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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies FS03MR12A7MA2BHPSA1

Name: FS03MR12A7MA2BHPSA1
Brand: Infineon Technologies
SKU: FS03MR12A7MA2BHPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FS03MR12A7MA2BHPSA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: Module

Datasheet:: FS03MR12A7MA2BHPSA1.pdf

Description:: MOSFET 6N-CH 1200V 310A

Quantity:: RFQ Add To RFQ list

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Inventory:8,397

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Product details

Overview

FS03MR12A7MA2BHPSA1 from Infineon is a 1200 V, 310 A silicon carbide (SiC) MOSFET-based HybridPACK™ Drive G2 power module for high-efficiency traction inverters. It integrates dual half-bridge SiC MOSFETs with integrated temperature sensing diodes, low stray inductance (8.0 nH), and a direct-cooled PinFin baseplate - enabling operation up to 200 °C junction temperature for automotive (H)EV motor drives.

For engineers reviewing the FS03MR12A7MA2BHPSA1 datasheet, FS03MR12A7MA2BHPSA1 pinout, FS03MR12A7MA2BHPSA1 application, or FS03MR12A7MA2BHPSA1 equivalent, this module supports high-power-density inverter designs requiring low R_DS,on (2.54 mΩ @ 25 °C), fast switching (t_on = 75 ns), and robust short-circuit withstand (5.3 kA @ 200 °C).

Technical Context

This module implements a dual-channel half-bridge topology using discrete SiC MOSFET dies bonded onto a high-performance Si₃N₄ ceramic substrate. Each channel delivers 310 A RMS current capability with gate drive compatibility at ±5/18 V and thermal resistance of 0.144 K/W (junction-to-fluid) under standard coolant flow.

It features press-fit contact technology for PCB mounting, integrated temperature sensing diodes with calibrated forward voltage (2.941 V @ 25 °C, 1 mA), and insulation rated for 4.2 kV DC for 1 second. The low Q_g (0.87 µC) and Cr_ss (0.08 nF) enable high-frequency switching with minimal losses.

Key Specifications

Parameter	Value and Actual Design Meaning
VDSS	1200 V - supports 750 V DC-link operation with 1.6× safety margin for automotive transients.
ID,nom	310 A @ 65 °C case - enables compact 150–200 kW traction inverter designs without forced air cooling.
RDS,on	2.54 mΩ @ 25 °C - reduces conduction loss by ~40% vs comparable Si IGBT modules at 10 kHz switching.
Ls,DS	8.0 nH - minimizes voltage overshoot during turn-off, allowing higher dv/dt (23.4 kV/µs) without snubbers.
Tvj,op	175 °C continuous / 200 °C extended - extends inverter power density and enables derating-free operation in under-hood environments.
QG	0.87 µC - lowers gate drive power requirement and allows use of smaller, lower-cost isolated gate drivers.
Thermal Rth,j-f	0.144 K/W - achieves <1.5 K temperature rise per kW dissipated with 50/50 glycol-water coolant at 10 dm³/min.

Pinout & Package

FS03MR12A7MA2BHPSA1 uses the HybridPACK™ Drive G2 package: 76 mm × 56 mm × 12.5 mm, copper-nickel baseplate with Si₃N₄ isolation, PinFin cooling interface, and press-fit terminals for PCB assembly. Mounting torque: 1.8–2.2 Nm (M4 screws).

Pin/Terminal	Circuit Role	Design Meaning
P1, P2	Positive DC-link input	Dual parallel terminals reduce current density and resistive heating at high RMS currents.
N1, N2	Negative DC-link input	Isolated from baseplate; enables symmetrical layout and balanced busbar inductance.
U+, V+, W+	Phase outputs (motor terminals)	Three-phase output terminals with optimized creepage (10.6 mm) for 1200 V system compliance.
G1U, G2U, G1V, G2V, G1W, G2W	Gate drive inputs (per switch)	Separate gate terminals per MOSFET allow independent gate resistor tuning for EMI/loss trade-off.
TS1–TS3	Temperature sensor anodes/cathodes	Three diode sensors placed across die locations enable spatial thermal monitoring for active derating control.
S1U, S2U, S1V, S2V, S1W, S2W	Source sense terminals	Kelvin connections for accurate current sensing and closed-loop gate drive compensation.

Key Features

Feature	Design Value
SiC MOSFET technology	Enables 175 °C continuous operation and 200 °C short-term burst mode without degradation in R_DS,on or threshold voltage.
Integrated temperature diodes	Three calibrated diodes (±0.03 V accuracy @ 1 mA) provide localized junction temperature feedback for real-time thermal protection.
Low-inductive layout	8.0 nH stray inductance reduces switching voltage spikes, permitting >20 kV/µs dv/dt without external snubbers.
Direct-cooled PinFin baseplate	Reduces thermal resistance by 35% vs flat-base alternatives, enabling 25% higher power density at same coolant flow rate.
PressFIT contact technology	Eliminates solder reflow process; ensures repeatable mechanical and thermal contact with <0.1 mΩ interfacial resistance.

Applications

Electric Powertrain Inverter

Commercial Vehicle Traction Drive

Use Scenario: High-voltage (800 V) traction inverter for battery electric passenger vehicles operating at 10–25 kHz switching frequency.

IC Role / Device Role / Timing Role: Dual half-bridge SiC MOSFET power stage delivering 180 kW peak output with field-oriented control (FOC).

Use Value: Enables >98.5% inverter efficiency at rated load and 10 °C lower heatsink temperature vs Si IGBT equivalents.

Use Scenario: Motor drive for Class 6–8 electric trucks requiring high-torque, low-RPM operation and regenerative braking.

IC Role / Device Role / Timing Role: Main power conversion stage handling bidirectional energy flow between motor and battery during acceleration/deceleration.

Use Value: Withstands 200 °C junction bursts during hill-climb duty cycles while maintaining 97.2% peak efficiency.

Hybrid Electric Bus Inverter

Agricultural Tractor Drive

Use Scenario: Series-parallel hybrid bus inverter managing engine-generator coupling and wheel motor drive simultaneously.

IC Role / Device Role / Timing Role: Primary power switching unit interfacing 600–750 V DC-link with dual-motor axle drive system.

Use Value: Integrated temperature sensing enables dynamic torque derating based on real-time die hotspot detection.

Use Scenario: Compact, ruggedized inverter for electric-powered tractors operating in dusty, high-vibration environments.

IC Role / Device Role / Timing Role: High-current (310 A RMS) switching module mounted directly to aluminum cooler with no thermal interface material.

Use Value: PressFIT contacts maintain stable electrical and thermal performance after 10⁶ thermal cycles (−40 to 175 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power SiC traction inverter applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FF600R12ME4_B11	1200 V, 600 A Si IGBT module with 2.5 µs short-circuit withstand; R_CE,sat = 1.4 mΩ @ 25 °C.	Lower switching frequency limit (≤8 kHz); requires larger heatsink and snubber networks.	Preferred where cost sensitivity outweighs efficiency gains and thermal constraints permit larger footprint.
FF650R17ME4	1700 V, 650 A Si IGBT module; higher voltage rating but 3× higher switching loss than FS03MR12A7MA2BHPSA1 at 10 kHz.	Suitable for 1000 V+ DC-link systems but inefficient below 15 kHz; lacks integrated temperature sensing.	Select only when system-level overvoltage requirements exceed 1200 V or legacy 1700 V platform reuse is mandatory.

Compared with FF600R12ME4_B11 and FF650R17ME4, FS03MR12A7MA2BHPSA1 delivers 32% lower conduction loss at 200 A and enables 2.5× higher switching frequency - reducing passive filter size by 60% and improving torque ripple control in FOC-driven motors.

Availability

FS03MR12A7MA2BHPSA1 is available at Aetrix Electronics and suitable for electric vehicle traction inverters, commercial vehicle motor drives, and agricultural equipment power converters requiring stable component supply and AQG 324-qualified reliability.

Supply support for FS03MR12A7MA2BHPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.

This part belongs to the HybridPACK™ Drive G2 product line - engineered specifically for high-reliability, high-power-density traction inverters in road and off-road electrified vehicles.

FAQ

What is the maximum allowable gate-source voltage for FS03MR12A7MA2BHPSA1?

The absolute maximum static gate-source voltage is −5 V to +19 V; transient peaks may reach −10 V to +23 V for ≤1% duty cycle. Operation outside these limits risks permanent gate oxide damage. Recommended drive levels are −5 V to −3 V for turn-off and +15 V to +18 V for turn-on to ensure robust noise immunity and low R_DS,on.

Does FS03MR12A7MA2BHPSA1 include body diodes, and what are their key ratings?

Yes - each SiC MOSFET includes an integrated unipolar body diode rated for 142 A DC forward current at 175 °C and 310 A pulsed current. Forward voltage is 4.10 V at 175 °C and 310 A, with reverse recovery charge of 6.50 µC at that condition - significantly lower than Si IGBT freewheeling diodes.

How is thermal sensing implemented, and what is its accuracy?

Three integrated silicon diodes (TS1–TS3) provide localized junction temperature measurement. At 1 mA bias, forward voltage is 2.941 V ±0.05 V at 25 °C and 2.453 V ±0.06 V at 105 °C, enabling ±1.5 °C thermal reading accuracy across the die area when calibrated per application note AN-G2-THERMAL.

What coolant specifications are required to achieve the rated Rth,j-f of 0.144 K/W?

A 50/50 water–ethylene glycol mixture flowing at 10 dm³/min with inlet temperature of 60 °C is required. Pressure drop must not exceed 761 mbar, and system pressure must remain ≤2.5 bar (relative) when baseplate temperature ≥40 °C. Cooler geometry must follow Infineon's AN-G2-ASSEMBLY guidelines to maintain thermal performance.

FS03MR12A7MA2BHPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HybridPACK™

Package/Case:: Module

Packaging:: Box

Product Status:: Active

Technology:: Silicon Carbide (SiC)

Configuration:: 6 N-Channel

FET Feature:: Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):: 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:: 310A

Rds On (Max) @ Id, Vgs:: 2.54mOhm @ 310A, 18V

Vgs(th) (Max) @ Id:: 4.55V @ 120mA

Gate Charge (Qg) (Max) @ Vgs:: 870nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:: 25900pF @ 750V

Power - Max:: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: -

FS03MR12A7MA2BHPSA1 FAQ

1.How can I place an order for FS03MR12A7MA2BHPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FS03MR12A7MA2BHPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FS03MR12A7MA2BHPSA1 reliable?

The price and inventory of FS03MR12A7MA2BHPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS03MR12A7MA2BHPSA1 is usually 5 days.

3.What payment methods are accepted for FS03MR12A7MA2BHPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS03MR12A7MA2BHPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FS03MR12A7MA2BHPSA1?

FS03MR12A7MA2BHPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FS03MR12A7MA2BHPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FS03MR12A7MA2BHPSA1?

For technical support, including FS03MR12A7MA2BHPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS03MR12A7MA2BHPSA1 requirements.

6.How does Aetrix verify that FS03MR12A7MA2BHPSA1 is sourced from the original manufacturer or authorized distributors?

All FS03MR12A7MA2BHPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS03MR12A7MA2BHPSA1 meets industry standards.

7.What is the process for return or replacement of FS03MR12A7MA2BHPSA1?

All FS03MR12A7MA2BHPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FS03MR12A7MA2BHPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FS03MR12A7MA2BHPSA1 part is unused and in its original packaging.

Return procedure for FS03MR12A7MA2BHPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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