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Infineon Technologies FF8MR12W1M1HB11BPSA1
- Part No.:
- FF8MR12W1M1HB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF8MR12W1M1HB11BPSA1.pdf
- Description:
- MOSFET 1200V AG-EASY1B
- Quantity:
- Payment:
- Shipping:
Inventory:34
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Product details
Overview
FF8MR12W1M1HB11BPSA1 from Infineon is a 1200 V, 100 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 3.21 mJ, Eoff = 0.83 mJ at Tvj = 175 °C), 9 nH stray inductance, and rugged mounting via integrated clamps-designed for high-efficiency DC/DC converters in EV charging infrastructure.
For engineers reviewing the FF8MR12W1M1HB11BPSA1 datasheet, FF8MR12W1M1HB11BPSA1 pinout, FF8MR12W1M1HB11BPSA1 application, or FF8MR12W1M1HB11BPSA1 equivalent, key selection criteria include its 1200 V blocking capability, 200 A peak current rating, PressFIT mechanical interface, integrated temperature sensing (5 kΩ NTC), and qualification per IEC 60747/60749/60068 for industrial reliability.
Technical Context
This module integrates two identical 1200 V CoolSiC™ Trench MOSFETs in a half-bridge configuration, each with body diode and gate driver-compatible gate charge (QG = 0.297 µC) and low RDS(on) (8.1 mΩ typ. at 25 °C). Its low-inductive layout (LsCE = 9 nH) and symmetric thermal path support high-frequency operation up to 100 kHz in hard-switched topologies.
The embedded NTC thermistor (R25 = 5 kΩ, B25/100 = 3433 K) enables real-time junction temperature monitoring, while the PressFIT contact system eliminates soldering and ensures repeatable thermal resistance (RthJH = 0.553 K/W per MOSFET with λgrease = 1 W/(m·K)).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables use in 800 V DC bus systems with 50 % voltage margin for transients and safety compliance. |
| IDN | 100 A - Continuous rated current per switch, supporting 25 A rms per connector pin under standard mounting. |
| RDS(on) | 8.1 mΩ (typ., 25 °C) - Minimizes conduction loss in high-current DC/DC stages; rises to 17.4 mΩ at 175 °C. |
| Eon / Eoff | 3.21 mJ / 0.83 mJ (Tvj = 175 °C) - Low energy loss per pulse enables high-frequency switching with reduced heatsink requirements. |
| LsCE | 9 nH - Ultra-low stray inductance suppresses voltage overshoot during turn-off, easing snubber design. |
| NTC R25 | 5 kΩ ±5 % - Integrated temperature sensor calibrated for accurate thermal feedback in closed-loop thermal management. |
| RthJH | 0.553 K/W per MOSFET - Predictable thermal path supports reliable derating and lifetime estimation in forced-air or liquid-cooled systems. |
Pinout & Package
FF8MR12W1M1HB11BPSA1 uses the EasyDUAL 2B package (140 mm × 90 mm × 17 mm), featuring PressFIT terminals for direct PCB insertion without soldering. The module includes integrated mounting clamps and an Al₂O₃ ceramic baseplate for 3.0 kV RMS isolation (IEC 61140 Class 1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC bus input | Dual parallel inputs reduce current density and thermal stress on high-side source connection. |
| N1, N2 | Negative DC bus return | Dual parallel returns ensure symmetrical current distribution and minimize loop inductance. |
| U, V | Phase outputs (half-bridge legs) | Direct connection points to motor windings or transformer primary; optimized for low Lσ routing. |
| G1, G2 | Gate drive inputs (high-side / low-side) | Isolated gate terminals with internal RGint = 2.1 Ω; require external gate resistors for precise dv/dt control. |
| S1, S2 | Source sense (Kelvin connections) | Enable accurate gate-source voltage regulation by compensating for PCB trace resistance. |
| T1, T2 | NTC thermistor terminals | Two-wire interface for 5 kΩ NTC; supports linearized temperature readout with standard ADC circuits. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V operation with lower RDS(on) and gate charge than planar SiC, reducing both conduction and switching losses. |
| PressFIT contact system | Eliminates reflow soldering; provides mechanical robustness and thermal cycle reliability exceeding 1000 cycles at ΔT = 100 K. |
| Integrated NTC thermistor | 5 kΩ at 25 °C with B25/100 = 3433 K - enables ±1.5 °C temperature accuracy across -40 to 175 °C operating range. |
| Low-inductive module layout | 9 nH common-emitter stray inductance - reduces voltage spikes >200 V during 10 kA/µs switching, lowering EMI filter burden. |
| Qualified industrial reliability | Tested per IEC 60747 (semiconductor), IEC 60749 (robustness), and IEC 60068 (environmental) standards for 15+ year field life. |
Applications
| EV DC Fast Charging | Industrial UPS Systems |
|---|---|
Use Scenario: 150 kW bi-directional DC/DC stage converting 400–1000 V battery voltage to 400–800 V grid interface in liquid-cooled charging cabinets. IC Role / Device Role / Timing Role: Dual-channel SiC MOSFET half-bridge switching device handling 100 A continuous current at 50–100 kHz PWM frequency. Use Value: Low Eon/Eoff and 9 nH LsCE enable >99 % efficiency at full load while maintaining <105 °C junction temperature under forced air cooling. | Use Scenario: Online double-conversion UPS delivering clean 3-phase 400 V output from rectified AC input, requiring high reliability and zero transfer time. IC Role / Device Role / Timing Role: High-voltage inverter stage driving LC filter with fast transient response and low THD. Use Value: PressFIT mounting and integrated NTC allow rapid field replacement and real-time thermal derating to prevent overload failure during brownouts. |
| Renewable Energy Storage Inverters | High-Frequency Induction Heating |
Use Scenario: Grid-tied battery storage system using 1200 V DC link to minimize current and cable losses in 500 kW containerized units. IC Role / Device Role / Timing Role: Bidirectional power conversion switch enabling both charging (rectifier mode) and discharging (inverter mode). Use Value: Body diode forward voltage of 3.8 V at 175 °C ensures low reverse conduction loss during synchronous rectification, improving round-trip efficiency. | Use Scenario: Solid-state RF generator operating at 20–50 kHz for metal heating in forging and brazing, demanding high dV/dt immunity and thermal stability. IC Role / Device Role / Timing Role: Resonant half-bridge switch controlling tank circuit current with precise dead-time control. Use Value: 200 A IDRM rating and 840 A short-circuit withstand (2 µs) provide margin against inrush and arc faults during coil detuning events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS8MR12W1M1H_B11 | Same die, but with solder-based terminals instead of PressFIT; lacks integrated mounting clamps. | Better suited for wave-soldered legacy designs; higher assembly cost and lower thermal cycle endurance. | Select when existing PCB layout prohibits PressFIT footprint or when manual rework is required. |
| FF6MR12W2M1_B11 | 1200 V / 60 A rating; lower current, smaller footprint; same NTC and PressFIT interface. | Targeted at 50–80 kW systems where space and cost constrain full 100 A capacity. | Choose for compact designs needing identical thermal interface and control compatibility but reduced power density. |
Compared with FS8MR12W1M1H_B11 and FF6MR12W2M1_B11, FF8MR12W1M1HB11BPSA1 uniquely combines 100 A current rating, PressFIT reliability, and integrated clamping-making it optimal for high-power, maintenance-sensitive EV charging and industrial UPS deployments where field serviceability and thermal margin are critical.
Availability
FF8MR12W1M1HB11BPSA1 is available at Aetrix Electronics and suitable for EV DC fast charging, industrial uninterruptible power supplies, and renewable energy storage inverters requiring stable component supply, long-term lifecycle support, and qualified industrial-grade reliability.
Supply support for FF8MR12W1M1HB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
This part belongs to the CoolSiC™ EasyDUAL™ product line-engineered specifically for high-efficiency, high-reliability power conversion in electric vehicle infrastructure, industrial UPS, and renewable energy systems.
FAQ
What gate drive voltage is recommended for FF8MR12W1M1HB11BPSA1?
The datasheet specifies VGS(on) = 15–18 V and VGS(off) = –5 to 0 V. A typical robust configuration uses +18 V turn-on and –3 V turn-off to ensure fast, low-loss switching while suppressing spurious turn-on. Gate resistor values must be selected per application dv/dt requirements-RGon = 8.2 Ω and RGoff = 2.7 Ω are validated for 600 V inductive loads.
Does FF8MR12W1M1HB11BPSA1 include anti-parallel diodes?
Yes-it integrates intrinsic body diodes within each CoolSiC™ MOSFET, characterized with VSD = 3.8 V (max) at 100 A and 175 °C. These diodes support synchronous rectification in bidirectional topologies, though external SiC Schottky diodes may be added for ultra-low recovery noise in sensitive RF applications.
How is thermal measurement performed using the integrated NTC?
The NTC (R25 = 5 kΩ, B25/100 = 3433 K) connects between terminals T1 and T2. A constant-current bias (e.g., 100 µA) or voltage divider with precision reference yields resistance, which is converted to temperature using the Steinhart-Hart equation or lookup table. Accuracy is ±1.5 °C from –40 to 175 °C when calibrated per Infineon Application Note AN2021-13.
What mechanical mounting method does FF8MR12W1M1HB11BPSA1 require?
It uses integrated mounting clamps that secure the module directly to a heatsink without screws or additional hardware. Clamping force per clamp is specified at 20–50 N; torque must be applied evenly to avoid warping. PressFIT terminals insert into plated-through holes on the PCB-no soldering required-and maintain alignment under thermal cycling per IEC 60068-2-66.
FF8MR12W1M1HB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B
FF8MR12W1M1HB11BPSA1 FAQ
1.How can I place an order for FF8MR12W1M1HB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF8MR12W1M1HB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF8MR12W1M1HB11BPSA1 reliable?
The price and inventory of FF8MR12W1M1HB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF8MR12W1M1HB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF8MR12W1M1HB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF8MR12W1M1HB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF8MR12W1M1HB11BPSA1?
FF8MR12W1M1HB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF8MR12W1M1HB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF8MR12W1M1HB11BPSA1?
For technical support, including FF8MR12W1M1HB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF8MR12W1M1HB11BPSA1 requirements.
6.How does Aetrix verify that FF8MR12W1M1HB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF8MR12W1M1HB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF8MR12W1M1HB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF8MR12W1M1HB11BPSA1?
All FF8MR12W1M1HB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF8MR12W1M1HB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF8MR12W1M1HB11BPSA1 part is unused and in its original packaging.
Return procedure for FF8MR12W1M1HB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF8MR12W1M1HB11BPSA1 Tags
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
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