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Renesas FS10KM-06-AV#B01

Part No.:
FS10KM-06-AV#B01
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixFS10KM-06-AV#B01.pdf
Description:
HIGH SPEED SWITCHING N-CHANNEL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:48,853

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Product details

Overview

FS10KM-06-AV#B01 from Renesas Electronics is an N-channel power MOSFET in TO-220FN package, rated for 60 V VDSS, 10 A continuous drain current, and 78 mΩ typical rDS(on) at VGS = 10 V. It integrates a fast-recovery body diode (trr = 55 ns) and supports 2000 V isolation voltage, targeting high-speed switching in motor control, lamp drivers, and DC-DC converters.

For engineers reviewing the FS10KM-06-AV#B01 datasheet, FS10KM-06-AV#B01 pinout, FS10KM-06-AV#B01 application, or FS10KM-06-AV#B01 equivalent, key selection criteria include its 60 V breakdown rating, 10 A thermal-limited current capability, integrated diode recovery performance, TO-220FN thermal resistance (Rth(ch–c) = 1.5 °C/W), and suitability for industrial-grade switching loads requiring isolation compliance.

Technical Context

This device operates as a unidirectional high-side or low-side switch with gate-threshold voltage of 2.0–3.0 V and exhibits strong transconductance (|yfs| = 5.0 S typ. at ID = 5 A). Its safe operating area (SOA) is defined up to 100 V and 10 A for DC operation, derating linearly above Tc = 25 °C.

The MOSFET features a fast-switching profile: td(on) = 18 ns, tr = 22 ns, td(off) = 30 ns, and tf = 17 ns under standard test conditions (VDD = 30 V, ID = 5 A, RGEN = 50 Ω). Input capacitance Ciss is 600 pF at VDS = 10 V, supporting efficient gate drive design in hard-switched topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Maximum blocking voltage before avalanche; defines upper limit for bus voltage in 48 V systems.
ID (continuous) 10 A at Tc = 25 °C - Thermal-limited conduction current; requires heatsinking above ambient.
rDS(on) 78 mΩ max at VGS = 10 V - On-resistance determines conduction loss and junction temperature rise.
trr 55 ns typical - Fast body diode recovery enables reduced switching loss in synchronous rectification or freewheeling.
Viso 2000 V AC for 1 minute - Reinforced isolation between drain and case supports safety-critical industrial mounting.
Rth(ch–c) 1.5 °C/W - Channel-to-case thermal resistance; enables direct heatsink mounting without insulating pads in many cases.
Qg Not specified in provided data - Gate charge not published; design must rely on VGS vs. VDS(on) curves and switching time data.

Pinout & Package

FS10KM-06-AV#B01 uses the TO-220FN (Full-Nib) package: insulated plastic case with metal tab connected to drain, three leads (Gate, Drain, Source), and 2.54 mm lead pitch. The drain tab is electrically active and thermally conductive.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control input Receives gate drive signal; threshold voltage 2.0–3.0 V; requires ≥10 V for full enhancement and minimal rDS(on).
2 (Drain) High-side switched terminal Connected to load supply rail; electrically tied to metal tab; must be isolated from heatsink unless using conductive thermal interface.
3 (Source) Power return path Common reference for gate drive and load current; source current capability supports 10 A continuous and 40 A pulsed operation.

Key Features

Feature Design Value
Integrated fast-recovery body diode 55 ns reverse recovery time - Reduces switching loss and EMI in inductive load commutation without external diode.
High isolation voltage 2000 V AC (1 min) - Enables safe use in grounded-chassis industrial equipment without additional insulation barriers.
Low thermal resistance 1.5 °C/W channel-to-case - Allows higher power density with passive heatsinking; reduces need for forced air cooling.
Robust avalanche rating 10 A pulsed avalanche current (IDA) - Supports energy absorption during inductive turn-off transients without failure.
10 V gate drive compatibility Specified rDS(on) and VDS(on) at VGS = 10 V - Matches standard logic-level and microcontroller-compatible gate drivers.

Applications

Motor Control Lamp Control

Use Scenario: Driving brushed DC motors in industrial actuators with PWM at 20–50 kHz.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and flyback energy via integrated diode.

Use Value: 55 ns trr minimizes diode conduction loss and voltage overshoot during commutation, improving efficiency and reducing snubber requirements.

Use Scenario: Dimming incandescent and halogen lamps in building automation systems using phase-cut or PWM control.

IC Role / Device Role / Timing Role: High-current, high-voltage switching transistor controlling lamp power delivery with zero-crossing synchronization.

Use Value: 60 V VDSS and 10 A ID support 230 VAC RMS applications with margin; 2000 V isolation ensures compliance with IEC 61000-4-5 surge immunity.

Solenoid Control DC-DC Converter

Use Scenario: Energizing 24 V solenoids in pneumatic valves with fast turn-on/turn-off cycles.

IC Role / Device Role / Timing Role: Unidirectional power switch managing inductive kickback and sustaining coil hold current.

Use Value: Avalanche-rated 10 A pulsed current (IDA) absorbs stored inductive energy without external clamping, simplifying PCB layout.

Use Scenario: Primary-side switch in non-isolated buck converters for industrial power supplies (12–48 V output).

IC Role / Device Role / Timing Role: Hard-switched power stage transistor operating at ≤100 kHz with fixed duty cycle or PWM regulation.

Use Value: 78 mΩ rDS(on) limits conduction loss to <1.5 W at 5 A, enabling >92% efficiency with proper thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP10NK60ZFP 600 V VDSS, 10 A, 0.72 Ω rDS(on), TO-220FP package (isolated tab) Higher voltage rating but significantly higher on-resistance - unsuitable for low-voltage, high-current apps like 24 V motor drives. Select only if system requires >100 V bus voltage; not drop-in due to mismatched rDS(on) and thermal performance.
IRFZ44NPBF 55 V VDSS, 49 A, 28 mΩ rDS(on), TO-220 package (non-isolated tab) Lower VDSS, higher current, lower RDS(on), no isolation - requires insulating pad for heatsink mounting. Preferable for high-efficiency 24–48 V systems where isolation is handled externally; verify SOA and diode recovery match.

Compared with STP10NK60ZFP and IRFZ44NPBF, FS10KM-06-AV#B01 uniquely balances 60 V rating, 10 A capability, 78 mΩ on-resistance, integrated 55 ns diode, and 2000 V isolation - making it optimal for space-constrained industrial controls where safety and thermal simplicity are prioritized over ultra-low RDS(on).

Availability

FS10KM-06-AV#B01 is available at Aetrix Electronics and suitable for motor control, lamp dimming, and solenoid actuation requiring stable component supply, long-term industrial lifecycle support, and certified isolation compliance.

Supply support for FS10KM-06-AV#B01 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

FS10KM-06-AV#B01 belongs to Renesas' legacy Mitsubishi power MOSFET product line, designed specifically for high-reliability industrial switching applications demanding robust isolation, fast diode recovery, and thermal stability.

FAQ

What is the maximum continuous drain current rating for FS10KM-06-AV#B01?

The FS10KM-06-AV#B01 is rated for 10 A continuous drain current at case temperature Tc = 25 °C. This rating decreases linearly with increasing case temperature, reaching zero at approximately 125 °C per the derating curve. Operation above 10 A requires active thermal management or pulsed duty cycling within the Safe Operating Area (SOA) limits.

Does FS10KM-06-AV#B01 include an integrated body diode, and what is its reverse recovery time?

Yes, FS10KM-06-AV#B01 integrates a fast-recovery N-channel MOSFET body diode with a typical reverse recovery time (trr) of 55 ns, measured at IS = 10 A and di/dt = –100 A/µs. This diode is optimized for inductive load commutation and reduces need for external freewheeling diodes in motor and solenoid drivers.

What is the isolation voltage specification for FS10KM-06-AV#B01, and how is it tested?

The FS10KM-06-AV#B01 provides 2000 V AC isolation voltage between drain (metal tab) and case, tested for one minute per JEDEC/IEC standards. This rating confirms reinforced insulation integrity and supports use in grounded-chassis industrial equipment without additional barrier materials.

What package type does FS10KM-06-AV#B01 use, and is the drain electrically connected to the tab?

FS10KM-06-AV#B01 uses the TO-220FN (Full-Nib) package, where the metal tab is electrically connected to the drain terminal. This configuration enables direct heatsink mounting while requiring electrical isolation (e.g., mica pad or insulating hardware) unless the heatsink is floating or referenced to drain potential.

What is the gate-source threshold voltage range for FS10KM-06-AV#B01, and how does it affect drive requirements?

The gate-source threshold voltage (VGS(th)) for FS10KM-06-AV#B01 is specified from 2.0 V (min) to 3.0 V (max) at ID = 1 mA. Full enhancement and minimal rDS(on) require VGS ≥ 10 V; therefore, logic-level microcontrollers must use gate drivers or level-shifters to ensure reliable switching and low conduction loss.

FS10KM-06-AV#B01 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

FS10KM-06-AV#B01 FAQ

1.How can I place an order for FS10KM-06-AV#B01 through Aetrix?

Please submit a Request for Quotation (RFQ) for FS10KM-06-AV#B01 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FS10KM-06-AV#B01 reliable?

The price and inventory of FS10KM-06-AV#B01 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS10KM-06-AV#B01 is usually 5 days.

3.What payment methods are accepted for FS10KM-06-AV#B01?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS10KM-06-AV#B01 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FS10KM-06-AV#B01?

FS10KM-06-AV#B01 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FS10KM-06-AV#B01 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FS10KM-06-AV#B01?

For technical support, including FS10KM-06-AV#B01 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS10KM-06-AV#B01 requirements.

6.How does Aetrix verify that FS10KM-06-AV#B01 is sourced from the original manufacturer or authorized distributors?

All FS10KM-06-AV#B01 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS10KM-06-AV#B01 meets industry standards.

7.What is the process for return or replacement of FS10KM-06-AV#B01?

All FS10KM-06-AV#B01 units undergo pre-shipment inspection (PSI). If there is an issue with FS10KM-06-AV#B01, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FS10KM-06-AV#B01 part is unused and in its original packaging.

Return procedure for FS10KM-06-AV#B01:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FS10KM-06-AV#B01 Tags

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