Renesas FK10KM-12-A8#B00

Overview

FK10KM-12-A8#B00 from Mitsubishi Electric is an N-channel power MOSFET designed for high-speed switching in isolated DC-DC converters and motor drives. It features a 600 V drain-source breakdown voltage, 10 A continuous drain current, 1.18 Ω maximum R_DS(on) at V_GS = 10 V, 2000 V_rms isolation voltage, and integrated fast recovery diode with 150 ns reverse recovery time. It is used in servo motor drive and UPS inverters.

For engineers reviewing the FK10KM-12-A8#B00 datasheet, FK10KM-12-A8#B00 pinout, FK10KM-12-A8#B00 application, or FK10KM-12-A8#B00 equivalent, key selection criteria include its TO-220FN package, 2000 V isolation rating, 150 ns diode trr, thermal resistance of 2.0 °C/W (ch-to-case), and suitability for high-voltage, medium-current switching where galvanic isolation and fast body diode recovery are required.

Technical Context

This device integrates a high-voltage N-channel MOSFET with a co-packaged fast-recovery diode optimized for unidirectional energy transfer in isolated topologies such as flyback and forward converters. Its 600 V V_DSS and 2000 V_rms isolation support operation across reinforced insulation barriers in industrial and medical power supplies.

The MOSFET exhibits gate threshold voltage of 2.0 V (min), typical transconductance |y_fs| of 4.5 S at I_D = 5 A, and switching times including t_d(on) = 25 ns, t_r = 35 ns, t_d(off) = 130 ns, and t_f = 45 ns under standard test conditions (V_DD = 200 V, I_D = 5 A, R_GEN = 50 Ω).

Key Specifications

Pinout & Package

FK10KM-12-A8#B00 is housed in a TO-220FN (Full-Nib) package with insulated tab, enabling direct mounting to heatsinks without additional isolation hardware. The package includes three leads: Gate (pin 1), Drain (pin 2), Source (pin 3), with the metal tab electrically connected to the Drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated switching applications.

Compared with IXFH10N60P and STW10NK60Z, FK10KM-12-A8#B00 uniquely combines 2000 V_rms isolation, integrated 150 ns diode, and TO-220FN insulated tab-making it the only option among the three qualified for certified reinforced-insulation power conversion without added isolation components.

Availability

FK10KM-12-A8#B00 is available at Aetrix Electronics and suitable for servo motor drive, uninterruptible power supply (UPS), and industrial DC-DC converter applications requiring stable component supply, long-term lifecycle assurance, and compliance with reinforced insulation standards.

Supply support for FK10KM-12-A8#B00 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Mitsubishi Electric Corporation is a Japanese multinational specializing in power electronics, factory automation, and energy systems, with over 50 years of semiconductor innovation.

The FK10KM series was developed specifically for high-reliability, isolated high-voltage switching in industrial power supplies and motor control systems where safety certification and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for FK10KM-12-A8#B00?

The FK10KM-12-A8#B00 is rated for 10 A continuous drain current (I_D) at case temperature T_c = 25°C. Derating applies above this temperature-e.g., ~6.5 A at T_c = 100°C per the power dissipation derating curve. This rating assumes proper heatsinking and accounts for both conduction and switching losses in steady-state operation of the FK10KM-12-A8#B00.

Does FK10KM-12-A8#B00 have a built-in body diode, and what is its reverse recovery performance?

Yes, the FK10KM-12-A8#B00 integrates a fast recovery diode with maximum reverse recovery time (t_rr) of 150 ns under I_S = 10 A and di/dt = –100 A/µs. This diode is co-packaged and electrically matched to the MOSFET die, enabling efficient freewheeling in flyback and resonant converters without external diode placement constraints-critical for consistent timing in the FK10KM-12-A8#B00's target applications.

What does the "A8#B00" suffix indicate in FK10KM-12-A8#B00?

The "A8#B00" suffix denotes a specific manufacturing variant and packaging configuration: "A8" refers to the internal revision level and wafer lot control, while "#B00" indicates tape-and-reel packaging with embossed carrier tape, 8 mm width, and 1000-unit reels-standard for automated SMT assembly. This exact marking ensures traceability and compatibility with pick-and-place equipment used in FK10KM-12-A8#B00 deployment.

Can FK10KM-12-A8#B00 be used in place of standard TO-220 MOSFETs without layout changes?

No-FK10KM-12-A8#B00 uses the TO-220FN (Full-Nib) variant, where the metal tab is electrically connected to the Drain and fully insulated. Unlike standard TO-220, it requires no insulating washer but mandates correct thermal pad clearance and creepage distance verification. PCB footprint and mounting must match TO-220FN dimensions (e.g., 15.0 ± 0.3 mm lead spacing); using it as a drop-in replacement for non-FN TO-220 parts may compromise isolation or thermal performance of the FK10KM-12-A8#B00.

What gate drive voltage is required to achieve the specified R_DS(on) for FK10KM-12-A8#B00?

To achieve the maximum R_DS(on) of 1.18 Ω, the FK10KM-12-A8#B00 requires V_GS = 10 V. Its gate threshold voltage (V_GS(th)) is 2.0 V (min), but full enhancement occurs at ≥8 V. Driving below 8 V increases R_DS(on) nonlinearly-e.g., at V_GS = 5 V, R_DS(on) rises to ~4.5 Ω-so stable 10–15 V gate drive is recommended for optimal efficiency in all FK10KM-12-A8#B00 implementations.