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Renesas FS30AS-2-T13#B00
- Part No.:
- FS30AS-2-T13#B00
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
FS30AS-2-T13#B00.pdf
- Description:
- HIGH SPEED SWITCHING N-CHANNEL
- Quantity:
- Payment:
- Shipping:
Inventory:9,000
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Product details
Overview
FS30AS-2-T13#B00 from Renesas Electronics is a high-speed N-channel power MOSFET designed for switching applications in motor control, lamp drivers, solenoid actuation, and DC-DC converters. It features a 100 V drain-source breakdown voltage (V(BR)DSS), 30 A continuous drain current (ID), 100 mΩ maximum on-resistance (rDS(ON)), integrated fast-recovery body diode with 95 ns reverse recovery time (trr), and operates with 10 V gate drive.
For engineers reviewing the FS30AS-2-T13#B00 datasheet, FS30AS-2-T13#B00 pinout, FS30AS-2-T13#B00 application, or FS30AS-2-T13#B00 equivalent, key selection criteria include its 35 W power dissipation at Tc = 25°C, 3.57 °C/W channel-to-case thermal resistance, 1250 pF input capacitance (Ciss), and MP-3A (SC-63) surface-mount package with dual-drain configuration.
Technical Context
This N-ch MOSFET uses planar vertical DMOS structure optimized for high-current, high-voltage switching with low conduction loss. Its gate threshold voltage (VGS(th)) ranges from 2.0 to 4.0 V, enabling compatibility with standard 10 V logic-level gate drivers. The integrated body diode supports freewheeling in inductive loads without external components.
Switching performance is characterized by 25 ns turn-on delay (td(on)), 60 ns rise time (tr), 60 ns turn-off delay (td(off)), and 50 ns fall time (tf) under 50 V/15 A test conditions with 50 Ω gate resistance. Thermal design relies on direct case mounting due to its low Rth(ch–c) of 3.57 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche; suitable for 48 V industrial bus and 24 V automotive-derived systems. |
| ID (continuous) | 30 A - Sustained load current capability at Tc = 25°C; derates linearly above 25°C case temperature. |
| rDS(ON) (max) | 100 mΩ - On-state resistance at ID = 15 A, VGS = 10 V; determines conduction loss and junction heating under load. |
| trr (typ) | 95 ns - Reverse recovery time of integrated body diode; critical for minimizing switching loss in hard-commutated inductive circuits. |
| Ciss | 1250 pF - Input capacitance at VDS = 10 V; defines gate drive energy requirement and influences switching speed vs. gate resistance. |
| Rth(ch–c) | 3.57 °C/W - Channel-to-case thermal resistance; enables calculation of junction temperature rise from measured case temperature. |
| VGS(th) | 2.0–4.0 V - Gate threshold range; ensures reliable turn-on with 5 V logic-compatible drivers when used with sufficient overdrive margin. |
Pinout & Package
FS30AS-2-T13#B00 is housed in the MP-3A (JEITA SC-63) surface-mount package, featuring a thermally enhanced 4-pin layout with dual drain terminals for reduced source inductance and improved current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires 10 V drive for full enhancement; gate leakage ≤ ±0.1 µA at ±20 V. |
| 2 & 4 | Drain | High-side power output node; electrically common; dual pins reduce current density and parasitic inductance. |
| 3 | Source | Power return path and reference for gate drive; connects to PCB ground plane for thermal and EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated fast-recovery body diode | 95 ns trr enables efficient freewheeling in buck, flyback, and H-bridge topologies without external diode. |
| Low rDS(ON) at 10 V drive | 69 mΩ typical resistance reduces conduction loss in high-duty-cycle switching applications. |
| High avalanche energy rating | 30 A pulsed avalanche current (IDA) with L = 100 µH supports robust operation during transient overloads. |
| Thermally optimized package | MP-3A construction delivers 3.57 °C/W Rth(ch–c), allowing >25 W dissipation with moderate heatsinking. |
| Surface-mount taping format | T13 tape-and-reel packaging (3000 pcs/reel) supports automated SMT assembly for high-volume production. |
Applications
| Motor Control | Lamp Control |
|---|---|
Use Scenario: Driving brushed DC motors in industrial actuators and HVAC dampers requiring bidirectional PWM control. IC Role / Device Role / Timing Role: High-side or low-side switching element handling 24–48 V, 10–25 A peak currents with <60 ns switching transitions. Use Value: Low rDS(ON) minimizes I²R losses during 100% duty cycle stall conditions; integrated diode eliminates need for external flyback component. |
Use Scenario: Dimming and switching of high-intensity incandescent and halogen lamps in architectural and stage lighting systems. IC Role / Device Role / Timing Role: Power switch in phase-cut or PWM-based lamp driver stages operating up to 100 V AC peak. Use Value: 100 V VDSS withstands line transients; fast tr/tf enables clean dimming waveforms with minimal EMI generation. |
| Solenoid Control | DC-DC Converters |
Use Scenario: Energizing 24 V/48 V solenoids in fluid control valves and pneumatic actuators with rapid on/off cycling. IC Role / Device Role / Timing Role: Low-side switch managing inductive kickback via integrated diode; handles 30 A surge currents during pull-in. Use Value: 95 ns trr limits voltage overshoot during turn-off; 120 A pulsed drain current (IDM) accommodates solenoid inrush. |
Use Scenario: Primary-side switch in non-isolated buck regulators and isolated forward converters delivering 5–24 V outputs at >10 A. IC Role / Device Role / Timing Role: Main power switch operating at 100–500 kHz with 10 V gate drive and synchronous rectification support. Use Value: Ciss = 1250 pF and Crss = 105 pF enable predictable gate drive sizing; low Qg (implied by fast td(on)/td(off)) reduces driver loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NF10 | 100 V VDSS, 30 A ID, 100 mΩ rDS(ON), TO-220 package, no integrated diode | Requires external fast-recovery diode; higher thermal resistance (Rth(j–c) ≈ 2.5 °C/W but larger footprint) | Preferred where through-hole mounting and higher single-pulse avalanche energy are prioritized over board space. |
| IRF540NPBF | 100 V VDSS, 33 A ID, 44 mΩ rDS(ON), TO-220 package, no integrated diode | Lower on-resistance but lacks body diode optimization; slower trr (~200 ns) increases switching loss in inductive loads | Selected when lowest conduction loss dominates and external diode selection allows tuning of recovery behavior. |
Compared with STP30NF10 and IRF540NPBF, FS30AS-2-T13#B00 offers superior integration (integrated 95 ns diode), compact MP-3A surface-mount form factor, and optimized switching timing for high-frequency inductive switching-making it preferable for space-constrained, high-reliability motor and solenoid control designs.
Availability
FS30AS-2-T13#B00 is available at Aetrix Electronics and suitable for motor control, lamp control, and DC-DC converter applications requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.
Supply support for FS30AS-2-T13#B00 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The FS30AS-2-T13#B00 belongs to Renesas' legacy high-speed power MOSFET product line, engineered specifically for rugged, high-current switching in industrial automation, power supplies, and electromechanical control systems.
FAQ
What is the maximum continuous drain current rating for FS30AS-2-T13#B00?
The FS30AS-2-T13#B00 has a maximum continuous drain current (ID) of 30 A at case temperature (Tc) = 25°C. This rating decreases linearly with increasing case temperature, reaching zero at Tc = 150°C, per the derating curve in the official Renesas datasheet REJ03G1411-0300 Rev.3.00.
Does FS30AS-2-T13#B00 include an integrated body diode, and what is its reverse recovery time?
Yes, FS30AS-2-T13#B00 integrates a fast-recovery body diode with a typical reverse recovery time (trr) of 95 ns, measured at IS = 30 A and di/dt = –100 A/µs. This diode is optimized for inductive switching applications such as motor and solenoid control, reducing need for external freewheeling components.
What package type and pin configuration does FS30AS-2-T13#B00 use?
FS30AS-2-T13#B00 uses the MP-3A package (JEITA SC-63), a surface-mount 4-pin outline with pins 1 = Gate, 2 & 4 = Drain (common), and 3 = Source. Its RENESAS package code is PRSS0004ZG-A, and it weighs 0.32 g with defined mechanical dimensions per page 6 of REJ03G1411-0300.
What is the gate threshold voltage range for FS30AS-2-T13#B00, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for FS30AS-2-T13#B00 is specified from 2.0 V (min) to 4.0 V (max) at ID = 1 mA and VDS = 10 V. This range confirms compatibility with 5 V logic-level drivers, though full enhancement and low rDS(ON) require 10 V gate drive as specified in the datasheet.
How does the thermal resistance of FS30AS-2-T13#B00 impact heatsink design?
FS30AS-2-T13#B00 has a channel-to-case thermal resistance (Rth(ch–c)) of 3.57 °C/W. This value directly links junction temperature rise to case temperature: ΔTj–c = PD × 3.57. Effective heatsinking must maintain case temperature below 100°C to keep junction within the –55°C to +150°C operational limit under 35 W max power dissipation.
FS30AS-2-T13#B00 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1250 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MP-3A
FS30AS-2-T13#B00 FAQ
1.How can I place an order for FS30AS-2-T13#B00 through Aetrix?
Please submit a Request for Quotation (RFQ) for FS30AS-2-T13#B00 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FS30AS-2-T13#B00 reliable?
The price and inventory of FS30AS-2-T13#B00 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS30AS-2-T13#B00 is usually 5 days.
3.What payment methods are accepted for FS30AS-2-T13#B00?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS30AS-2-T13#B00 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FS30AS-2-T13#B00?
FS30AS-2-T13#B00 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FS30AS-2-T13#B00 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FS30AS-2-T13#B00?
For technical support, including FS30AS-2-T13#B00 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS30AS-2-T13#B00 requirements.
6.How does Aetrix verify that FS30AS-2-T13#B00 is sourced from the original manufacturer or authorized distributors?
All FS30AS-2-T13#B00 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS30AS-2-T13#B00 meets industry standards.
7.What is the process for return or replacement of FS30AS-2-T13#B00?
All FS30AS-2-T13#B00 units undergo pre-shipment inspection (PSI). If there is an issue with FS30AS-2-T13#B00, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FS30AS-2-T13#B00 part is unused and in its original packaging.
Return procedure for FS30AS-2-T13#B00:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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