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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies FF4000UXTR33T2M1BPSA1

Name: FF4000UXTR33T2M1BPSA1
Brand: Infineon Technologies
SKU: FF4000UXTR33T2M1BPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FF4000UXTR33T2M1BPSA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: Module

Datasheet:: FF4000UXTR33T2M1BPSA1.pdf

Description:: XHP HV

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Product details

Overview

FF4000UXTR33T2M1 from Infineon is a 3300 V, 500 A dual-channel SiC MOSFET power module in XHP™2 package, integrating two CoolSiC™ Trench MOSFETs with integrated NTC thermistors and low-inductance layout. It operates up to 175 °C junction temperature, delivers 4.8 mΩ typical R_DS(on) at 25 °C, and targets high-efficiency traction inverters and industrial medium-voltage converters.

For engineers reviewing the FF4000UXTR33T2M1 datasheet, FF4000UXTR33T2M1 pinout, FF4000UXTR33T2M1 application, or FF4000UXTR33T2M1 equivalent, key selection criteria include its 3300 V blocking capability, 1000 A peak repetitive drain current, 10 nH stray inductance, AlSiC baseplate thermal cycling robustness, and qualified industrial validation per IEC 60747/60749/60068.

Technical Context

This module implements a dual half-bridge topology with isolated gate drive inputs for each MOSFET channel, supporting independent control of high-side and low-side switches. Its low 10 nH stray inductance and 0.43 mΩ terminal-to-chip resistance minimize switching voltage overshoot and conduction loss under high di/dt conditions.

The integrated NTC thermistor (R₂₅ = 5 kΩ, B_25/100 = 3433 K) enables real-time junction temperature monitoring, while the AlN substrate (low thermal resistance) and AlSiC baseplate (CTI > 600, 40 mm creepage) ensure reliable operation in harsh industrial environments with high isolation requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
VDSS	3300 V - Enables use in 1.5–2.0 kV DC-link systems (e.g., rail traction, HVDC converters) without series stacking.
IDN / IDRM	500 A continuous / 1000 A peak - Supports high-power motor drives with short-term overload capability up to 2× rated current.
RDS(on) typ.	4.8 mΩ @ 25 °C - Delivers <1.2 kW conduction loss at 500 A, critical for >99% system efficiency in 3 MW-class inverters.
Tvj,op max	175 °C - Allows derating-free operation at elevated ambient temperatures in enclosed converter cabinets.
LsCE	10 nH - Reduces voltage spike during turn-off, enabling faster switching (dv/dt > 23 kV/µs) without snubbers.
RthJC	41.4 K/kW per MOSFET - Enables direct thermal coupling to liquid-cooled heat sinks with predictable junction-to-case temperature rise.
Creepage dCreep	40.0 mm (terminal-to-baseplate) - Meets reinforced insulation requirements for 3.3 kV AC systems per IEC 61800-5-1.

Pinout & Package

XHP™2 package: 17-pin, double-sided cooling, AlSiC baseplate, AlN ceramic substrate, CTI > 600, weight 720 g. Designed for press-fit or screw-mount (M6, 4.25–5.75 Nm) onto liquid-cooled cold plates.

Pin/Terminal	Circuit Role	Design Meaning
P1, P2	High-side source / Low-side source	Common source nodes for dual half-bridge; electrically isolated from baseplate for floating gate drive reference.
N1, N2	High-side drain / Low-side drain	DC-link positive and negative terminals; designed for parallel busbar connection with minimal loop inductance.
U+, U−, V+, V−, W+, W−	Phase output terminals	Three-phase AC output pins; symmetric layout minimizes current imbalance and thermal gradient across module.
G1H, G1L, G2H, G2L	Gate drive inputs (high/low side ×2)	Isolated gate terminals accepting ±5 V / +15 V logic; internal 1.5 Ω gate resistor limits peak gate current.
NTC1, NTC2	NTC thermistor terminals	Dual NTC outputs (shared R₂₅ = 5 kΩ) enable redundant temperature sensing per switch leg.
PE	Protective earth connection	Baseplate grounding point; ensures safe fault-current path and EMI shielding continuity.

Key Features

Feature	Design Value
CoolSiC™ Trench MOSFET technology	Enables 3300 V blocking with 4.8 mΩ R_DS(on), reducing conduction loss by ~40% vs. comparable Si IGBT modules.
Low-inductive XHP™2 layout	10 nH total stray inductance allows 23 kV/µs dv/dt without external snubbers, enabling 20–50 kHz switching in traction drives.
AlN substrate + AlSiC baseplate	Thermal resistance R_th,CH = 24.9 K/kW with λ_grease = 1 W/(m·K), supporting >10,000 thermal cycles in EV inverter applications.
Integrated dual NTC thermistors	5 kΩ @ 25 °C with ±5% R₁₀₀ tolerance enables accurate real-time junction temperature estimation within ±2 °C error band.
Industrial qualification	Tested per IEC 60747 (semiconductor devices), IEC 60749 (discrete reliability), and IEC 60068 (environmental stress), confirming suitability for 20+ year field life.

Applications

Traction Inverters

High-Power Industrial Converters

Use Scenario: Main propulsion inverter for 3.3 kV DC-fed railway locomotives and metro trains.

IC Role / Device Role / Timing Role: Dual half-bridge SiC MOSFET module switching 500 A phase current at 4–8 kHz with precise dead-time control.

Use Value: Enables >98.5% inverter efficiency and 30% reduction in heatsink volume versus IGBT-based designs.

Use Scenario: Grid-tied 3.3 kV medium-voltage active front-end rectifier for wind turbine converters.

IC Role / Device Role / Timing Role: High-voltage bidirectional switching element in three-level NPC topology operating at 10–15 kHz.

Use Value: Eliminates need for dynamic voltage sharing circuits due to matched R_DS(on) and SOA across temperature.

High-Frequency UPS Systems

Marine Propulsion Drives

Use Scenario: 1.5 MVA double-conversion UPS with fast transient response and zero-transfer time.

IC Role / Device Role / Timing Role: Output inverter stage delivering clean 60 Hz sine wave using space-vector PWM at 20 kHz switching frequency.

Use Value: 10 nH stray inductance suppresses EMI emissions below CISPR 11 Class A limits without added filtering.

Use Scenario: Podded azimuth thruster drive for offshore support vessels requiring salt-mist and vibration resilience.

IC Role / Device Role / Timing Role: Power stage in vector-controlled permanent magnet motor drive operating continuously at 175 °C junction temperature.

Use Value: AlSiC baseplate withstands >100,000 thermal cycles between −40 °C and 150 °C ambient, meeting DNV GL marine certification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXFN120N33X3	Single 3300 V, 120 A discrete SiC MOSFET; no integrated NTC or dual-channel layout.	Suitable only for custom multichip half-bridge assembly; requires external gate driver isolation and thermal sensing.	Select when board-level integration and thermal monitoring are handled externally; not drop-in replaceable.
Mitsubishi CM600DX-24S	3300 V, 600 A Si IGBT module with co-packaged diode; higher V_CE(sat) (2.7 V) and slower switching (E_off ≈ 220 mJ).	Valid for legacy 2–4 kHz designs where efficiency and size are secondary to cost and design familiarity.	Select only if existing gate drive infrastructure supports ±15 V IGBT bias and thermal management accommodates higher losses.

Compared with IXFN120N33X3 and CM600DX-24S, FF4000UXTR33T2M1 provides integrated dual-channel switching, on-module temperature sensing, and 60% lower switching energy-enabling compact, high-efficiency 10–50 kHz systems without redesigning gate drive or thermal architecture.

Availability

FF4000UXTR33T2M1 is available at Aetrix Electronics and suitable for traction inverters, high-power industrial converters, high-frequency UPS systems, and marine propulsion drives requiring stable component supply and long-term lifecycle assurance.

Supply support for FF4000UXTR33T2M1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global R&D and manufacturing facilities.

This part belongs to Infineon's CoolSiC™ XHP™2 module product line, engineered specifically for high-reliability, high-efficiency medium-voltage power conversion in rail, energy, and industrial automation systems.

FAQ

What gate drive voltage is required for reliable operation?

The FF4000UXTR33T2M1 requires +15 V to +18 V for turn-on and −5 V for turn-off, per Infineon's recommended values. Using +15 V ensures full enhancement with 4.8 mΩ R_DS(on), while −5 V guarantees robust noise immunity and prevents spurious turn-on during high dv/dt transients. Gate drive must deliver ≥2 A peak current to charge the 2.5 µC total gate charge within nanosecond timing windows.

Does this module include body diodes, and what is their performance?

Yes-it integrates intrinsic SiC body diodes in each MOSFET channel, rated for 500 A DC forward current at 175 °C and 4.5 V typical forward voltage at that temperature. Reverse recovery energy is 40 mJ at 175 °C, significantly lower than silicon diodes, enabling hard-switched topologies without commutation snubbers in high-frequency applications.

How is thermal performance validated, and what is the maximum baseplate temperature?

Thermal resistance is specified as R_th,JC = 41.4 K/kW per MOSFET and R_th,CH = 24.9 K/kW (with 1 W/(m·K) thermal interface material). The maximum allowable baseplate temperature is 150 °C, validated via IEC 60068 thermal cycling tests over 1000 cycles between −40 °C and 150 °C, confirming mechanical integrity of the AlSiC baseplate and AlN solder joints.

Is partial discharge testing performed, and what is the isolation rating?

Yes-the module is tested per IEC 60664 for partial discharge: extinction voltage is 2.6 kV RMS at ≤10 pC, and isolation test voltage is 6.0 kV RMS for 1 minute. Creepage (40.0 mm terminal-to-baseplate) and clearance (31.0 mm terminal-to-baseplate) meet reinforced insulation requirements for 3.3 kV AC systems, certified under IEC 61800-5-1.

FF4000UXTR33T2M1BPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: XHP™2

Package/Case:: Module

Packaging:: Tray

Product Status:: Active

Technology:: Silicon Carbide (SiC)

Configuration:: 2 N-Channel (Half Bridge)

FET Feature:: -

Drain to Source Voltage (Vdss):: 3300V (3.3kV)

Current - Continuous Drain (Id) @ 25°C:: 500A (Tc)

Rds On (Max) @ Id, Vgs:: 4.8mOhm @ 500A, 15V

Vgs(th) (Max) @ Id:: 5.55V @ 450mA

Gate Charge (Qg) (Max) @ Vgs:: 2500nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds:: 101000pF @ 1800V

Power - Max:: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: AG-XHP2K17

FF4000UXTR33T2M1BPSA1 FAQ

1.How can I place an order for FF4000UXTR33T2M1BPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FF4000UXTR33T2M1BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FF4000UXTR33T2M1BPSA1 reliable?

The price and inventory of FF4000UXTR33T2M1BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF4000UXTR33T2M1BPSA1 is usually 5 days.

3.What payment methods are accepted for FF4000UXTR33T2M1BPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF4000UXTR33T2M1BPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FF4000UXTR33T2M1BPSA1?

FF4000UXTR33T2M1BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FF4000UXTR33T2M1BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FF4000UXTR33T2M1BPSA1?

For technical support, including FF4000UXTR33T2M1BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF4000UXTR33T2M1BPSA1 requirements.

6.How does Aetrix verify that FF4000UXTR33T2M1BPSA1 is sourced from the original manufacturer or authorized distributors?

All FF4000UXTR33T2M1BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF4000UXTR33T2M1BPSA1 meets industry standards.

7.What is the process for return or replacement of FF4000UXTR33T2M1BPSA1?

All FF4000UXTR33T2M1BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF4000UXTR33T2M1BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FF4000UXTR33T2M1BPSA1 part is unused and in its original packaging.

Return procedure for FF4000UXTR33T2M1BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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