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Infineon Technologies FF33MR12W1M1HB11BPSA1
- Part No.:
- FF33MR12W1M1HB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
FF33MR12W1M1HB11BPSA1.pdf
- Description:
- MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:23
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Product details
Overview
FF33MR12W1M1HB11BPSA1 from Infineon is a 1200 V, 25 A dual-channel SiC MOSFET power module in EasyDUAL™ 2L package with integrated NTC thermistor and PressFIT terminals. It integrates two CoolSiC™ Trench MOSFETs with body diodes, rated for 50 A repetitive peak drain current and 1.54 K/W junction-to-heatsink thermal resistance, enabling high-efficiency motor drives and industrial DC/DC converters.
For engineers reviewing the FF33MR12W1M1HB11BPSA1 datasheet, FF33MR12W1M1HB11BPSA1 pinout, FF33MR12W1M1HB11BPSA1 application, or FF33MR12W1M1HB11BPSA1 equivalent, this module delivers low switching losses (Eon = 0.471 mJ, Eoff = 0.127 mJ at Tvj = 175 °C), 18 nH stray inductance, and -40 to 175 °C operating temperature range - critical for high-frequency, high-reliability industrial power conversion.
Technical Context
This EasyDUAL™ module implements a half-bridge topology with two discrete CoolSiC™ Trench MOSFETs sharing common source terminals and isolated gate inputs. Each channel supports ±10/23 V transient gate voltage and operates with recommended VGS(on) = 15–18 V and VGS(off) = –5 to 0 V for robust turn-on/turn-off control under high dv/dt conditions.
The integrated NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) enables real-time die temperature monitoring, while the low-inductive layout (LsCE = 18 nH) and PressFIT contact technology reduce parasitic oscillation and mounting complexity in high-power inverters and UPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Withstands DC bus voltages up to 1200 V in industrial DC-link applications. |
| IDN / IDRM | 25 A continuous / 50 A peak - Supports sustained 25 A RMS output with short-term overload capability. |
| RDS(on) | 32.3 mΩ @ 25 °C - Enables low conduction loss at rated current and ambient temperature. |
| Eon / Eoff | 0.471 mJ / 0.127 mJ @ Tvj = 175 °C - Minimizes switching energy loss in high-frequency PWM operation. |
| LsCE | 18 nH - Reduces voltage overshoot and ringing during fast switching transitions. |
| RthJH | 1.54 K/W per MOSFET - Ensures effective thermal transfer to heatsink under λgrease = 1 W/(m·K). |
| NTC R25 | 5 kΩ ±5% @ 25 °C - Provides calibrated temperature sensing for closed-loop thermal protection. |
Pinout & Package
FF33MR12W1M1HB11BPSA1 uses the EasyDUAL™ 2L package (120 mm × 62.5 mm × 17 mm), featuring PressFIT solderless terminals and integrated mounting clamps for mechanical ruggedness and low-contact-resistance interconnection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC-link input | Dual parallel terminals for low-inductance, high-current connection to +VDC bus. |
| N1, N2 | Negative DC-link input / common source | Dual parallel terminals serving as return path and shared source node for both MOSFETs. |
| U, V | Phase outputs (half-bridge legs) | Output terminals connecting to motor windings or transformer primary in inverter/DC-DC topologies. |
| G1, G2 | Gate inputs (MOSFET 1 & 2) | Isolated gate drive connections supporting independent control of each switch leg. |
| S1, S2 | Source sense (Kelvin) | Low-current Kelvin sense paths for accurate gate-source voltage regulation and current feedback. |
| T1, T2 | NTC thermistor terminals | Two-wire interface for external temperature measurement circuitry using integrated NTC. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V blocking with 32.3 mΩ RDS(on), reducing conduction loss vs. planar SiC or Si IGBTs. |
| PressFIT contact system | Eliminates soldering requirements and ensures repeatable, low-resistance interconnect under thermal cycling. |
| Integrated NTC thermistor | Provides direct die-temperature feedback with 5 kΩ R25 and tight B-value tolerance (±5%) for accurate thermal management. |
| Low stray inductance (18 nH) | Minimizes voltage overshoot and EMI generation during 1.88 kA/µs di/dt switching events. |
| Industrial qualification (IEC 60747/60749/60068) | Validated for long-term reliability in harsh environments including vibration, humidity, and thermal shock. |
Applications
| Motor Drives | Industrial DC/DC Converters |
|---|---|
Use Scenario: Three-phase inverter stage in servo and variable-frequency drives for industrial pumps and compressors. IC Role / Device Role / Timing Role: Dual-channel half-bridge power stage delivering precise PWM-controlled AC output with <18 nH loop inductance. Use Value: Enables >20 kHz switching frequency without excessive loss, improving torque response and reducing filter size. | Use Scenario: Isolated bidirectional DC/DC stage in energy storage systems and EV charging infrastructure. IC Role / Device Role / Timing Role: High-voltage, high-efficiency power switch in dual-active-bridge (DAB) topology with soft-switching capability. Use Value: Achieves >98% peak efficiency at 25 A due to low RDS(on) and sub-0.5 mJ total switching energy per pulse. |
| Uninterruptible Power Supplies | High-Frequency Inverters |
Use Scenario: Online double-conversion UPS where fast dynamic response and high reliability are mandatory. IC Role / Device Role / Timing Role: Output inverter stage converting battery DC to clean 50/60 Hz AC with active harmonic suppression. Use Value: Supports seamless transfer and overload handling up to 50 A peak with 175 °C junction rating and integrated thermal sensing. | Use Scenario: Resonant LLC or phase-shifted full-bridge inverter in high-density SMPS for telecom and data centers. IC Role / Device Role / Timing Role: Primary-side switching element operating at 100–500 kHz with minimal switching loss and EMI. Use Value: Delivers stable performance across -40 to 125 °C ambient with <37 ns turn-on delay and <17 ns fall time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF300R12ME4_B11 | 1200 V / 300 A single-channel module; larger footprint, higher current rating, no integrated NTC. | Targeted at high-power traction inverters rather than compact industrial drives or DC/DC stages. | Select when >100 A continuous current is required and board space allows larger module; omit if NTC-based thermal monitoring is mandatory. |
| FS250R12A1T4_B11 | 1200 V / 250 A dual-channel SiC module with integrated driver interface; higher current, different pinout, no PressFIT. | Designed for plug-in gate driver compatibility and automotive-grade validation, not industrial PressFIT mounting. | Choose for designs requiring integrated driver coupling and AEC-Q101 compliance; avoid if mechanical mounting must use PressFIT clamps. |
Compared with FF300R12ME4_B11 and FS250R12A1T4_B11, FF33MR12W1M1HB11BPSA1 offers optimal balance of compact size, integrated NTC, PressFIT ease-of-use, and 25 A rating - making it uniquely suited for space-constrained, thermally monitored industrial power modules.
Availability
FF33MR12W1M1HB11BPSA1 is available at Aetrix Electronics and suitable for motor drives, industrial DC/DC converters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and qualified SiC performance.
Supply support for FF33MR12W1M1HB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to the CoolSiC™ EasyDUAL™ product line, engineered for high-efficiency, high-reliability power conversion in industrial motor drives, UPS, and DC/DC applications where low-loss SiC switching and robust packaging are essential.
FAQ
What gate drive voltage is recommended for reliable operation?
Infineon specifies VGS(on) = 15–18 V and VGS(off) = –5 to 0 V for FF33MR12W1M1HB11BPSA1. Using 15 V minimizes RDS(on) drift while avoiding excessive gate oxide stress; –5 V ensures fast, noise-immune turn-off and suppresses spurious conduction during high dv/dt transients.
Does this module include anti-parallel diodes?
Yes - each MOSFET channel integrates a monolithic SiC body diode rated for 10 A DC forward current at Tvj = 175 °C and VGS = –3 V. The typical forward voltage is 3.8 V at 25 A and 175 °C, enabling efficient freewheeling without external diodes in hard-switched topologies.
How is thermal monitoring implemented?
The module embeds an NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) with dedicated T1/T2 terminals. Its resistance varies predictably with junction temperature, allowing external circuitry to derive real-time die temperature with ±1.5 °C accuracy when calibrated per Infineon Application Note AN2021-13.
What mechanical mounting method does this module use?
FF33MR12W1M1HB11BPSA1 employs integrated mounting clamps and PressFIT terminals - no soldering or screw-tightening is required. Clamps apply 20–50 N force per side to ensure low-contact-resistance interconnection and mechanical stability under thermal cycling and vibration per IEC 60068 standards.
FF33MR12W1M1HB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FF33MR12W1M1HB11BPSA1 FAQ
1.How can I place an order for FF33MR12W1M1HB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF33MR12W1M1HB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF33MR12W1M1HB11BPSA1 reliable?
The price and inventory of FF33MR12W1M1HB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF33MR12W1M1HB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF33MR12W1M1HB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF33MR12W1M1HB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF33MR12W1M1HB11BPSA1?
FF33MR12W1M1HB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF33MR12W1M1HB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF33MR12W1M1HB11BPSA1?
For technical support, including FF33MR12W1M1HB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF33MR12W1M1HB11BPSA1 requirements.
6.How does Aetrix verify that FF33MR12W1M1HB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF33MR12W1M1HB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF33MR12W1M1HB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF33MR12W1M1HB11BPSA1?
All FF33MR12W1M1HB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF33MR12W1M1HB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF33MR12W1M1HB11BPSA1 part is unused and in its original packaging.
Return procedure for FF33MR12W1M1HB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF33MR12W1M1HB11BPSA1 Tags
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
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