Infineon Technologies FF5MR20KM1HHPSA1

Overview

FF5MR20KM1HHPSA1 from Infineon is a 62 mm C-Series power module integrating two CoolSiC™ Trench MOSFETs in a half-bridge configuration, rated for 2000 V V_DSS, 200 A continuous drain current (IDN), and 400 A repetitive peak current (IDRM). It features low R_DS(on) (5.2–15.5 mΩ across 25–175 °C), 4 kV AC insulation, and 20 nH stray inductance - optimized for high-efficiency, high-frequency switching in industrial DC/DC converters and solar inverters.

For engineers reviewing the FF5MR20KM1HHPSA1 datasheet, FF5MR20KM1HHPSA1 pinout, FF5MR20KM1HHPSA1 application, or FF5MR20KM1HHPSA1 equivalent, key selection criteria include its 2000 V blocking capability, dual-MOSFET thermal resistance (R_thJC = 0.181 K/W per device), gate drive compatibility (V_GS(on) = +18 V, V_GS(off) = –3 V), and qualification to IEC 60747/60749/60068 for industrial environments.

Technical Context

This module implements a symmetric half-bridge topology with two identical SiC MOSFETs (T1/T2), each with integrated body diodes and rated for 2000 V DC blocking. Its 20 nH interconnect inductance and 0.535 mΩ terminal-to-chip resistance support fast switching (t_on = 152 ns, t_off = 213 ns at 25 °C) while minimizing voltage overshoot and conduction loss.

The module uses Al₂O₃ ceramic isolation (CTI > 400, RTI = 140 °C) and copper baseplate construction, enabling operation from –40 to +175 °C junction temperature. Gate threshold voltage (3.45–5.15 V) and total gate charge (0.78 µC) are tightly specified to ensure predictable turn-on behavior under high dv/dt conditions typical in solar and UPS applications.

Key Specifications

Pinout & Package

FF5MR20KM1HHPSA1 is housed in a standardized 62 mm C-Series industrial power module package with copper baseplate, Al₂O₃ isolation, and M6 mounting screws. Terminal layout follows Infineon's C-Series half-bridge footprint (P1, P2, N1, N2, G1, G2, S1, S2).

Key Features

Applications

Availability

FF5MR20KM1HHPSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and high-frequency DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for FF5MR20KM1HHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers supporting industrial, automotive, and renewable energy markets.

This part belongs to Infineon's CoolSiC™ 62 mm C-Series module family, engineered specifically for high-reliability, high-efficiency power conversion in solar, UPS, and traction applications where 2000 V SiC performance and industrial qualification are mandatory.

FAQ

What gate driver voltage is required for reliable operation of FF5MR20KM1HHPSA1?

The module requires +18 V gate drive for turn-on and –3 V for turn-off, as specified in Table 4 of the datasheet. Using less than +15 V risks incomplete enhancement and increased R_DS(on); omitting negative bias increases risk of spurious turn-on due to dv/dt coupling. Application Notes AN 2021-13 detail gate drive design rules including PCB layout, gate resistor selection (R_Gon = 7.5 Ω, R_Goff = 4.7 Ω), and isolated supply requirements.

Does FF5MR20KM1HHPSA1 include integrated body diodes, and what are their ratings?

Yes - each MOSFET (T1 and T2) integrates a body diode rated for 165 A DC forward current at T_vj = 175 °C and V_GS = –3 V. Forward voltage is 4.0 V at 200 A and 175 °C (Table 7), enabling efficient synchronous rectification or freewheeling without external diodes. The diodes are not optimized for reverse recovery but support unidirectional conduction in half-bridge topologies.

How is thermal performance characterized, and what heatsink interface is recommended?

Thermal resistance is specified as R_thJC = 0.181 K/W per MOSFET (junction-to-case) and R_thCH = 0.0500 K/W (case-to-heatsink) with λ_grease = 1 W/(m·K). Mounting torque must be 3–6 Nm for M6 screws (Table 2). Use thermally conductive grease meeting IPC-STD-004B Type L, applied uniformly at 0.1–0.15 mm thickness; flatness tolerance of heatsink surface must be ≤30 µm over 62 mm span.

Is FF5MR20KM1HHPSA1 qualified for automotive applications?

No - it is qualified for industrial applications per IEC 60747, 60749, and 60068, but not AEC-Q101. While used in EV charging stations, it lacks automotive-specific stress testing (e.g., temperature cycling –40 to +150 °C, board-level vibration). For automotive traction inverters, Infineon recommends the hybrid-pack or EasyPACK™ variants qualified to AEC-Q101 Rev D.