Infineon Technologies FF6MR12KM1HHPSA1

Overview

FF6MR12KM1HHPSA1 from Infineon is a 62 mm C-Series dual-channel SiC MOSFET power module with integrated body diodes, rated for 1200 V drain-source voltage and 180 A nominal continuous current per switch. It employs CoolSiC™ trench technology to deliver low R_DS(on) (5.5 mΩ typ. at 25 °C), ultra-low switching losses (E_on/E_off ≤ 3.6/3.3 mJ at 175 °C), and 4 kV AC insulation - enabling high-efficiency, high-frequency operation in DC/DC converters and EV DC chargers.

For engineers reviewing the FF6MR12KM1HHPSA1 datasheet, FF6MR12KM1HHPSA1 pinout, FF6MR12KM1HHPSA1 application, or FF6MR12KM1HHPSA1 equivalent, key selection criteria include its 1200 V/180 A rating, 20 nH stray inductance, 0.188 K/W junction-to-case thermal resistance, gate drive compatibility with ±3 V/18 V logic, and qualification per IEC 60747/60749/60068 for industrial environments.

Technical Context

This module integrates two independent 1200 V CoolSiC™ trench MOSFETs with co-packaged body diodes in a single 62 mm press-fit package. Each channel supports 360 A peak repetitive drain current and operates up to 175 °C junction temperature, with gate threshold voltage tightly distributed (3.45–5.15 V) and total gate charge of 0.446 µC at 800 V.

Its electrical architecture enables hard-switched topologies at >100 kHz with minimal loss trade-offs: typical turn-on/off delays are 58–61 ns and 101–111 ns respectively, while E_on and E_off remain stable across temperature (2.8–3.6 mJ and 2.9–3.3 mJ). The Al₂O₃ baseplate provides 29 mm creepage to heatsink and CTI >400 for reinforced isolation.

Key Specifications

Pinout & Package

FF6MR12KM1HHPSA1 uses a standardized 62 mm C-Series press-fit module package with copper baseplate and Al₂O₃ isolation. Dimensions: 106.4 × 62.2 × 17.0 mm (L × W × H); weight: 340 g; mounting torque: M6 screws, 3–6 Nm for module, 2.5–5 Nm for terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET module applications.

Compared with FS800R08A6P2B and FF6MR12KM1H, FF6MR12KM1HHPSA1 uniquely combines 1200 V rating, trench-SiC performance, and IEC-validated lifetime - making it the only option qualified for 175 °C continuous operation in EV DC fast charging and 1500 V solar inverters.

Availability

FF6MR12KM1HHPSA1 is available at Aetrix Electronics and suitable for UPS systems, solar inverters, and EV DC fast chargers requiring stable component supply, long-lifecycle assurance, and validated high-temperature reliability.

Supply support for FF6MR12KM1HHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's CoolSiC™ 62 mm C-Series module family, engineered specifically for high-efficiency, high-power-density industrial and automotive traction applications demanding 1200 V SiC switching performance.

FAQ

What gate drive voltage is recommended for FF6MR12KM1HHPSA1?

The datasheet specifies V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V. A –3 V/18 V gate drive is validated for optimal switching loss and reliability; using 0 V off-state increases Miller-induced false turn-on risk under high dv/dt conditions.

Does FF6MR12KM1HHPSA1 include anti-parallel diodes?

Yes - each MOSFET channel integrates a monolithic body diode optimized for SiC operation, with forward voltage V_SD = 3.95 V at 180 A and 175 °C. No external diodes are required for freewheeling in half-bridge configurations.

What is the maximum allowable junction temperature during overload?

T_vj,op may exceed 150 °C during short-term overload conditions, up to 175 °C continuously rated. The device is qualified for 175 °C operation per IEC 60747, and transient overloads beyond this require adherence to AN 2021-13 derating guidelines.

How does the 4 kV AC isolation rating impact system-level safety certification?

The 4.0 kV AC, 1 min isolation between terminals and heatsink satisfies reinforced insulation requirements for 1000 V AC mains-connected equipment (IEC 62109, UL 62368-1), eliminating need for additional isolation barriers in UPS and solar inverter designs.