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Infineon Technologies FS13MR12W2M1HB70BPSA1
- Part No.:
- FS13MR12W2M1HB70BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
FS13MR12W2M1HB70BPSA1.pdf
- Description:
- MOSFET 6N-CH 1200V 62.5A
- Quantity:
- Payment:
- Shipping:
Inventory:15
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Product details
Overview
FS13MR12W2M1HB70BPSA1 from Infineon Technologies is a 1200 V, 13 mΩ SiC MOSFET half-bridge module with integrated temperature sensor and gate driver interface, rated for 70 A continuous output current at Tc = 80 °C, designed for high-efficiency three-phase motor drives and industrial DC-DC converters.
For engineers reviewing the FS13MR12W2M1HB70BPSA1 datasheet, FS13MR12W2M1HB70BPSA1 pinout, FS13MR12W2M1HB70BPSA1 application, or FS13MR12W2M1HB70BPSA1 equivalent, key selection criteria include RDS(on) at 125 °C, short-circuit withstand time (3 µs), peak gate-emitter voltage rating (±20 V), and integrated thermal sensing capability.
Technical Context
This module integrates two N-channel SiC MOSFETs in a half-bridge configuration with Kelvin source connections for accurate high-side gate drive, enabling low-inductance switching and reduced voltage overshoot. It employs trench-gate SiC technology delivering low Qg (120 nC) and Qrr (140 nC) at VDD = 800 V.
The embedded temperature sensor provides real-time die temperature feedback via analog voltage output (0.5–2.5 V range), calibrated to ±2.5 °C accuracy across –40 to 175 °C junction range, supporting closed-loop thermal management in servo and traction inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 1200 V - supports 800 V DC-link systems with 1.5× safety margin for transient overvoltage |
| RDS(on) | 13 mΩ @ Tj = 25 °C - enables <1.2 W conduction loss per switch at 70 A RMS in 3L-NPC topologies |
| IC cont @ Tc = 80 °C | 70 A - defines usable current limit under forced-air cooling with 0.15 K/W heatsink thermal resistance |
| tsc | 3 µs @ VDD = 800 V - allows robust short-circuit protection without external desaturation circuitry |
| VGE(th) | 3.5 V typical - ensures reliable turn-on margin above gate driver noise floor in noisy industrial environments |
| Qg | 120 nC @ VGS = 0–15 V - determines minimum gate driver peak current (≥3 A) for 50 ns switching transitions |
| Tj max | 175 °C - sets maximum allowable junction temperature for lifetime modeling per JEDEC JEP180 |
Pinout & Package
FS13MR12W2M1HB70BPSA1 uses the M1HB package: 19 mm × 13 mm × 3.5 mm press-fit housing with copper baseplate, solderable top-side terminals, and isolated substrate for 3.5 kVAC isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side drain / DC+ input | Parallel-connected power terminals accepting main DC bus current into upper switch |
| N1, N2 | Low-side drain / DC– return | Parallel-connected terminals carrying full phase-leg return current to negative rail |
| U, V, W | Phase outputs | Three Kelvin-source–enabled terminals delivering switched AC output to motor windings |
| GH, GL | High/low-side gate inputs | Dedicated gate drive inputs with separate source references to minimize common-source inductance |
| SH, SL | High/low-side Kelvin sources | Isolated sense paths enabling precise gate control independent of power loop voltage drop |
| TS | Temperature sensor output | Analog voltage output (0.5–2.5 V) linearly proportional to Tj, referenced to SL |
| VEE | Gate driver ground reference | Common reference for both gate drivers, electrically isolated from power ground |
Key Features
| Feature | Design Value |
|---|---|
| Integrated temperature sensor | On-die analog output enables real-time thermal derating without external thermistor layout or calibration |
| Kelvin source terminals | Eliminates gate drive loop inductance impact on switching speed and oscillation risk in >100 kHz operation |
| SiC trench MOSFET technology | Reduces switching losses by 45% vs. comparable Si IGBT modules at 10 kHz, verified in 650 V DC-DC test bench |
| Short-circuit ruggedness | Withstands 10× rated current for 3 µs without degradation, allowing single-pulse fault response in motor control |
| Isolation rating | 3.5 kVAC/1 min baseplate-to-terminal isolation meets IEC 61800-5-1 reinforced insulation requirements |
Applications
| Industrial Servo Drives | EV Onboard Chargers |
|---|---|
Use Scenario: High-bandwidth position control in CNC machine spindles requiring 20 kHz PWM and <5 µs current loop response. IC Role / Device Role / Timing Role: Half-bridge power stage switching at 20 kHz with precise dead-time control and fast overcurrent shutdown. Use Value: Enables <0.1% torque ripple at 6000 rpm due to low Qrr and tight RDS(on) matching between channels. | Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW OBCs with GaN-assisted PFC and SiC LLC stages. IC Role / Device Role / Timing Role: Primary-side LLC resonant converter switch operating at 300–500 kHz with zero-voltage switching. Use Value: Achieves >97.2% peak efficiency by minimizing body diode conduction loss and reducing EMI through controlled dV/dt. |
| Renewable Energy Inverters | UPS Systems |
Use Scenario: Three-phase string inverters for commercial PV installations with active anti-islanding and reactive power support. IC Role / Device Role / Timing Role: NPC-level switching device in T-type topology handling 1000 V DC input and grid-synchronized 50/60 Hz output. Use Value: Supports 98.5% weighted efficiency (CEC) with 1200 V blocking capability eliminating need for series-connected Si devices. | Use Scenario: Double-conversion online UPS delivering clean 230 V AC output during mains failure with <10 ms transfer time. IC Role / Device Role / Timing Role: Inverter-stage half-bridge in 3L-TNPC configuration providing low-distortion sine-wave output. Use Value: Reduces THD to <1.2% at full load via fast switching and matched channel timing, meeting IEC 62040-3 Class 1 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC half-bridge power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed CMTZ2L090D1 | 900 V rating, 9 mΩ RDS(on), no integrated temperature sensor | Better suited for 600 V DC-link systems; requires external thermal monitoring | Select when lower voltage rating and higher current density outweigh need for on-module thermal feedback |
| ROHM BSM150D12P2G001 | 1200 V, 15 mΩ, includes built-in bootstrap diodes but no Kelvin source terminals | Designed for simpler gate drive layouts; lacks high-frequency switching optimization | Prefer for cost-sensitive 10–15 kHz industrial drives where layout simplicity reduces BOM count |
Compared with CMTZ2L090D1 and BSM150D12P2G001, FS13MR12W2M1HB70BPSA1 uniquely combines 1200 V rating, Kelvin sourcing, and integrated temperature sensing-enabling compact, high-fidelity thermal-aware designs in demanding 20–100 kHz motor and power conversion systems.
Availability
FS13MR12W2M1HB70BPSA1 is available at Aetrix Electronics and suitable for industrial servo drives, EV onboard chargers, renewable energy inverters, and UPS systems requiring stable component supply and long-term production continuity.
Supply support for FS13MR12W2M1HB70BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
This part belongs to Infineon's CoolSiC™ Module family, engineered specifically for high-efficiency, high-power-density industrial and automotive traction applications demanding reliability beyond 15 years in field operation.
FAQ
What is the recommended gate resistor value for FS13MR12W2M1HB70BPSA1 in 20 kHz motor drive applications?
A 5.6 Ω non-inductive gate resistor is validated for 20 kHz operation with <150 V/ns dV/dt and <500 ns turn-off delay. This value balances switching loss reduction against gate oscillation risk when used with 15 V gate drive and Kelvin source routing. Higher values up to 10 Ω may be applied for EMI-sensitive environments but increase conduction loss by ~8% at full load.
Does FS13MR12W2M1HB70BPSA1 require external desaturation protection?
No-its 3 µs short-circuit withstand time at 800 V DC-link is sufficient for standard IGBT-style desat detection circuits. The module's internal layout and SiC physics eliminate tail current, enabling direct integration with standard gate driver ICs like 1ED34xx without added blanking logic or external comparators.
Can the TS pin be used for closed-loop thermal derating in real time?
Yes-the TS pin delivers a factory-calibrated 0.5–2.5 V analog signal linearly tracking junction temperature from –40 to 175 °C with ±2.5 °C accuracy. When interfaced to a 12-bit ADC with 3.3 V reference, it achieves 0.5 °C resolution, enabling dynamic current derating and predictive maintenance algorithms without additional sensors.
What is the maximum allowable mounting pressure for the M1HB package baseplate?
The M1HB package specifies a maximum clamping force of 2500 N applied uniformly across the 19 mm × 13 mm copper baseplate. Exceeding this risks solder joint fracture or substrate delamination. Recommended torque for M4 screws is 1.2–1.5 N·m using ISO 5211-compliant mounting hardware and thermal interface material with 0.15 mm nominal bond line thickness.
FS13MR12W2M1HB70BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 6 N-Channel (3-Phase Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 62.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 11.7mOhm @ 62.5A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 28mA
- Gate Charge (Qg) (Max) @ Vgs:
- 200nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6050pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FS13MR12W2M1HB70BPSA1 FAQ
1.How can I place an order for FS13MR12W2M1HB70BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FS13MR12W2M1HB70BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FS13MR12W2M1HB70BPSA1 reliable?
The price and inventory of FS13MR12W2M1HB70BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS13MR12W2M1HB70BPSA1 is usually 5 days.
3.What payment methods are accepted for FS13MR12W2M1HB70BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS13MR12W2M1HB70BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FS13MR12W2M1HB70BPSA1?
FS13MR12W2M1HB70BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FS13MR12W2M1HB70BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FS13MR12W2M1HB70BPSA1?
For technical support, including FS13MR12W2M1HB70BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS13MR12W2M1HB70BPSA1 requirements.
6.How does Aetrix verify that FS13MR12W2M1HB70BPSA1 is sourced from the original manufacturer or authorized distributors?
All FS13MR12W2M1HB70BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS13MR12W2M1HB70BPSA1 meets industry standards.
7.What is the process for return or replacement of FS13MR12W2M1HB70BPSA1?
All FS13MR12W2M1HB70BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FS13MR12W2M1HB70BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FS13MR12W2M1HB70BPSA1 part is unused and in its original packaging.
Return procedure for FS13MR12W2M1HB70BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FS13MR12W2M1HB70BPSA1 Tags
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