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Renesas FS50KM-06-AX#E51
- Part No.:
- FS50KM-06-AX#E51
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
FS50KM-06-AX#E51.pdf
- Description:
- DISCRETE / POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:522
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Product details
Overview
FS50KM-06-AX#E51 from Renesas Electronics is an N-channel power MOSFET designed for high-speed switching in industrial power control circuits, featuring 60 V VDSS, 22 mΩ max rDS(ON) at 10 V gate drive, 50 A continuous drain current, integrated fast-recovery body diode (65 ns), and 2000 V isolation voltage. It targets motor drives, DC-DC converters, and solenoid/lamp control where robust thermal performance and low conduction loss are critical.
For engineers reviewing the FS50KM-06-AX#E51 datasheet, FS50KM-06-AX#E51 pinout, FS50KM-06-AX#E51 application, or FS50KM-06-AX#E51 equivalent, this page delivers verified package mapping (TO-220FN), validated terminal roles, confirmed switching timing (td(on) = 35 ns, tf = 80 ns), thermal resistance (Rth(ch–c) = 4.17 °C/W), and real-world alternative options with documented functional trade-offs.
Technical Context
This device uses a planar vertical DMOS structure optimized for low rDS(ON) and fast switching, with gate threshold voltage tightly specified (2.0–4.0 V) and forward transfer admittance of 32 S at 25 A/10 V. Its integrated body diode supports synchronous rectification and inductive load commutation without external diode addition.
The TO-220FN package provides isolated mounting via its insulated case (Viso = 2000 V AC/1 min), enabling direct heatsink attachment while maintaining galvanic separation between drain and thermal path - essential for grounded-source topologies in off-line SMPS and motor inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin. |
| rDS(ON) (max) | 22 mΩ at VGS = 10 V, ID = 25 A - Enables <0.55 V conduction drop at rated current, minimizing I²R losses. |
| ID (cont) | 50 A at Tc = 25°C - Supports high-current loads when paired with adequate heatsinking. |
| trr | 65 ns typical - Fast body diode recovery reduces switching loss and EMI in hard-switched topologies. |
| Rth(ch–c) | 4.17 °C/W - Allows 30 W dissipation with ≤125°C channel rise above 25°C case temperature. |
| Ciss | 2300 pF - Gate input capacitance impacts driver strength requirements and turn-on speed. |
| td(off) | 95 ns - Critical for dead-time calculation in half-bridge configurations to prevent shoot-through. |
Pinout & Package
FS50KM-06-AX#E51 is housed in the TO-220FN package (Renesas code PRSS0003AB-A), featuring full electrical isolation between the drain-connected tab and all leads, enabling safe mounting to grounded heatsinks without insulating hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level gate drive; threshold range 2.0–4.0 V ensures compatibility with standard microcontroller outputs. |
| 2 (Drain) | Main current sink | Connected to internal die backside and isolated metal tab; must be electrically isolated from heatsink unless referenced to same potential. |
| 3 (Source) | Current return path | Common reference for gate drive and load return; defines local ground for driver circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated fast-recovery body diode | 65 ns reverse recovery time enables efficient inductive load switching without external diode. |
| Isolated package (Viso = 2000 V) | Allows direct mounting to grounded heatsinks in high-side or floating-source configurations without insulation pads. |
| Low gate charge (Qg ≈ 70 nC typical) | Reduces driver power consumption and enables higher-frequency operation up to ~100 kHz. |
| High avalanche energy rating | IDA = 50 A pulsed (L = 100 µH) supports robustness against inductive kickback in motor/solenoid drivers. |
| Thermal stability | rDS(ON) increases only ~1.2× from 25°C to 125°C - maintains predictable conduction loss across operating range. |
Applications
| Motor Control | Lamp Control |
|---|---|
Use Scenario: Brushed DC motor H-bridge driver in industrial automation systems requiring bidirectional torque and regenerative braking. IC Role / Device Role / Timing Role: High-side and low-side N-ch switch handling 48 V/30 A peak currents with fast turn-off to minimize cross-conduction. Use Value: Integrated 65 ns body diode enables efficient freewheeling during PWM off-time, reducing heat generation and eliminating discrete diode count. | Use Scenario: High-power LED array dimming in architectural lighting systems using constant-current buck regulation. IC Role / Device Role / Timing Role: Low-side switch modulating 50 A DC load at 1–20 kHz with minimal conduction loss and thermal drift. Use Value: 22 mΩ rDS(ON) limits voltage drop to <1.1 V at full load, preserving >97% efficiency in the power stage. |
| DC-DC Converters | Solenoid Drivers |
Use Scenario: Primary-side switch in isolated 48 V input, 12 V output flyback converter for telecom power supplies. IC Role / Device Role / Timing Role: 60 V-rated MOSFET handling 300 V spike transients with 2000 V isolation ensuring safety compliance. Use Value: 4.17 °C/W thermal resistance allows stable 30 W operation with passive heatsinking, simplifying thermal design. | Use Scenario: 24 V solenoid actuator control in vending machines and fluid control valves requiring rapid on/off cycling. IC Role / Device Role / Timing Role: Single-ended switch managing 50 A inrush and sustaining 25 A hold current with controlled turn-off to suppress arcing. Use Value: 95 ns turn-off delay and 80 ns fall time enable precise pulse-width control down to 10 µs resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V, 55 A, 14 mΩ rDS(ON), TO-220, non-isolated | Lacks 2000 V isolation; requires insulating pad for grounded heatsink use | Preferred where lower RDS(ON) justifies added thermal interface complexity and isolation is managed externally. |
| IXTP50N06T | 60 V, 50 A, 18 mΩ rDS(ON), TO-220AB, non-isolated | No integrated fast diode; trr not specified - may require external Schottky for snubberless inductive switching | Chosen when cost sensitivity outweighs need for integrated diode, and layout permits discrete diode placement. |
Compared with STP55NF06L and IXTP50N06T, FS50KM-06-AX#E51 trades slightly higher rDS(ON) for built-in isolation and fast diode - eliminating insulator hardware and reducing BOM count in space-constrained industrial controls.
Availability
FS50KM-06-AX#E51 is available at Aetrix Electronics and suitable for motor control, lamp control, and DC-DC converter designs requiring stable component supply, long-term industrial lifecycle support, and guaranteed traceable sourcing.
Supply support for FS50KM-06-AX#E51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The FS50KM-06-AX#E51 belongs to Renesas' high-speed power MOSFET product line, engineered specifically for ruggedized industrial switching applications demanding reliability, thermal resilience, and integrated safety features like reinforced isolation.
FAQ
What is the maximum continuous drain current rating for FS50KM-06-AX#E51?
The FS50KM-06-AX#E51 is rated for 50 A continuous drain current (ID) at case temperature Tc = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature - dropping to approximately 25 A at Tc = 100°C per the power dissipation derating curve. The device also supports 200 A pulsed drain current (IDM) for short durations.
Does FS50KM-06-AX#E51 include an integrated body diode, and what is its recovery time?
Yes, FS50KM-06-AX#E51 integrates a fast-recovery body diode with a typical reverse recovery time (trr) of 65 ns under test conditions of IS = 50 A and di/dt = –100 A/µs. This diode is optimized for inductive load commutation and reduces need for external freewheeling diodes in motor and solenoid drivers.
What is the isolation voltage rating of FS50KM-06-AX#E51, and how is it implemented?
The FS50KM-06-AX#E51 features a 2000 V AC isolation voltage (Viso) rated for 1 minute between terminals and case. This is achieved via the TO-220FN package's molded insulation layer separating the drain-connected metal tab from leadframe and leads - enabling safe direct mounting to grounded heatsinks without additional insulators.
What gate drive voltage is required for full enhancement of FS50KM-06-AX#E51?
The FS50KM-06-AX#E51 is specified for full enhancement at VGS = 10 V, delivering its rated rDS(ON) of 22 mΩ max. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, making it compatible with standard 5 V or 3.3 V logic-level drivers when operated in linear or partially enhanced regions - though full conduction requires 10 V.
How does the thermal resistance of FS50KM-06-AX#E51 affect heatsink selection?
With a channel-to-case thermal resistance (Rth(ch–c)) of 4.17 °C/W, FS50KM-06-AX#E51 dissipates up to 30 W at Tc = 25°C. To maintain Tch ≤ 150°C at 30 W, total system thermal resistance (case-to-ambient) must be ≤ 3.33 °C/W - guiding heatsink size and airflow requirements. Lower ambient temperatures or forced cooling significantly increase usable power headroom.
FS50KM-06-AX#E51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FS50KM-06-AX#E51 FAQ
1.How can I place an order for FS50KM-06-AX#E51 through Aetrix?
Please submit a Request for Quotation (RFQ) for FS50KM-06-AX#E51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FS50KM-06-AX#E51 reliable?
The price and inventory of FS50KM-06-AX#E51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS50KM-06-AX#E51 is usually 5 days.
3.What payment methods are accepted for FS50KM-06-AX#E51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS50KM-06-AX#E51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FS50KM-06-AX#E51?
FS50KM-06-AX#E51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FS50KM-06-AX#E51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FS50KM-06-AX#E51?
For technical support, including FS50KM-06-AX#E51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS50KM-06-AX#E51 requirements.
6.How does Aetrix verify that FS50KM-06-AX#E51 is sourced from the original manufacturer or authorized distributors?
All FS50KM-06-AX#E51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS50KM-06-AX#E51 meets industry standards.
7.What is the process for return or replacement of FS50KM-06-AX#E51?
All FS50KM-06-AX#E51 units undergo pre-shipment inspection (PSI). If there is an issue with FS50KM-06-AX#E51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FS50KM-06-AX#E51 part is unused and in its original packaging.
Return procedure for FS50KM-06-AX#E51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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