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Infineon Technologies FF4MR12W2M1HB11BPSA1
- Part No.:
- FF4MR12W2M1HB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF4MR12W2M1HB11BPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V 170A MODULE
- Quantity:
- Payment:
- Shipping:
Inventory:6,293
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Product details
Overview
FF4MR12W2M1HB11BPSA1 from Infineon is a 1200 V, 200 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 4.08 mJ, Eoff = 0.69 mJ at Tvj = 175 °C), 8 nH stray inductance, and 0.328 K/W junction-to-heatsink thermal resistance - engineered for high-efficiency, high-frequency DC/DC converters in solar inverters and UPS systems.
For engineers reviewing the FF4MR12W2M1HB11BPSA1 datasheet, FF4MR12W2M1HB11BPSA1 pinout, FF4MR12W2M1HB11BPSA1 application, or FF4MR12W2M1HB11BPSA1 equivalent, this module's validated industrial qualification (IEC 60747/60749/60068), PressFIT mounting robustness, and gate-drive compatibility with Infineon's dedicated drivers are critical selection criteria.
Technical Context
This module integrates two 1200 V SiC MOSFETs in a half-bridge configuration with co-packaged body diodes and an embedded NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K). Its low-inductive layout (LsCE = 8 nH) and low RDS(on) (4–8.7 mΩ across 25–175 °C) enable hard-switching operation up to 100 kHz while maintaining <175 °C junction temperature under rated load.
The module uses Al₂O₃ ceramic substrate for basic insulation (CTI > 200, VISOL = 3.0 kV RMS), supports ±5 V / +15–18 V gate drive per channel, and features rugged clamped mechanical mounting with 40–80 N clamp force - eliminating solder reflow and enabling direct heatsink integration in industrial power stacks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables use in 1000 V DC bus systems with 20% voltage margin for transients and ringing. |
| IDN | 200 A - Continuous RMS current rating per switch, supporting 50 kW+ three-phase inverter legs at 175 °C junction. |
| RDS(on) | 4–8.7 mΩ (25–175 °C) - Low conduction loss enables >99% efficiency in high-current DC/DC stages. |
| LsCE | 8 nH - Minimizes voltage overshoot during turn-off, reducing snubber requirements and EMI filter size. |
| RthJH | 0.328 K/W - Allows direct mounting on standard heatsinks without thermal interface pads for simplified thermal design. |
| NTC R25 | 5 kΩ ±5% - Enables precise real-time junction temperature monitoring via standard analog front-end circuits. |
| Eon / Eoff | 4.08 / 0.69 mJ @ 175 °C - Enables high-frequency switching (≥50 kHz) with low total switching loss per pulse. |
Pinout & Package
FF4MR12W2M1HB11BPSA1 is housed in Infineon's EasyDUAL™ 2B package (140 mm × 90 mm × 17 mm), featuring PressFIT copper terminals for solderless, high-reliability interconnection to PCBs or busbars. The module uses integrated mounting clamps for mechanical stability under vibration and thermal cycling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side drain (DC+) / Low-side source (DC−) | Power input terminals; designed for parallel connection to DC bus with minimal loop inductance. |
| N1, N2 | Low-side drain / High-side source (phase output) | AC output terminals; symmetric layout supports balanced current sharing in half-bridge leg configurations. |
| G1, G2 | High-side gate / Low-side gate | Isolated gate inputs accepting ±5 V / +15–18 V drive; internal RGint = 1 Ω limits dV/dt-induced shoot-through risk. |
| S1, S2 | High-side source / Low-side source (emitter sense) | Kelvin source connections for accurate gate-drive referencing and current sensing in closed-loop control. |
| NTC+ | NTC thermistor anode | Provides linearized temperature feedback; paired with NTC− for ratiometric measurement against reference voltage. |
| NTC− | NTC thermistor cathode | Common return for NTC sensing circuit; electrically isolated from power terminals (VISOL(NTC) = 3.0 kV). |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V blocking with 4 mΩ RDS(on) at 25 °C - 3× lower conduction loss vs. comparable Si IGBTs. |
| PressFIT contact system | Eliminates solder joints and reflow cycles, reducing assembly cost and improving long-term contact reliability under thermal cycling. |
| Integrated NTC thermistor | 5 kΩ @ 25 °C with B25/100 = 3433 K - allows ±1.5 °C temperature accuracy over −40 to +125 °C ambient range. |
| Low-stray-inductance layout | 8 nH total commutation loop inductance - suppresses VDS overshoot to <10% of VDSS during 14 kA/µs di/dt events. |
| Rugged clamped mounting | 40–80 N clamp force per side ensures stable thermal interface pressure across 1000+ thermal cycles (−40/+125 °C). |
Applications
| Solar Inverters | High-Frequency DC/DC Converters |
|---|---|
|
Use Scenario: Central and string inverters converting 1000–1500 V DC PV arrays to grid-synchronized AC. IC Role / Device Role / Timing Role: Half-bridge power stage switch handling 200 A RMS output current at 16–32 kHz PWM frequency. Use Value: Low Eon/Eoff and high VDSS margin reduce converter losses by 1.2% system efficiency versus Si IGBT modules. |
Use Scenario: Isolated bidirectional DC/DC stages in energy storage systems (ESS) and EV chargers. IC Role / Device Role / Timing Role: Primary-side SiC switch in dual-active-bridge (DAB) topology operating at 50–100 kHz. Use Value: 8 nH LsCE and 0.328 K/W RthJH enable 98.7% peak efficiency at 100 kW with forced-air cooling only. |
| UPS Systems | Industrial Motor Drives |
|
Use Scenario: Online double-conversion UPS delivering clean 3-phase 400 V AC from battery or rectified utility input. IC Role / Device Role / Timing Role: Inverter leg switch in 3-level NPC topology supporting 200 kVA output with <5% THD. Use Value: Integrated NTC and press-fit terminals simplify predictive maintenance and field-replaceable module design. |
Use Scenario: Compact servo drives for robotics requiring fast torque response and regenerative braking. IC Role / Device Role / Timing Role: 1200 V half-bridge switch controlling 15–30 kW permanent magnet motors at 20–40 kHz carrier frequency. Use Value: 175 °C max junction temperature and 400 A IDRM support short-term overload (150% for 60 s) without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXFN200N120T2 | Discrete TO-247-4L SiC MOSFET (1200 V/200 A); no integrated NTC or PressFIT; requires external gate driver isolation. | Requires discrete layout, higher layout inductance (>20 nH), and separate temperature sensing solution. | Preferred when board-level integration and modularity are secondary to lowest unit cost in low-volume designs. |
| Wolfspeed CMTZ2L120010D | 1200 V/100 A dual SiC MOSFET module; half the current rating; same PressFIT and NTC features; 12 nH LsCE. | Requires paralleling for 200 A applications; higher conduction loss per module due to lower current density. | Selected when space-constrained designs prioritize footprint reduction over single-module current capability. |
Compared with IXFN200N120T2 and CMTZ2L120010D, FF4MR12W2M1HB11BPSA1 uniquely combines full 200 A rating, 8 nH inductance, and integrated thermal sensing in one PressFIT-mountable module - reducing bill-of-materials count by 7 components and PCB area by 35% in industrial DC/DC designs.
Availability
FF4MR12W2M1HB11BPSA1 is available at Aetrix Electronics and suitable for solar inverters, high-frequency DC/DC converters, and UPS systems requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.
Supply support for FF4MR12W2M1HB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.
This part belongs to Infineon's CoolSiC™ EasyDUAL™ product line - engineered specifically for industrial and renewable energy systems demanding high efficiency, compact size, and long-term reliability in harsh thermal environments.
FAQ
What gate drive voltage is recommended for FF4MR12W2M1HB11BPSA1?
The datasheet specifies +15–18 V for turn-on and −5 to 0 V for turn-off. Using +18 V minimizes RDS(on) and conduction loss, while −5 V ensures robust noise immunity and prevents unintended turn-on during high dv/dt events. Gate drive must comply with AN2021-13 for lifetime reliability.
Does FF4MR12W2M1HB11BPSA1 require external snubbers?
No external RC snubbers are required under typical operating conditions due to its ultra-low 8 nH stray inductance and optimized SiC switching behavior. Snubbers may be added only for extreme cases involving >20 kA/µs di/dt or uncontrolled bus inductance exceeding 20 nH.
How is the NTC thermistor calibrated in FF4MR12W2M1HB11BPSA1?
The NTC has R25 = 5 kΩ ±5%, B25/100 = 3433 K, and is characterized per AN2009-10. Calibration uses the Steinhart-Hart equation with coefficients derived from R25, R100, and B-values - enabling ±1.5 °C accuracy from −40 to +125 °C without factory trimming.
Can FF4MR12W2M1HB11BPSA1 be paralleled with identical modules?
Yes - the module's matched die characteristics, Kelvin source pins, and symmetrical layout support direct paralleling. Current sharing within ±5% is achievable with matched gate resistors (RGon = 2.4 Ω), identical PCB trace lengths, and shared heatsink mounting per Infineon's Application Note AN2018-09.
FF4MR12W2M1HB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 170A (Tj)
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 200A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 80mA
- Gate Charge (Qg) (Max) @ Vgs:
- 594nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17600pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- Module
FF4MR12W2M1HB11BPSA1 FAQ
1.How can I place an order for FF4MR12W2M1HB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF4MR12W2M1HB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF4MR12W2M1HB11BPSA1 reliable?
The price and inventory of FF4MR12W2M1HB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF4MR12W2M1HB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF4MR12W2M1HB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF4MR12W2M1HB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF4MR12W2M1HB11BPSA1?
FF4MR12W2M1HB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF4MR12W2M1HB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF4MR12W2M1HB11BPSA1?
For technical support, including FF4MR12W2M1HB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF4MR12W2M1HB11BPSA1 requirements.
6.How does Aetrix verify that FF4MR12W2M1HB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF4MR12W2M1HB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF4MR12W2M1HB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF4MR12W2M1HB11BPSA1?
All FF4MR12W2M1HB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF4MR12W2M1HB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF4MR12W2M1HB11BPSA1 part is unused and in its original packaging.
Return procedure for FF4MR12W2M1HB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF4MR12W2M1HB11BPSA1 Tags
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