal imbalance detection. |
Key Features
| Feature | Design Value |
|---|---|
| Low-inductive module layout | 10 nH stray inductance reduces voltage overshoot by >30% vs. legacy packages, lowering snubber losses and gate driver stress. |
| AlN substrate + AlSiC baseplate | Thermal resistance RthCH = 25.8 K/kW (λgrease = 1 W/m·K); withstands >10,000 thermal cycles between −40 °C and +150 °C baseplate temperature. |
| CoolSiC™ Trench MOSFET technology | 3.3 kV blocking with 3.1 mΩ RDS(on); achieves >99% efficiency at 1 MHz switching in resonant topologies due to low Coss (2.1 nF) and Qg (3.75 µC). |
| Integrated body diode | VSD = 4.5 V max at 175 °C and 750 A; reverse recovery energy Erec = 56 mJ at 175 °C - enables ZVS-assisted commutation in soft-switching converters. |
| IEC-qualified insulation | 6.0 kV RMS isolation test voltage, CTI > 600, creepage ≥ 40 mm (terminal-to-baseplate) - meets IEC 60747 and 60068 for industrial and traction safety standards. |
Applications
| Traction Inverter | High-Power Grid Converter |
|---|---|
|
Use Scenario: Main inverter for 2–4 MW electric locomotive or metro propulsion systems operating at 1.5–3.3 kV DC link voltage. IC Role / Device Role / Timing Role: Dual-channel half-bridge power stage delivering variable-frequency, variable-voltage AC to asynchronous traction motors. Use Value: 175 °C operation eliminates need for active derating; low Eon/Eoff enables 10–20 kHz PWM with < 2.5% total harmonic distortion (THD) in motor current. |
Use Scenario: Active front-end rectifier and STATCOM in HVDC intertie stations requiring bidirectional 3.3 kV, 1.5 kA power flow. IC Role / Device Role / Timing Role: High-voltage switching cell in multilevel NPC or ANPC topology with precise dead-time control and fast fault response. Use Value: 10 nH LsCE ensures < 500 ns overvoltage clamping time during short-circuit events, meeting IEC 62109 fault ride-through requirements. |
| Industrial Medium-Voltage Drive | High-Frequency Induction Heater |
|
Use Scenario: 1.2–2.5 MW variable-speed drive for mining conveyors or marine propulsion, operating in ambient temperatures up to 60 °C. IC Role / Device Role / Timing Role: Output stage in three-level T-type inverter with integrated temperature sensing for dynamic derating and predictive maintenance. Use Value: Dual NTCs (5 kΩ ±5% at 100 °C) provide per-channel thermal feedback, enabling < ±1.5 °C junction temperature estimation accuracy for lifetime modeling. |
Use Scenario: Resonant inverter stage in 100–500 kW induction heating systems operating at 20–100 kHz with high di/dt demands. IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element in series-resonant tank circuit with zero-voltage switching (ZVS) capability. Use Value: Low Coss (2.1 nF) and fast fall time (76 ns) allow stable ZVS across full load range, reducing switching losses by >40% vs. silicon IGBT modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF2600UXTR33T2M1 | Same XHP™2 package, identical pinout and thermal specs; higher IDN (750 A vs. 600 A) and lower RDS(on) (3.1 mΩ vs. 3.8 mΩ). | Supports higher continuous power density (up to 2.4 MW vs. 1.9 MW) in same footprint; requires higher gate drive current (±15 A peak). | Select when system-level power density and thermal margin exceed 15% of baseline design. |
| FF300R33ME4 | 3.3 kV, 300 A discrete SiC MOSFET module in EconoDUAL™3; RDS(on) = 4.2 mΩ, no integrated NTC, higher LsCE (25 nH). | Requires external temperature sensing and additional paralleling for 750 A; suitable for modular multi-level converter (MMC) submodules. | Select when modularity, field-replaceability, or cost-per-kW optimization outweighs integration benefits. |
Compared with FF2600UXTR33T2M1 and FF300R33ME4, FF2000UXTR33T2M1 delivers superior current density and integrated thermal monitoring in a drop-in compatible XHP™2 form factor, making it optimal for space-constrained, high-reliability traction and grid applications where thermal predictability and switching efficiency are primary constraints.
Availability
FF2000UXTR33T2M1 is available at Aetrix Electronics and suitable for traction drives, high-power grid converters, industrial medium-voltage drives, and high-frequency induction heaters requiring stable component supply across long production lifecycles.
Supply support for FF2000UXTR33T2M1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
This part belongs to the CoolSiC™ XHP™2 module product line, engineered for high-efficiency, high-reliability power conversion in 3.3 kV industrial and traction systems where thermal resilience and switching performance are critical.
FAQ
What is the maximum allowable baseplate temperature for FF2000UXTR33T2M1?
The maximum baseplate operating temperature (TBPmax) is 150 °C, as specified in Table 2 of the datasheet. Operation above this temperature risks accelerated degradation of the AlSiC baseplate bond and AlN substrate interfaces, potentially leading to delamination or thermal runaway under sustained load.
Does FF2000UXTR33T2M1 include body diodes, and what are their key ratings?
Yes, each MOSFET channel integrates a fast-recovery body diode rated for 750 A DC forward current at Tvj = 175 °C and VGS = −5 V. The typical forward voltage is 4.5 V at 175 °C, and reverse recovery energy is 56 mJ under those conditions, enabling efficient operation in hard- and soft-switching topologies.
How is the NTC thermistor calibrated, and what is its resistance tolerance?
The integrated NTC has a nominal resistance of 5 kΩ at 25 °C (R25) with ±5% deviation at 100 °C (ΔR/R), and B-values of 3433 K (B25/100). Calibration follows Infineon Application Note AN2022-05, requiring two-point measurement (25 °C and 100 °C) for accurate junction temperature reconstruction.
What gate drive voltage levels are recommended for reliable switching?
The datasheet specifies VGS(on) = +15 to +18 V and VGS(off) = −5 V. Using −5 V ensures robust noise immunity against Miller-induced turn-on during high-di/dt transitions, while +15 V minimizes RDS(on) without exceeding the 23 V transient gate-source voltage limit.
FF2000UXTR33T2M1BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Box
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss):
- 3300V (3.3kV)
- Current - Continuous Drain (Id) @ 25°C:
- 925A (Tc)
- Rds On (Max) @ Id, Vgs:
- 2.4mOhm @ 1kA, 15V
- Vgs(th) (Max) @ Id:
- 5.55V @ 900mA
- Gate Charge (Qg) (Max) @ Vgs:
- 5000nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 203000pF @ 1.8kV
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-XHP2K33
FF2000UXTR33T2M1BPSA1 FAQ
1.How can I place an order for FF2000UXTR33T2M1BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF2000UXTR33T2M1BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF2000UXTR33T2M1BPSA1 reliable?
The price and inventory of FF2000UXTR33T2M1BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF2000UXTR33T2M1BPSA1 is usually 5 days.
3.What payment methods are accepted for FF2000UXTR33T2M1BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF2000UXTR33T2M1BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF2000UXTR33T2M1BPSA1?
FF2000UXTR33T2M1BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF2000UXTR33T2M1BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF2000UXTR33T2M1BPSA1?
For technical support, including FF2000UXTR33T2M1BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF2000UXTR33T2M1BPSA1 requirements.
6.How does Aetrix verify that FF2000UXTR33T2M1BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF2000UXTR33T2M1BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF2000UXTR33T2M1BPSA1 meets industry standards.
7.What is the process for return or replacement of FF2000UXTR33T2M1BPSA1?
All FF2000UXTR33T2M1BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF2000UXTR33T2M1BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF2000UXTR33T2M1BPSA1 part is unused and in its original packaging.
Return procedure for FF2000UXTR33T2M1BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF2000UXTR33T2M1BPSA1 Tags
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