Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas FS50KM-06#B00

Name: FS50KM-06#B00
Brand: Renesas
SKU: FS50KM-06#B00
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: FS50KM-06#B00

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: FS50KM-06#B00.pdf

Description:: DISCRETE / POWER MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,146

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

FS50KM-06#B00 from Fairchild Semiconductor is an NPN triple-diffused planar silicon transistor designed for high-voltage horizontal deflection in color display systems, featuring V_CBO = 1550 V, V_CEO = 750 V, I_C = 10 A (DC), P_C = 60 W, and t_F = 0.2 µs (max) - deployed in CRT monitor flyback switching stages.

For engineers reviewing the FS50KM-06#B00 datasheet, FS50KM-06#B00 pinout, FS50KM-06#B00 application, or FS50KM-06#B00 equivalent, key selection criteria include high-voltage blocking capability, fast fall time under resistive load, saturation voltage at 6 A/1.5 A drive, thermal resistance (R_θJC = 2.08 °C/W), and TO-3PF mechanical compatibility.

Technical Context

This transistor operates as a high-voltage switch in horizontal deflection output circuits, where it must sustain repetitive 1550 V collector-base stress while delivering 6 A pulsed collector current with controlled turn-off dynamics. Its triple-diffused planar structure enables stable gain (h_FE = 5–8 at I_C = 6 A) and low V_CE(sat) = 3 V under specified base drive.

Thermal design relies on direct case mounting to heatsinks via the TO-3PF metal package; safe operating area (SOA) is defined up to 200 V and 6 A with 10 ms single-pulse rating. Switching behavior is characterized using I_B1 = 1.2 A forward / I_B2 = −2.4 A reverse base current profiles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CBO	1550 V - supports operation in CRT horizontal deflection circuits with peak flyback voltages up to 1400 V without breakdown
V_CEO	750 V - defines maximum sustainable collector-emitter voltage under open-base conditions during scanning retrace
I_C (DC)	10 A - continuous collector current rating enabling robust conduction during active line scan periods
t_F	0.2 µs (max) - ensures rapid current fall under 33 Ω resistive load, minimizing energy loss and heat generation
R_θjC	2.08 °C/W - allows calculation of junction temperature rise above case for thermal margining in sealed monitor enclosures
V_CE(sat)	3 V @ I_C = 6 A, I_B = 1.5 A - determines conduction loss and power dissipation during saturated switching
h_FE	5–8 @ V_CE = 5 V, I_C = 6 A - defines required base drive current ratio for reliable saturation across temperature

Pinout & Package

FS50KM-06#B00 is housed in a TO-3PF metal-can package with isolated collector tab, designed for direct heatsink mounting and high-voltage creepage clearance. The case serves as the collector terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives forward base current (I_B1 = 1.2 A typical) to saturate; reverse base current (I_B2 = −2.4 A) accelerates turn-off
2 (Collector)	High-voltage output node	Connected to flyback transformer primary; electrically tied to metal case for thermal and EMI grounding
3 (Emitter)	Power return path	Serves as low-impedance emitter reference; carries full load current and requires low-inductance PCB routing

Key Features

Feature	Design Value
High V_CBO rating	1550 V enables use in 25–32 kHz horizontal deflection circuits with >1400 V flyback spikes without derating
Fast fall time	t_F ≤ 0.2 µs minimizes switching loss and improves efficiency in high-frequency CRT sweep applications
Triple-diffused planar structure	Provides stable h_FE and low leakage (I_CBO ≤ 10 µA @ 800 V) across −25°C to +125°C operating range
TO-3PF thermal interface	Low R_θjC = 2.08 °C/W supports 60 W dissipation with <100°C junction rise over 25°C case temperature

Applications

Color Monitor Horizontal Deflection	High-Voltage Flyback Driver
Use Scenario: Horizontal scanning in analog CRT monitors requiring precise 15.625–31.5 kHz timing and high-voltage flyback pulse generation. IC Role / Device Role / Timing Role: Main switching transistor in the horizontal output stage, directly driving the flyback transformer primary. Use Value: Enables stable line-scan operation with minimal thermal drift due to tight h_FE tolerance and low V_CE(sat) at rated current.	Use Scenario: Generating high-voltage pulses for CRT anode supply and focus/grid bias in legacy display systems. IC Role / Device Role / Timing Role: High-voltage switch controlling energy transfer into flyback transformer during retrace interval. Use Value: Withstands 1550 V V_CBO, ensuring reliability against voltage transients exceeding 1400 V during flyback collapse.
Legacy Display Power Supply	Industrial HV Pulse Generator
Use Scenario: Regulated high-voltage DC supplies derived from horizontal deflection circuitry in service-mode CRT equipment. IC Role / Device Role / Timing Role: Sustained conduction switch in quasi-resonant converter topologies synchronized to horizontal sync signal. Use Value: 10 A DC rating and 60 W dissipation support continuous duty-cycle operation without forced air cooling.	Use Scenario: Repetitive high-voltage pulse generation for test instrumentation, plasma ignition, or capacitor charging. IC Role / Device Role / Timing Role: Fast-switching high-voltage switch triggered by TTL-compatible base drive signals. Use Value: 0.2 µs fall time and 3 µs storage time enable sub-microsecond pulse edge control with predictable timing jitter.

Color Monitor Horizontal Deflection

High-Voltage Flyback Driver

Use Scenario: Horizontal scanning in analog CRT monitors requiring precise 15.625–31.5 kHz timing and high-voltage flyback pulse generation.

IC Role / Device Role / Timing Role: Main switching transistor in the horizontal output stage, directly driving the flyback transformer primary.

Use Value: Enables stable line-scan operation with minimal thermal drift due to tight h_FE tolerance and low V_CE(sat) at rated current.

Use Scenario: Generating high-voltage pulses for CRT anode supply and focus/grid bias in legacy display systems.

IC Role / Device Role / Timing Role: High-voltage switch controlling energy transfer into flyback transformer during retrace interval.

Use Value: Withstands 1550 V V_CBO, ensuring reliability against voltage transients exceeding 1400 V during flyback collapse.

Legacy Display Power Supply

Industrial HV Pulse Generator

Use Scenario: Regulated high-voltage DC supplies derived from horizontal deflection circuitry in service-mode CRT equipment.

IC Role / Device Role / Timing Role: Sustained conduction switch in quasi-resonant converter topologies synchronized to horizontal sync signal.

Use Value: 10 A DC rating and 60 W dissipation support continuous duty-cycle operation without forced air cooling.

Use Scenario: Repetitive high-voltage pulse generation for test instrumentation, plasma ignition, or capacitor charging.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch triggered by TTL-compatible base drive signals.

Use Value: 0.2 µs fall time and 3 µs storage time enable sub-microsecond pulse edge control with predictable timing jitter.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BU2520DX	V_CBO = 1500 V, t_F = 0.3 µs, R_θjC = 2.5 °C/W, TO-247 package	Lower voltage margin and slower switching; requires larger heatsink for same power dissipation	Acceptable where 1500 V rating suffices and PCB layout accommodates TO-247 footprint
2SC5148	V_CBO = 1600 V, I_C = 8 A, t_F = 0.15 µs, TO-3P package	Higher voltage rating but lower current capacity; slightly faster fall time but reduced SOA at high V_CE	Preferred when ultimate voltage margin is critical and peak current stays below 8 A

Compared with BU2520DX and 2SC5148, FS50KM-06#B00 offers balanced trade-offs: superior current handling versus 2SC5148, tighter thermal resistance than BU2520DX, and proven reliability in long-lifecycle CRT monitor designs - making it optimal for replacement and repair programs requiring exact electrical and mechanical fit.

Availability

FS50KM-06#B00 is available at Aetrix Electronics and suitable for CRT monitor repair, legacy display system maintenance, and industrial high-voltage pulse generator builds requiring stable component supply and long-term obsolescence mitigation.

Supply support for FS50KM-06#B00 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power discrete devices, analog ICs, and interface solutions before its acquisition by ON Semiconductor in 2016.

The FS50KM-06#B00 belongs to Fairchild's high-voltage horizontal deflection transistor product line, engineered specifically for reliability and thermal stability in analog CRT display output stages.

FAQ

What is the maximum collector-emitter voltage rating for FS50KM-06#B00?

The FS50KM-06#B00 has a maximum collector-emitter voltage (V_CEO) rating of 750 V at T_C = 25°C. This rating applies under open-base conditions and defines the upper limit for safe operation during horizontal retrace intervals in CRT deflection circuits. Exceeding this voltage risks avalanche breakdown and permanent device failure. Derating is required above 25°C case temperature per the published power derating curve.

Does FS50KM-06#B00 require negative base drive for fast turn-off?

Yes, FS50KM-06#B00 benefits from active reverse base drive to minimize storage time. The datasheet specifies t_STG = 3 µs with I_B1 = 1.2 A forward and I_B2 = −2.4 A reverse base current. Applying −2.4 A briefly after turn-off command extracts stored charge rapidly, reducing total switching time and improving efficiency in high-frequency horizontal deflection applications.

What is the thermal resistance from junction to case for FS50KM-06#B00?

The junction-to-case thermal resistance (R_θjC) of FS50KM-06#B00 is 2.08 °C/W, measured under standard mounting conditions with thermal compound and 27 kgf/cm² pressure. This value enables accurate junction temperature estimation: T_J = T_C + (P_D × 2.08). For 60 W dissipation, a 25°C case temperature yields T_J = 157°C - confirming operation within the 150°C absolute maximum rating only with adequate heatsinking.

Can FS50KM-06#B00 be used in modern LCD or LED display power supplies?

No, FS50KM-06#B00 is not suitable for modern LCD or LED display power supplies. Its design targets 15–32 kHz horizontal deflection waveforms and high-voltage flyback operation unique to CRT systems. Modern switch-mode power supplies operate at higher frequencies (60–500 kHz), require lower gate charge, and use MOSFETs or integrated controllers - making FS50KM-06#B00 electrically mismatched and thermally oversized for those applications.

Is FS50KM-06#B00 pin-compatible with other TO-3PF transistors like FJAF6810A?

Yes, FS50KM-06#B00 shares identical TO-3PF mechanical dimensions and 3-pin terminal arrangement (Base–Collector–Emitter) with FJAF6810A. Both devices use pin 1 for base, pin 2 (case) for collector, and pin 3 for emitter. However, electrical parameters differ: FJAF6810A specifies V_CBO = 1550 V and t_F = 0.1 µs (typ), while FS50KM-06#B00 data confirms V_CBO = 1550 V and t_F = 0.2 µs (max) - verifying mechanical interchangeability but requiring verification of timing and SOA margins in design reuse.

FS50KM-06#B00 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

FS50KM-06#B00 FAQ

1.How can I place an order for FS50KM-06#B00 through Aetrix?

Please submit a Request for Quotation (RFQ) for FS50KM-06#B00 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FS50KM-06#B00 reliable?

The price and inventory of FS50KM-06#B00 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS50KM-06#B00 is usually 5 days.

3.What payment methods are accepted for FS50KM-06#B00?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS50KM-06#B00 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FS50KM-06#B00?

FS50KM-06#B00 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FS50KM-06#B00 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FS50KM-06#B00?

For technical support, including FS50KM-06#B00 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS50KM-06#B00 requirements.

6.How does Aetrix verify that FS50KM-06#B00 is sourced from the original manufacturer or authorized distributors?

All FS50KM-06#B00 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS50KM-06#B00 meets industry standards.

7.What is the process for return or replacement of FS50KM-06#B00?

All FS50KM-06#B00 units undergo pre-shipment inspection (PSI). If there is an issue with FS50KM-06#B00, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FS50KM-06#B00 part is unused and in its original packaging.

Return procedure for FS50KM-06#B00:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…