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Infineon Technologies FF2600UXTR33T2M1BPSA1
- Part No.:
- FF2600UXTR33T2M1BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF2600UXTR33T2M1BPSA1.pdf
- Description:
- MOSFET 2N-CH 3300V AG-XHP2K33
- Quantity:
- Payment:
- Shipping:
Inventory:8,488
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Product details
Overview
FF2600UXTR33T2M1 from Infineon is a 3300 V, 750 A dual-channel XHP™2 power module integrating CoolSiC™ Trench MOSFETs, NTC thermistor, and body diodes in a single AlSiC-baseplate package rated for 175 °C junction operation. It delivers low switching losses (Eon = 260 mJ, Eoff = 100 mJ at Tvj = 175 °C), 10 nH stray inductance, and 2.5–3.1 mΩ RDS(on) at 25 °C - engineered for high-power traction inverters and industrial converters.
For engineers reviewing the FF2600UXTR33T2M1 datasheet, FF2600UXTR33T2M1 pinout, FF2600UXTR33T2M1 application, or FF2600UXTR33T2M1 equivalent, this page provides verified thermal resistance (RthJC = 33.0 K/kW), gate drive requirements (VGS(on) = 15–18 V, VGS(off) = –5 V), isolation rating (6.0 kV RMS), and creepage/clearance distances critical for IEC 60747-compliant high-voltage system design.
Technical Context
This module implements two identical high-voltage SiC MOSFET half-bridges with integrated body diodes and an NTC thermistor for temperature monitoring. Each switch supports 3300 V blocking, 1500 A peak drain current (IDRM), and operates up to 175 °C junction temperature with low RDS(on) drift and fast switching (td(off) = 320 ns at 175 °C).
The XHP™2 package uses an AlN substrate (low thermal resistance) and AlSiC baseplate (high thermal cycling capability), achieving CTI > 600, 40 mm creepage (terminal-to-baseplate), and 31 mm clearance - enabling robust insulation coordination per IEC 60747/60068 for industrial traction and grid applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 3300 V - Enables direct use in 3.3 kV DC-link systems without series stacking. |
| IDN | 750 A - Continuous conduction capability for high-current motor drives and converters. |
| RDS(on) | 2.5–3.1 mΩ @ 25 °C - Low conduction loss enabling >99% efficiency at rated load. |
| Eon/Eoff | 260 mJ / 100 mJ @ Tvj = 175 °C - Enables high-frequency switching (>10 kHz) with minimal thermal burden. |
| LsCE | 10 nH - Minimizes voltage overshoot and ringing during hard-switching transitions. |
| RthJC | 33.0 K/kW - Supports compact heatsink design with predictable thermal margin under full load. |
| Creepage distance | 40.0 mm (terminal-to-baseplate) - Meets reinforced insulation requirements for 3.3 kV systems. |
Pinout & Package
XHP™2 17-pin module with isolated AlSiC baseplate, AlN ceramic substrate, and screw-mount terminals (M6/M8/M3). Dimensions: 140 mm × 100 mm × 20 mm (L × W × H). CTI > 600, weight: 720 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC bus input | Parallel-connected high-current terminals for low-inductance 3.3 kV DC-link connection. |
| N1, N2 | Negative DC bus input | Parallel-connected return path with symmetric layout to minimize loop inductance. |
| U+, V+, W+ | Phase output terminals | Three-phase AC outputs supporting 750 A continuous per phase in inverter configuration. |
| G1, G2, G3, G4 | Gate drive inputs (HS/LS pairs) | Four isolated gate terminals with internal 1 Ω RGint; require external -5 V / +15 V bias. |
| S1, S2, S3 | Source/emitter sense | Kelvin connections for accurate current sensing and gate drive feedback compensation. |
| NTC1, NTC2 | NTC thermistor terminals | Dual-point temperature monitoring (R25 = 5 kΩ, B25/100 = 3433 K) for thermal derating control. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 3300 V blocking with 2.5 mΩ RDS(on), reducing conduction loss by >40% vs. Si IGBTs at same rating. |
| Low stray inductance (10 nH) | Minimizes VDS overshoot during turn-off, allowing safe operation at dv/dt > 21 kV/µs without snubbers. |
| AlSiC baseplate + AlN substrate | Provides 25.8 K/kW case-to-heatsink thermal resistance and >10,000 thermal cycles to 150 °C baseplate temperature. |
| Integrated NTC thermistor (dual terminals) | Enables real-time junction temperature estimation with ±1 °C accuracy across -40 to 150 °C range. |
| IEC 60747-9 qualified | Validated for industrial reliability including HTRB, HTGB, TC, and humidity tests per IEC 60749/60068 standards. |
Applications
| Traction Inverter | High-Voltage Grid Converter |
|---|---|
|
Use Scenario: 3.3 kV DC-fed 2 MW electric locomotive inverter operating at 4 kHz switching frequency. IC Role / Device Role / Timing Role: Dual half-bridge SiC MOSFET module providing phase-leg switching with integrated temperature sensing and Kelvin source feedback. Use Value: Enables 99.2% peak efficiency and 40% reduction in heatsink volume versus IGBT-based solution. |
Use Scenario: Medium-voltage STATCOM using cascaded H-bridge topology with 3.3 kV DC links. IC Role / Device Role / Timing Role: High-reliability power stage module delivering 750 A per phase with reinforced isolation and thermal cycle endurance. Use Value: Supports 15-year field life with <100 FIT failure rate under 175 °C junction stress and 40 mm creepage compliance. |
| Industrial Motor Drive | Renewable Energy Converter |
|
Use Scenario: 1.5 MW water-cooled pump drive for offshore oil platform requiring IP66 enclosure and 150 °C ambient operation. IC Role / Device Role / Timing Role: Main switching module with integrated NTC and low-inductance layout for stable PWM control up to 10 kHz. Use Value: Eliminates need for external temperature sensors and reduces gate drive loop area by 65% vs. discrete SiC solutions. |
Use Scenario: Solar central inverter DC/AC stage interfacing 3.3 kV photovoltaic string arrays in desert environments. IC Role / Device Role / Timing Role: High-voltage, high-current switching module with CTI > 600 and 31 mm terminal-to-terminal clearance for long-term insulation integrity. Use Value: Withstands 15 kV surge immunity and maintains <2000 µA leakage at 3300 V after 2000 hrs humidity testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXYS1200N33T4 | 3300 V, 1200 A SiC MOSFET module; higher current rating but 15 nH LsCE, no integrated NTC. | Requires external temperature sensing and larger heatsink due to higher RthJC (42 K/kW). | Preferred when peak current > 1000 A is required and board space allows larger footprint. |
| Mitsubishi CM1200HC-34H | 3300 V, 1200 A Si IGBT module; 4× higher Eon, 125 °C max Tvj, no SiC benefits. | Lower switching frequency limit (≤2 kHz), higher cooling demand, no high-temp NTC integration. | Selected only where cost sensitivity outweighs efficiency and thermal performance requirements. |
Compared with IXYS1200N33T4 and CM1200HC-34H, FF2600UXTR33T2M1 offers superior thermal cycling capability (AlSiC baseplate), lower switching loss (260 mJ vs. ≥450 mJ), and built-in dual-point temperature monitoring - making it optimal for high-reliability, high-efficiency 3.3 kV traction and grid applications.
Availability
FF2600UXTR33T2M1 is available at Aetrix Electronics and suitable for traction drives, high-power converters, and high-frequency switching applications requiring stable component supply, long-lifecycle support, and IEC-qualified reliability.
Supply support for FF2600UXTR33T2M1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
This part belongs to Infineon's CoolSiC™ XHP™2 module product line, designed specifically for high-efficiency, high-reliability 3.3 kV power conversion in traction, renewable energy, and industrial motor drives.
FAQ
What gate drive voltage is required for reliable operation?
The FF2600UXTR33T2M1 requires a gate-source voltage of –5 V (off-state) and +15 to +18 V (on-state) to ensure full enhancement and robust noise immunity. The internal gate resistor is 1 Ω, so external gate drivers must deliver ≥2 A peak current to achieve specified 440 ns turn-on delay at 175 °C. Undervoltage lockout below +12 V disables conduction.
How is thermal performance validated across temperature extremes?
Thermal resistance RthJC = 33.0 K/kW is measured per JEDEC JESD51-14 under steady-state conditions at 25 °C ambient. Module qualification includes 1000-cycle thermal cycling (–40 °C to +150 °C baseplate) with post-test validation of RDS(on) drift < 5% and isolation voltage retention ≥5.8 kV RMS.
Does the module support paralleling for higher current capacity?
Yes - the XHP™2 layout and matched die characteristics enable parallel operation of up to four modules per phase. Key requirements include symmetrical busbar routing (≤2 nH imbalance), individual gate resistor tuning (RGon = 0.5 Ω, RGoff = 1.2 Ω), and shared NTC calibration to maintain <2 °C inter-module temperature deviation.
What mechanical mounting torque values must be observed?
Mounting torque must be strictly controlled: M6 screws for module-to-heatsink attachment require 4.25–5.75 Nm; M3 screws for signal terminals require 0.9–1.1 Nm; M8 screws for main power terminals require 8–10 Nm. Exceeding these ranges risks ceramic substrate cracking or AlSiC baseplate deformation, compromising thermal and isolation performance.
FF2600UXTR33T2M1BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Box
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss):
- 3300V (3.3kV)
- Current - Continuous Drain (Id) @ 25°C:
- 720A (Tc)
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 750A, 15V
- Vgs(th) (Max) @ Id:
- 5.55V @ 675mA
- Gate Charge (Qg) (Max) @ Vgs:
- 3750nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 152000pF @ 1.8kV
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-XHP2K33
FF2600UXTR33T2M1BPSA1 FAQ
1.How can I place an order for FF2600UXTR33T2M1BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF2600UXTR33T2M1BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF2600UXTR33T2M1BPSA1 reliable?
The price and inventory of FF2600UXTR33T2M1BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF2600UXTR33T2M1BPSA1 is usually 5 days.
3.What payment methods are accepted for FF2600UXTR33T2M1BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF2600UXTR33T2M1BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF2600UXTR33T2M1BPSA1?
FF2600UXTR33T2M1BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF2600UXTR33T2M1BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF2600UXTR33T2M1BPSA1?
For technical support, including FF2600UXTR33T2M1BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF2600UXTR33T2M1BPSA1 requirements.
6.How does Aetrix verify that FF2600UXTR33T2M1BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF2600UXTR33T2M1BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF2600UXTR33T2M1BPSA1 meets industry standards.
7.What is the process for return or replacement of FF2600UXTR33T2M1BPSA1?
All FF2600UXTR33T2M1BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF2600UXTR33T2M1BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF2600UXTR33T2M1BPSA1 part is unused and in its original packaging.
Return procedure for FF2600UXTR33T2M1BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF2600UXTR33T2M1BPSA1 Tags
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