Infineon Technologies FF4MR20KM1HHPSA1

Overview

FF4MR20KM1HHPSA1 from Infineon is a 62 mm C-Series dual-channel SiC MOSFET power module integrating two 2000 V, 300 A CoolSiC™ Trench MOSFETs in a half-bridge configuration with integrated body diodes. It delivers low switching losses (Eon = 50.5 mJ, Eoff = 25.2 mJ at Tvj = 175 °C), RDS(on) of 5.3 mΩ (typ.) at 25 °C, and 4 kV AC insulation for industrial UPS and solar DC/DC converters.

For engineers reviewing the FF4MR20KM1HHPSA1 datasheet, FF4MR20KM1HHPSA1 pinout, FF4MR20KM1HHPSA1 application, or FF4MR20KM1HHPSA1 equivalent, key selection criteria include its 2000 V blocking voltage, 600 A repetitive peak drain current, 0.119 K/W junction-to-case thermal resistance per switch, and qualification to IEC 60747/60749/60068 for industrial environments.

Technical Context

This module implements a symmetrical half-bridge topology with two identical CoolSiC™ Trench MOSFETs (T1/T2), each rated for 2000 V VDSS and 300 A IDN. Gate drive requires ±3 V/18 V (VGS(off)/VGS(on)) with internal 1.2 Ω gate resistors and total gate charge of 1.17 µC.

Thermal design leverages copper baseplate and Al₂O₃ isolation (29 mm creepage to heatsink), supporting continuous operation up to 175 °C junction temperature. Stray inductance is minimized to 20 nH, and module lead resistance is 0.475 mΩ per switch - critical for high-di/dt switching in 10–100 kHz DC/DC and solar inverters.

Key Specifications

Pinout & Package

The FF4MR20KM1HHPSA1 is housed in a standardized 62 mm C-Series industrial power module package with copper baseplate, Al₂O₃ ceramic isolation, and screw-mount terminals (M6). Weight: 340 g. Mounting torque: 3–6 Nm for module, 2.5–5 Nm for terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.

Compared with IXFN120N120T2 and CMT-CT200A120D, FF4MR20KM1HHPSA1 uniquely combines 2000 V rating, 600 A peak current, 4 kV isolation, and full industrial qualification - making it the sole option for certified 1500 V+ UPS and utility-scale solar DC/DC converters.

Availability

FF4MR20KM1HHPSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar DC/DC converters, and high-frequency industrial inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for safety-critical deployments.

Supply support for FF4MR20KM1HHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to Infineon's CoolSiC™ 62 mm C-Series module family, engineered specifically for high-reliability, high-efficiency medium-voltage power conversion in industrial energy infrastructure including solar, UPS, and traction systems.

FAQ

What gate drive voltage is required for reliable operation?

FF4MR20KM1HHPSA1 requires VGS(on) = +18 V and VGS(off) = –3 V for optimal switching performance and long-term reliability. Using less than +15 V risks incomplete turn-on and increased RDS(on); exceeding +20 V may accelerate gate oxide degradation. Application Notes AN 2021-13 specify exact timing and sequencing requirements for dual-gate control.

Can this module replace silicon IGBT modules in existing 1500 V systems?

Yes - FF4MR20KM1HHPSA1 is designed as a drop-in replacement for 1700 V IGBT modules in 1500 V DC systems, offering lower conduction and switching losses, higher frequency capability, and improved thermal performance. Mechanical footprint and terminal layout match standard 62 mm C-Series IGBT modules, but gate drive and protection circuits must be updated for SiC-specific requirements.

What is the maximum allowable case temperature during continuous operation?

The maximum recommended case temperature is 100 °C under continuous rated current (300 A), based on RthJC = 0.119 K/W and max Tvj = 175 °C. At 100 °C case temperature, junction temperature reaches 175 °C - the absolute limit for rated operation. Derating is required above this point; short-term overload to 175 °C junction is permitted per IEC 60068 for up to 10 s.

Does the module include anti-parallel diodes, and what are their ratings?

Yes - each MOSFET channel integrates a monolithic body diode rated for 235 A DC forward current (ISD) at TC = 25 °C and Tvj = 175 °C. Forward voltage is 4.0 V (typ.) at 300 A and 175 °C. These diodes support freewheeling and synchronous rectification without external components, though external SiC Schottky diodes may be added for ultra-low-loss recovery in resonant topologies.