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Infineon Technologies FF33MR12W1M1HPB11BPSA1
- Part No.:
- FF33MR12W1M1HPB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
FF33MR12W1M1HPB11BPSA1.pdf
- Description:
- MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:30
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Product details
Overview
FF33MR12W1M1HPB11BPSA1 from Infineon is a 1200 V, 25 A dual-channel SiC MOSFET power module in EasyDUAL™ 2L package with integrated NTC thermistor and pre-applied thermal interface material (TIM), designed for high-efficiency, high-frequency switching in industrial DC/DC converters and motor drives.
For engineers reviewing the FF33MR12W1M1HPB11BPSA1 datasheet, FF33MR12W1M1HPB11BPSA1 pinout, FF33MR12W1M1HPB11BPSA1 application, or FF33MR12W1M1HPB11BPSA1 equivalent, key selection criteria include its 32.3 mΩ RDS(on) at 25 °C, 18 nH stray inductance, 1.56 K/W junction-to-heatsink thermal resistance with TIM, and PressFIT-compatible mounting for reliable thermal-mechanical performance in UPS and traction inverters.
Technical Context
This module integrates two CoolSiC™ Trench MOSFETs in a half-bridge configuration with independent source terminals, enabling discrete gate drive and optimized commutation. Its low-inductive layout and symmetric current paths minimize voltage overshoot and EMI during hard-switching at >50 kHz.
The integrated NTC (5 kΩ @ 25 °C, B25/100 = 3433 K) provides real-time die temperature monitoring, while the pre-applied TIM ensures consistent thermal coupling between baseplate and heatsink without manual dispensing or curing steps.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports 800 V DC bus systems with 50 % voltage margin for transient overvoltage handling |
| IDN | 25 A RMS - rated continuous output current per switch under 85 °C heatsink temperature |
| RDS(on) | 32.3 mΩ @ 25 °C - enables <1.2 W conduction loss per MOSFET at 25 A, reducing thermal load |
| LsCE | 18 nH - ultra-low stray inductance minimizes voltage spikes and gate oscillation during turn-off |
| RthJH | 1.56 K/W - thermal resistance measured with IFX TIM, enabling 175 °C max junction operation at 25 A |
| NTC R25 | 5 kΩ ±5 % - calibrated resistance at 25 °C for accurate temperature feedback in closed-loop thermal management |
| Eoff | 0.117 mJ @ 25 °C - low turn-off energy reduces switching losses in high-frequency PWM applications |
Pinout & Package
FF33MR12W1M1HPB11BPSA1 uses the EasyDUAL™ 2L package (109.5 × 47.5 × 17 mm), featuring PressFIT-compatible power and signal terminals, integrated mounting clamps, and a ceramic Al2O3 baseplate for 3.0 kV isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC bus input | Parallel-connected high-current inputs for symmetrical current sharing and reduced contact resistance |
| N1, N2 | Negative DC bus return | Dual low-inductance return paths to minimize loop area and common-mode noise |
| U, V | Phase output terminals | Separated outputs for half-bridge leg connection to motor winding or transformer primary |
| S1, S2 | Source terminals (MOSFET) | Independent source pins enable Kelvin sensing and separate gate drive return paths |
| G1, G2 | Gate terminals | Isolated gate inputs with internal 8.2 Ω gate resistor support direct microcontroller drive |
| T1, T2 | NTC thermistor terminals | Two-wire NTC interface with 5 kΩ nominal resistance for analog temperature readout |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V blocking with 32.3 mΩ RDS(on), reducing conduction loss by ~40 % vs. comparable Si IGBTs |
| Pre-applied TIM layer | Eliminates manual thermal paste application, ensuring repeatable 1.56 K/W RthJH and avoiding air gaps or pump-out failure |
| PressFIT-compatible terminals | Enables solderless, high-reliability interconnection with <0.5 mΩ contact resistance and vibration-resistant mechanical retention |
| Integrated NTC thermistor | Provides direct die-temperature feedback with ±1.5 °C accuracy across -40 to 125 °C range for thermal derating control |
| Low-inductive 2L layout | 18 nH stray inductance allows safe operation up to 100 kHz switching without snubbers or gate damping |
Applications
| Industrial DC/DC Converter | Three-Phase Motor Drive |
|---|---|
Use Scenario: 800 V to 48 V isolated bi-directional DC/DC converter in energy storage systems. IC Role / Device Role / Timing Role: Dual-channel SiC MOSFET half-bridge switching device operating at 100 kHz with synchronous rectification. Use Value: Achieves >98.5 % peak efficiency due to low RDS(on) and Eoff, reducing cooling requirements and system size. | Use Scenario: 15 kW servo drive for CNC machine spindle control with field-oriented control. IC Role / Device Role / Timing Role: Power stage half-bridge module per phase, driven by isolated gate drivers with 37 ns td,on. Use Value: Enables 20 kHz PWM with minimal dv/dt-induced EMI and gate oscillation thanks to 18 nH LsCE. |
| Uninterruptible Power Supply | Traction Inverter Submodule |
Use Scenario: Online double-conversion UPS with 400 V AC input rectified to 800 V DC bus. IC Role / Device Role / Timing Role: Inverter-stage switching element in three-level NPC topology with active neutral-point clamping. Use Value: Supports 175 °C junction operation during overload conditions, extending hold-up time without derating. | Use Scenario: Auxiliary traction inverter for battery-electric bus auxiliary power unit (APU). IC Role / Device Role / Timing Role: Half-bridge power module driving 400 V induction motor with integrated NTC-based thermal foldback. Use Value: Real-time die temperature monitoring via NTC enables dynamic current limiting before thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS800R07A2E3_B11 | 750 V Si IGBT module, higher conduction loss (1.8 V VCE(sat)), no integrated NTC | Lower voltage rating limits use to 600 V DC bus; requires external temperature sensing | Select only if cost sensitivity outweighs efficiency and thermal monitoring needs |
| FF6MR12W2M1_B11 | 1200 V SiC module, 6 mΩ RDS(on), 30 A rating, larger EasyPIM™ package | Higher current capability but requires larger heatsink and PCB footprint; no pre-applied TIM | Choose when >25 A RMS output or lower RDS(on) is required, accepting increased board space |
Compared with FS800R07A2E3_B11 and FF6MR12W2M1_B11, FF33MR12W1M1HPB11BPSA1 delivers optimal balance of 1200 V capability, 25 A rating, integrated thermal sensing, and compact EasyDUAL™ form factor for space-constrained industrial converters.
Availability
FF33MR12W1M1HPB11BPSA1 is available at Aetrix Electronics and suitable for industrial DC/DC converters, motor drives, and UPS systems requiring stable component supply, long-term lifecycle support, and qualified reliability per IEC 60747/60749/60068 standards.
Supply support for FF33MR12W1M1HPB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to the CoolSiC™ EasyDUAL™ product line, engineered for high-efficiency, high-power-density power conversion in industrial motor drives and energy infrastructure where SiC's high-speed switching and low-loss characteristics deliver measurable system-level gains.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The FF33MR12W1M1HPB11BPSA1 is rated for continuous operation up to 175 °C junction temperature, validated per IEC 60747. Operation above 150 °C is permitted only under defined overload conditions for limited durations, as specified in Application Note AN 2021-13. Thermal design must ensure RthJH ≤ 1.56 K/W using the pre-applied TIM.
Does this module require external gate resistors for standard gate driver ICs?
No external gate resistors are required for typical isolated gate drivers (e.g., 1ED34xx, 2EDF7275K), as each MOSFET includes an internal 8.2 Ω gate resistor. This value supports stable 37 ns turn-on delay and 58 ns turn-off delay with 8.2 Ω RGon and 4.7 Ω RGoff drive configurations, minimizing risk of oscillation or shoot-through.
How is the NTC thermistor calibrated, and what tolerance applies across temperature?
The integrated NTC has a nominal resistance of 5 kΩ at 25 °C with ±5 % tolerance, and B-values of 3433 K (25/100 °C). Calibration follows IEC 60539-1, enabling ±1.5 °C temperature measurement accuracy from –40 to +125 °C when used with a precision 10 µA bias current and 16-bit ADC.
Can the PressFIT terminals be reworked or replaced after initial assembly?
PressFIT terminals are designed for single-use, high-reliability insertion into plated-through holes with controlled force (20–50 N per clamp). Rework is not recommended: removal damages the terminal plating and compromises contact resistance (<0.5 mΩ spec) and thermal cycling endurance. Replacement requires full module replacement per Infineon's assembly guidelines.
FF33MR12W1M1HPB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FF33MR12W1M1HPB11BPSA1 FAQ
1.How can I place an order for FF33MR12W1M1HPB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF33MR12W1M1HPB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF33MR12W1M1HPB11BPSA1 reliable?
The price and inventory of FF33MR12W1M1HPB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF33MR12W1M1HPB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF33MR12W1M1HPB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF33MR12W1M1HPB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF33MR12W1M1HPB11BPSA1?
FF33MR12W1M1HPB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF33MR12W1M1HPB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF33MR12W1M1HPB11BPSA1?
For technical support, including FF33MR12W1M1HPB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF33MR12W1M1HPB11BPSA1 requirements.
6.How does Aetrix verify that FF33MR12W1M1HPB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF33MR12W1M1HPB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF33MR12W1M1HPB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF33MR12W1M1HPB11BPSA1?
All FF33MR12W1M1HPB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF33MR12W1M1HPB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF33MR12W1M1HPB11BPSA1 part is unused and in its original packaging.
Return procedure for FF33MR12W1M1HPB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF33MR12W1M1HPB11BPSA1 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
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