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Infineon Technologies FF2MR12KM1HPHPSA1
- Part No.:
- FF2MR12KM1HPHPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF2MR12KM1HPHPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V AG-62MMHB
- Quantity:
- Payment:
- Shipping:
Inventory:8
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Product details
Overview
FF2MR12KM1HPHPSA1 from Infineon Technologies is a 1200 V, 500 A nominal 62 mm half-bridge power module integrating two CoolSiC™ Trench MOSFETs with integrated body diodes, optimized for high-frequency DC/DC converters and solar inverters operating up to 150 °C junction temperature. It delivers 2.94 mΩ typical RDS(on), 1.34 µC total gate charge, and 20 nH module stray inductance.
For engineers reviewing the FF2MR12KM1HPHPSA1 datasheet, FF2MR12KM1HPHPSA1 pinout, FF2MR12KM1HPHPSA1 application, or FF2MR12KM1HPHPSA1 equivalent, key selection criteria include verified 1000 A pulsed drain current, 4.0 kV isolation test voltage, low 0.083 K/W junction-to-case thermal resistance per switch, and gate drive compatibility with ±5 V / +15 V logic.
Technical Context
This module implements a dual-channel SiC MOSFET half-bridge topology with isolated copper baseplate and Al2O3 ceramic insulation (Class 1, IEC 61140), supporting bidirectional switching at up to 100 kHz in hard-switched topologies. Its 20 nH stray inductance and 0.465 mΩ terminal-to-chip lead resistance minimize voltage overshoot and conduction loss.
The device operates with gate threshold voltage of 4.50 V (typ.), requires -5 V / +15 V gate drive, and exhibits 22.9 mJ turn-off energy at 150 °C - enabling high-efficiency operation in UPS systems and medium-voltage solar string inverters where thermal management and switching loss reduction are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - blocking capability for 1000 V DC-link applications with 20% margin |
| ID nom | 500 A @ TC = 85 °C - continuous output current rating under standard heatsink conditions |
| RDS(on) | 2.94 mΩ @ Tvj = 25 °C - enables <1.5 W conduction loss per switch at 500 A |
| Eoff | 20.3 mJ @ Tvj = 150 °C - quantified turn-off loss for 600 V, 500 A hard-switching |
| RthJC | 0.083 K/W per MOSFET - supports high-power density thermal design with minimal junction rise |
| VISOL | 4.0 kV RMS @ 50 Hz, 1 min - certified basic insulation for industrial safety compliance |
| LsCE | 20 nH - low stray inductance reduces voltage spike during di/dt > 7.8 kA/µs |
Pinout & Package
FF2MR12KM1HPHPSA1 uses a standardized 62 mm C-Series industrial power module package with isolated copper baseplate, Al2O3 dielectric, and M6 screw terminals. Dimensions and creepage/clearance meet IEC 61140 Class 1 requirements (29.0 mm creepage terminal-to-heatsink).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1 | High-side source / Phase output | Common source node for upper MOSFET and lower MOSFET body diode anode |
| N1 | Low-side source / Phase output | Common source node for lower MOSFET and upper MOSFET body diode anode |
| P2 | High-side drain / DC+ input | Direct connection to positive DC bus; rated for 1200 V blocking |
| N2 | Low-side drain / DC– input | Direct connection to negative DC bus; referenced to system ground |
| G1 | High-side gate | Isolated gate terminal for upper switch; requires -5 V / +15 V drive |
| G2 | Low-side gate | Isolated gate terminal for lower switch; independent drive path required |
| S1 | High-side source sense | Kelvin source connection for accurate high-side current sensing and gate control |
| S2 | Low-side source sense | Kelvin source connection for precise low-side current feedback and gate loop stability |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V rating with 2.94 mΩ RDS(on) and 1.34 µC QG, reducing both conduction and switching losses vs. planar SiC |
| Integrated Kelvin source terminals (S1/S2) | Supports accurate gate-source voltage regulation and minimizes gate loop inductance for stable high-dv/dt operation |
| 4.0 kV isolation test voltage | Validated basic insulation barrier compliant with industrial safety standards for 1000 V DC systems |
| 0.020 K/W case-to-heatsink thermal resistance | Optimized for low-thermal-resistance TIM interface, enabling compact heatsink designs at 500 A continuous load |
| Body diode forward voltage ≤ 4.35 V @ 500 A | Reduces freewheeling loss in hard-switched ZVS/ZCS topologies compared to discrete SiC diode solutions |
Applications
| Solar String Inverter | Industrial UPS System |
|---|---|
|
Use Scenario: Three-phase 1500 V DC-input solar string inverter with interleaved DC/DC stage feeding a 3L-NPC inverter. IC Role / Device Role / Timing Role: Half-bridge switching cell in isolated DC/DC converter stage, operating at 50–100 kHz with synchronous rectification. Use Value: 20 nH stray inductance and 22.9 mJ Eoff at 150 °C enable >99% peak efficiency while maintaining <100 °C heatsink temperature at 25 kW per module. |
Use Scenario: Online double-conversion UPS delivering clean 400 V AC output from 750 V DC battery bank during grid outage. IC Role / Device Role / Timing Role: High-side/low-side switch pair in bidirectional buck-boost DC/DC stage regulating battery voltage to inverter DC-link. Use Value: 1000 A pulsed current rating and 0.083 K/W RthJC support 300 ms overload capability without derating, meeting IEC 62040-3 transient response requirements. |
| High-Frequency EV Charger | Medium-Voltage Motor Drive |
|
Use Scenario: 22 kW on-board charger using CLLC resonant topology with primary-side SiC half-bridge. IC Role / Device Role / Timing Role: Primary-side switching module in resonant tank circuit, driven at variable frequency between 100–300 kHz. Use Value: Low Ciss (39.7 nF) and Crss (0.302 nF) reduce capacitive losses and improve zero-voltage switching margin across full load range. |
Use Scenario: 400 kW traction inverter for rail propulsion system using multi-level NPC topology with 1200 V DC-link. IC Role / Device Role / Timing Role: Active clamping and phase-leg switching element in three-level configuration requiring robust short-circuit ruggedness. Use Value: Verified RBSOA up to 1200 V and 1000 A with 24.1 ns td(off) at 150 °C ensures reliable fault clearing within 2 µs under IEC 61800-5-1 motor drive fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed CMI2F12070D | 1200 V / 700 A, higher current rating but 3.5 mΩ RDS(on); no Kelvin source pins | Requires external current sensing; less suitable for high-precision gate control in resonant topologies | Preferred when higher continuous current is prioritized over gate-loop stability and low-loss switching |
| ROHM BSM200D12P2E201 | 1200 V / 200 A, smaller 34 mm footprint; 4.2 mΩ RDS(on); 6.5 kV isolation | Lower power density; limited to ≤15 kW per module; better suited for space-constrained auxiliary supplies | Select when board area is constrained and thermal budget allows higher conduction loss |
Compared with CMI2F12070D and BSM200D12P2E201, FF2MR12KM1HPHPSA1 uniquely balances 500 A current handling, 2.94 mΩ conduction loss, Kelvin sensing, and 20 nH stray inductance - making it optimal for high-efficiency, high-reliability 15–30 kW DC/DC stages where gate control fidelity and thermal headroom are critical.
Availability
FF2MR12KM1HPHPSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and high-frequency EV chargers requiring stable component supply across multi-year production cycles.
Supply support for FF2MR12KM1HPHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to Infineon's CoolSiC™ 62 mm module product line, engineered specifically for high-efficiency, high-power-density medium-voltage power conversion in solar, UPS, and traction applications demanding >99% efficiency and 150 °C operation.
FAQ
What gate drive voltage is required for reliable operation?
FF2MR12KM1HPHPSA1 requires a gate drive of –5 V (turn-off) and +15 V (turn-on) referenced to its respective source terminal. The gate threshold voltage is 4.50 V (typ.), and applying <13 V risks incomplete turn-on at high temperature. Gate drive must use Kelvin source connections (S1/S2) to maintain stable VGS under high di/dt.
Does this module include internal anti-parallel diodes?
Yes - each SiC MOSFET integrates a monolithic body diode with 4.35 V forward voltage at 500 A and 125 °C. These diodes are rated for 160 A DC body diode forward current at TC = 85 °C and support bidirectional conduction in bridge configurations without external diodes.
What is the maximum allowable mounting torque for electrical terminals?
The specified terminal connection torque for M6 screws is 2.5–5.0 Nm. Exceeding 5.0 Nm risks damaging the aluminum terminal pad or compromising solder joint integrity. Mounting must follow Infineon Application Note AN2018-09 for consistent contact resistance and thermal performance.
How is isolation validated for long-term reliability?
Isolation is certified to 4.0 kV RMS at 50 Hz for 1 minute using Al2O3 ceramic (basic insulation, IEC 61140 Class 1). CTI > 400 and RTI Elec. 140 °C confirm material suitability for humid industrial environments; creepage (29.0 mm) and clearance (23.0 mm) meet reinforced insulation requirements for 1000 V DC systems.
FF2MR12KM1HPHPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 500A (Tc)
- Rds On (Max) @ Id, Vgs:
- 2.13mOhm @ 500A, 15V
- Vgs(th) (Max) @ Id:
- 5.15V @ 224mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1340nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 39700pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-62MMHB
FF2MR12KM1HPHPSA1 FAQ
1.How can I place an order for FF2MR12KM1HPHPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF2MR12KM1HPHPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF2MR12KM1HPHPSA1 reliable?
The price and inventory of FF2MR12KM1HPHPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF2MR12KM1HPHPSA1 is usually 5 days.
3.What payment methods are accepted for FF2MR12KM1HPHPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF2MR12KM1HPHPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF2MR12KM1HPHPSA1?
FF2MR12KM1HPHPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF2MR12KM1HPHPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF2MR12KM1HPHPSA1?
For technical support, including FF2MR12KM1HPHPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF2MR12KM1HPHPSA1 requirements.
6.How does Aetrix verify that FF2MR12KM1HPHPSA1 is sourced from the original manufacturer or authorized distributors?
All FF2MR12KM1HPHPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF2MR12KM1HPHPSA1 meets industry standards.
7.What is the process for return or replacement of FF2MR12KM1HPHPSA1?
All FF2MR12KM1HPHPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF2MR12KM1HPHPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF2MR12KM1HPHPSA1 part is unused and in its original packaging.
Return procedure for FF2MR12KM1HPHPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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