Infineon Technologies FF4MR20KM1HPHPSA1

Overview

FF4MR20KM1HPHPSA1 from Infineon is a 62 mm C-Series power module integrating two CoolSiC™ Trench MOSFETs in a half-bridge configuration, rated for 2000 V V_DSS, 300 A continuous drain current (IDN), and 600 A repetitive peak current (IDRM). It features pre-applied thermal interface material (TIM), 4 kV AC insulation, and low switching losses optimized for high-frequency DC/DC converters and solar inverters.

For engineers reviewing the FF4MR20KM1HPHPSA1 datasheet, FF4MR20KM1HPHPSA1 pinout, FF4MR20KM1HPHPSA1 application, or FF4MR20KM1HPHPSA1 equivalent, key selection criteria include its 0.153 K/W junction-to-heatsink thermal resistance (with TIM), 3.5–10.4 mΩ R_DS(on) across temperature, and gate drive compatibility with ±3 V/18 V logic levels.

Technical Context

This module implements a dual-channel SiC MOSFET half-bridge topology with integrated body diodes, enabling bidirectional switching in resonant and hard-switched topologies. Its 20 nH stray inductance and 0.475 mΩ per-switch lead resistance support high dv/dt and di/dt operation up to 11.4 kV/µs and 3.4 kA/µs.

The device operates over -40 °C to 175 °C junction temperature, with gate threshold voltage (3.45–5.15 V) and total gate charge (1.17 µC) specified at 25 °C, 125 °C, and 175 °C - ensuring predictable timing and loss behavior across industrial thermal profiles.

Key Specifications

Pinout & Package

Package: 62 mm C-Series industrial power module with copper baseplate, Al₂O₃ isolation, and pre-applied thermal interface material. Dimensions conform to standard 62 mm footprint per Infineon package outline document.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.

Compared with IXFN200N200T and CMT-CT200D200, FF4MR20KM1HPHPSA1 delivers 50% higher current rating, 15% lower thermal resistance with TIM, and factory-validated 4 kV isolation - making it optimal for production-ready 200–300 kW industrial inverters where reliability and time-to-market are critical.

Availability

FF4MR20KM1HPHPSA1 is available at Aetrix Electronics and suitable for UPS systems, solar string inverters, and high-frequency DC/DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified manufacturing line.

Supply support for FF4MR20KM1HPHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's CoolSiC™ 62 mm C-Series module family, engineered for high-efficiency, high-reliability medium-voltage power conversion in solar, UPS, and traction applications.

FAQ

What gate drive voltage is required for reliable operation?

FF4MR20KM1HPHPSA1 requires +18 V for turn-on and –3 V for turn-off, as specified in Table 4 of the datasheet. These values ensure full enhancement and robust noise immunity while minimizing gate oxide stress. Operating outside this range risks increased R_DS(on), premature wear, or shoot-through in half-bridge configurations.

Does the module include internal Kelvin source connections?

Yes - the module provides dedicated S1 and S2 Kelvin source terminals for each MOSFET channel. These enable precise gate-source voltage referencing independent of high-current source path voltage drop, critical for stable switching and accurate current sensing in high-di/dt applications.

How is thermal performance affected if the pre-applied TIM is removed or replaced?

Removing or replacing the factory-applied TIM invalidates the published 0.153 K/W R_thJH value. Alternate TIMs introduce interfacial resistance variability; test data shows R_thJH increases by 15–35% with common third-party pastes, risking junction temperature exceedance above 175 °C under full-load conditions.

Can this module replace an IGBT-based 62 mm half-bridge in existing designs?

Direct replacement is possible only with gate driver and layout modifications: SiC requires faster edge rates, lower gate resistance (7.1 Ω vs. typical 15–25 Ω for IGBTs), and stricter layout control to manage 11.4 kV/µs dv/dt. The 20 nH stray inductance must be preserved; otherwise, voltage overshoot may exceed 2000 V rating.