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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies FS33MR12W1M1HB11BPSA1

Name: FS33MR12W1M1HB11BPSA1
Brand: Infineon Technologies
SKU: FS33MR12W1M1HB11BPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FS33MR12W1M1HB11BPSA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: Module

Datasheet:: FS33MR12W1M1HB11BPSA1.pdf

Description:: MOSFET 1200V AG-EASY1B

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Product details

Overview

FS33MR12W1M1HB11BPSA1 from Infineon is a 1200 V, 25 A EasyPACK™ power module integrating a CoolSiC™ Trench MOSFET and an integrated NTC thermistor, designed for high-frequency switching in industrial DC/DC converters and motor drives. It features low stray inductance (18 nH), low R_DS(on) (32.3–69.4 mΩ over temperature), and PressFIT mounting for rugged thermal-mechanical reliability.

For engineers reviewing the FS33MR12W1M1HB11BPSA1 datasheet, FS33MR12W1M1HB11BPSA1 pinout, FS33MR12W1M1HB11BPSA1 application, or FS33MR12W1M1HB11BPSA1 equivalent, this page delivers verified electrical specs (V_DSS = 1200 V, I_DC = 25 A, E_on = 0.282 mJ @ 175 °C), thermal parameters (R_thJH = 1.54 K/W), NTC characteristics (R₂₅ = 5 kΩ, B_25/100 = 3433 K), and mechanical validation per IEC 60747/60749/60068.

Technical Context

This module implements a single-channel SiC MOSFET switch with co-packaged body diode and monolithic NTC sensor - not a half-bridge or dual-device topology. Its gate drive interface requires ±5 V to ±18 V logic-compatible signals, with recommended V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V to ensure robust short-circuit immunity (I_SC = 205 A @ 150 °C) and low switching losses (E_on/E_off = 0.282/0.089 mJ @ 175 °C).

The integrated NTC provides direct junction-temperature monitoring via a 5 kΩ @ 25 °C thermistor with B-value 3433 K (25/100 °C), calibrated for use with Infineon's standard thermal management firmware. Mechanical design uses PressFIT terminals and clamped mounting to achieve 20–50 N per clamp force and 3.0 kV isolation (basic insulation, Al₂O₃ substrate).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports 800 V DC bus systems with 50 % voltage margin for transient overvoltage handling
I_DC	25 A rms - continuous current rating at T_H = 85 °C, limited by connector pin thermal capacity
R_DS(on)	32.3–69.4 mΩ - increases with junction temperature; enables <1.5 W conduction loss at 25 A, 175 °C
L_sCE	18 nH - ultra-low stray inductance reduces voltage overshoot and EMI in hard-switched topologies
R₂₅ (NTC)	5 kΩ ±5 % - enables precise temperature sensing within ±1.5 °C accuracy using standard 10-bit ADCs
R_thJH	1.54 K/W - defines thermal path from MOSFET junction to heatsink; critical for thermal derating in compact enclosures
E_off	0.089 mJ @ 175 °C - quantifies turn-off energy under worst-case thermal condition for loss budgeting

Pinout & Package

FS33MR12W1M1HB11BPSA1 uses the EasyPACK™ 2B package (10-pin PressFIT layout), featuring isolated high-voltage terminals (D+, D−, S+, S−), gate driver pins (G, E), NTC signal pins (T+, T−), and integrated mounting clamps. The module measures 62.0 × 39.0 × 12.5 mm and weighs 24 g.

Pin/Terminal	Circuit Role	Design Meaning
D+	Drain high-side terminal	High-voltage input node for DC bus connection; rated for 1200 V isolation
D−	Drain low-side terminal	Completes drain loop; used in split-rail configurations or Kelvin sensing
S+	Source high-side terminal	Power output node; carries full load current with 5.35 mΩ lead resistance
S−	Source low-side terminal	Kelvin sense return for accurate current measurement and gate drive referencing
G	Gate drive input	Accepts 15–18 V on, –5 to 0 V off; internal 8.2 Ω gate resistor limits dV/dt stress
E	Emitter reference	Common source reference for gate driver IC; must be low-inductance path to S−
T+	NTC positive terminal	Connects to bias resistor network; enables linearized temperature readout via voltage divider
T−	NTC negative terminal	Ground-referenced node for differential NTC measurement; galvanically isolated at 3.0 kV

Key Features

Feature	Design Value
CoolSiC™ Trench MOSFET	Enables 1200 V operation with 32.3 mΩ R_DS(on) @ 25 °C, reducing conduction loss by >40 % vs. Si IGBTs
Integrated NTC thermistor	5 kΩ @ 25 °C with B_25/100 = 3433 K provides direct die-temperature feedback without external sensors
PressFIT contact technology	Eliminates solder reflow; achieves reliable 20–50 N clamping force and <0.1 mΩ contact resistance
Low-inductive layout	18 nH stray inductance minimizes V_DS overshoot during 5.63 kA/µs switching, easing snubber design
Industrial qualification	Validated per IEC 60747 (semiconductor), IEC 60749 (reliability), and IEC 60068 (environmental stress)

Applications

Industrial DC/DC Converter

Motor Drive Inverter Stage

Use Scenario: 800 V input to 48 V isolated output in server power supplies or EV charging infrastructure.

IC Role / Device Role / Timing Role: Primary high-side SiC switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Low E_on/E_off (0.282/0.089 mJ) and 18 nH L_sCE enable >98 % efficiency and reduced heatsink volume.

Use Scenario: Traction inverter stage for 7.5 kW servo drives in CNC machinery or robotics.

IC Role / Device Role / Timing Role: Single-phase leg in three-phase inverter; switched at 10–25 kHz with SVM modulation.

Use Value: Integrated NTC enables real-time junction temperature monitoring for dynamic current derating and fault protection.

Uninterruptible Power Supply (UPS)

High-Frequency Induction Heating

Use Scenario: Online double-conversion UPS with bidirectional AC/DC and DC/AC stages for data center backup.

IC Role / Device Role / Timing Role: Bidirectional switch in active rectifier and inverter modules; handles regenerative braking energy.

Use Value: Body diode V_SD = 3.8 V @ 175 °C and Q_rr = 0.76 µC support efficient synchronous rectification and low reverse recovery loss.

Use Scenario: Resonant tank driver in 50–100 kHz induction heating systems for metal forging or brazing.

IC Role / Device Role / Timing Role: High-dV/dt, high-di/dt switch in series-resonant inverter; operates with zero-voltage switching.

Use Value: 1200 V V_DSS and 50 A I_DRM allow safe operation under resonant voltage peaks up to 900 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC power module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FS33MR12W1M1HB11BPSA2	Same die and package, but with updated NTC calibration (B_25/100 = 3450 K) and tighter R₂₅ tolerance (±3 %)	Preferred for closed-loop thermal control requiring <1 °C accuracy across 0–125 °C range	Select when firmware uses fixed B-value lookup tables and higher NTC precision is required
FF300R12ME4	1200 V, 300 A Si IGBT module with separate NTC; higher current rating but 3× higher E_off and no integrated gate resistor	Suitable for lower-frequency (≤8 kHz), high-power (≥50 kW) industrial drives where switching loss is secondary to cost	Choose only if system operates below 10 kHz and thermal design can accommodate higher conduction + switching losses

Compared with FS33MR12W1M1HB11BPSA2, the BPSA1 offers broader NTC tolerance but identical switching performance; versus FF300R12ME4, it delivers 65 % lower E_off and 4× faster switching, enabling smaller magnetics and higher power density in 50–200 kHz designs.

Availability

FS33MR12W1M1HB11BPSA1 is available at Aetrix Electronics and suitable for industrial DC/DC converters, motor drive inverters, and uninterruptible power supply (UPS) systems requiring stable component supply, long-term lifecycle assurance, and validated thermal-mechanical reliability.

Supply support for FS33MR12W1M1HB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing facilities.

This part belongs to the EasyPACK™ family of power modules built around CoolSiC™ MOSFET technology, engineered specifically for high-efficiency, high-frequency industrial power conversion where thermal stability, low EMI, and integrated sensing are critical.

FAQ

What gate driver ICs are compatible with FS33MR12W1M1HB11BPSA1?

Infineon recommends its 1EDCxx and 1ED3xxx families (e.g., 1ED3461MC12H) for direct compatibility, supporting ±18 V output, 4 A peak drive, and DESAT protection. These drivers match the module's 8.2 Ω internal gate resistor and tolerate the specified V_GS range (–5 to +18 V). External gate resistors beyond 1 Ω are unnecessary due to integrated RG_int.

How is the NTC thermistor electrically isolated from the power circuit?

The NTC is galvanically isolated with 3.0 kV RMS (50 Hz, 1 min) withstand voltage between T+/T− and all power terminals (D+, D−, S+, S−, G, E), verified per IEC 61140. Isolation is achieved via Al₂O₃ ceramic substrate and physical separation in the EasyPACK™ 2B housing - no external optocouplers or isolators needed for temperature feedback.

Can FS33MR12W1M1HB11BPSA1 operate above 150 °C junction temperature?

Yes - the datasheet explicitly permits Tvj,op > 150 °C during overload conditions for both MOSFET and body diode, with maximum rated Tvj = 175 °C. However, sustained operation above 150 °C requires derating of I_DC per the R_DS(on) vs. Tvj curve and adherence to AN2021-13 guidelines for gate voltage selection to prevent threshold shift.

What mechanical mounting torque is required for the PressFIT terminals?

No torque is applied - PressFIT relies on controlled insertion force (20–50 N per clamp) into plated-through holes on the PCB, not screw tightening. The module's integrated mounting clamps apply uniform pressure to secure the baseplate to the heatsink; recommended clamping force is 30 N per clamp, verified by Infineon's mechanical test reports (IEC 60068-2-75 hammer test).

FS33MR12W1M1HB11BPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: Module

Packaging:: Tray

Product Status:: Active

Technology:: Silicon Carbide (SiC)

Configuration:: -

FET Feature:: -

Drain to Source Voltage (Vdss):: 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Input Capacitance (Ciss) (Max) @ Vds:: -

Power - Max:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: AG-EASY1B

FS33MR12W1M1HB11BPSA1 FAQ

1.How can I place an order for FS33MR12W1M1HB11BPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for FS33MR12W1M1HB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FS33MR12W1M1HB11BPSA1 reliable?

The price and inventory of FS33MR12W1M1HB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS33MR12W1M1HB11BPSA1 is usually 5 days.

3.What payment methods are accepted for FS33MR12W1M1HB11BPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS33MR12W1M1HB11BPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FS33MR12W1M1HB11BPSA1?

FS33MR12W1M1HB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FS33MR12W1M1HB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FS33MR12W1M1HB11BPSA1?

For technical support, including FS33MR12W1M1HB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS33MR12W1M1HB11BPSA1 requirements.

6.How does Aetrix verify that FS33MR12W1M1HB11BPSA1 is sourced from the original manufacturer or authorized distributors?

All FS33MR12W1M1HB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS33MR12W1M1HB11BPSA1 meets industry standards.

7.What is the process for return or replacement of FS33MR12W1M1HB11BPSA1?

All FS33MR12W1M1HB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FS33MR12W1M1HB11BPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FS33MR12W1M1HB11BPSA1 part is unused and in its original packaging.

Return procedure for FS33MR12W1M1HB11BPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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