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Renesas FS50KM-2-J1#E51
- Part No.:
- FS50KM-2-J1#E51
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
FS50KM-2-J1#E51.pdf
- Description:
- DISCRETE / POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,522
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Product details
Overview
FS50KM-2-J1#E51 from Renesas Electronics is a high-speed N-channel power MOSFET designed for switching applications in motor control, lamp control, solenoid drivers, and DC-DC converters. It features 100 V VDSS, 50 A continuous drain current (ID), 55 mΩ maximum rDS(ON) at 10 V gate drive, integrated fast-recovery body diode (105 ns), and 2000 V isolation voltage (Viso).
For engineers reviewing the FS50KM-2-J1#E51 datasheet, FS50KM-2-J1#E51 pinout, FS50KM-2-J1#E51 application, or FS50KM-2-J1#E51 equivalent, this device is selected for high-current, medium-voltage industrial switching where thermal performance, avalanche ruggedness (50 A pulsed IDA), and low conduction loss are critical.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for high-speed switching with controlled gate charge (Qg = typ. 100 nC) and low Crss (185 pF), enabling efficient operation in hard-switched topologies up to several hundred kHz. Its TO-220FN package provides direct case-to-heatsink thermal path with Rth(ch–c) = 4.17 °C/W.
The device integrates a fast-recovery body diode (trr = 105 ns, di/dt = –100 A/µs) and supports unidirectional freewheeling in inductive loads. Gate threshold voltage (VGS(th) = 2.0–4.0 V) ensures compatibility with standard 10 V logic-level gate drivers while maintaining noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche; suitable for 48 V and 72 V bus systems with margin. |
| ID (continuous) | 50 A at Tc = 25°C - Sustained load current capability with heatsink; derates to zero at 150°C case temperature. |
| rDS(ON) (max) | 55 mΩ at VGS = 10 V, ID = 25 A - Conduction loss of ≤1.38 V drop at 25 A; enables <1.7 W static loss at rated current. |
| trr (body diode) | 105 ns - Fast reverse recovery minimizes switching loss and voltage overshoot during commutation in buck or half-bridge configurations. |
| Viso | 2000 V AC for 1 minute - Reinforced isolation between drain (power side) and case/heatsink; meets basic safety requirements for industrial equipment. |
| Qg (typ.) | 100 nC - Total gate charge determines driver strength requirement; compatible with common 1–2 A peak gate drivers. |
| Rth(ch–c) | 4.17 °C/W - Thermal resistance from channel to case enables 30 W dissipation with ≤125°C junction rise above 25°C case temperature. |
Pinout & Package
FS50KM-2-J1#E51 is housed in the TO-220FN package (Renesas code PRSS0003AB-A), featuring an isolated metal tab for direct heatsink mounting and enhanced creepage/clearance. The plastic body includes three leads: Gate, Drain, and Source - with Drain internally connected to the tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | High-impedance MOS gate requiring 10 V drive for full enhancement; sensitive to ESD and ringing. |
| 2 (Drain) | Main power terminal | Internally bonded to metal tab; electrically connected to heatsink - must be isolated unless system ground references drain. |
| 3 (Source) | Power return / reference node | Common return path for load current; defines local ground for gate drive; carries full 50 A continuous current. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated package | TO-220FN with 2000 V AC isolation enables safe mounting to grounded heatsinks without additional insulation. |
| Avalanche-rated | Rated for 50 A pulsed avalanche current (IDA) with L = 50 µH - withstands inductive energy dump without failure in motor/solenoid snubberless designs. |
| Fast body diode | 105 ns reverse recovery time reduces switching losses and EMI in synchronous rectification or freewheeling paths. |
| Low gate charge | Typical 100 nC total gate charge allows efficient high-frequency switching (>100 kHz) with moderate gate driver power. |
| Thermal robustness | Rated channel temperature range of –55°C to +150°C supports operation in harsh industrial environments with minimal derating. |
Applications
| Motor Control | Lamp Control |
|---|---|
Use Scenario: Driving brushed DC motors or stepper phase windings in industrial automation systems with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional current up to 50 A with fast turn-on/off for precise torque control. Use Value: Low rDS(ON) minimizes I²R heating during stall conditions; avalanche rating eliminates need for external flyback diodes. |
Use Scenario: Dimming and on/off control of high-intensity discharge (HID) and halogen lamps in commercial lighting fixtures. IC Role / Device Role / Timing Role: Main switching element in phase-cut or PWM-based lamp drivers operating from 100–277 VAC-derived DC buses. Use Value: 100 V VDSS provides margin over 72 V DC link; fast diode enables clean zero-crossing commutation in leading-edge dimmers. |
| Solenoid Control | DC-DC Converters |
Use Scenario: Actuating high-force solenoids in valve and braking systems used in factory machinery and HVAC controls. IC Role / Device Role / Timing Role: Low-side switch managing inductive loads with peak currents exceeding 100 A (pulsed IDM = 200 A). Use Value: Integrated fast diode clamps back-EMF without external components; 2000 V isolation prevents ground loop coupling in multi-solenoid arrays. |
Use Scenario: Primary-side switch in non-isolated buck or buck-boost converters delivering up to 300 W output in telecom and industrial power supplies. IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 100–500 kHz with gate drive synchronized to controller IC timing. Use Value: Optimized Ciss/Crss ratio (2300 pF / 185 pF) improves voltage-dependent switching behavior and reduces Miller-induced shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH50N10P | Same VDSS (100 V), higher rDS(ON) (65 mΩ max), no isolation rating, TO-247 package. | Lacks 2000 V isolation; requires insulating pad on heatsink; higher conduction loss increases thermal design burden. | Choose when board space permits larger TO-247 and isolation is managed externally. |
| STP55NF10 | Same VDSS (100 V), similar rDS(ON) (55 mΩ max), no isolation, TO-220FP (non-isolated) package. | No isolation voltage rating; drain not isolated from tab - mandates insulated mounting hardware in all cases. | Prefer when cost sensitivity outweighs isolation needs and heatsink isolation is already implemented. |
Compared with IXFH50N10P and STP55NF10, FS50KM-2-J1#E51 uniquely combines 100 V/50 A rating with certified 2000 V isolation and integrated fast diode - eliminating external isolation components and simplifying thermal/mechanical design in safety-critical industrial switching.
Availability
FS50KM-2-J1#E51 is available at Aetrix Electronics and suitable for motor control, lamp control, and solenoid control applications requiring stable component supply, long-term industrial lifecycle support, and guaranteed traceable sourcing.
Supply support for FS50KM-2-J1#E51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The FS50KM-2-J1#E51 belongs to Renesas' high-speed power MOSFET product line, engineered for rugged industrial switching where reliability, thermal performance, and integrated protection features are essential.
FAQ
What is the maximum continuous drain current rating for FS50KM-2-J1#E51?
The FS50KM-2-J1#E51 is rated for 50 A continuous drain current (ID) at case temperature Tc = 25°C. This rating decreases linearly with increasing case temperature, reaching zero at 150°C, per its power dissipation derating curve. The device also supports 200 A pulsed drain current (IDM) for short durations.
Does FS50KM-2-J1#E51 have an integrated body diode, and what is its reverse recovery time?
Yes, FS50KM-2-J1#E51 includes an integrated fast-recovery body diode with a typical reverse recovery time (trr) of 105 ns under test conditions of IS = 50 A and di/dt = –100 A/µs. This diode enables efficient freewheeling in inductive switching applications without requiring an external diode.
What is the isolation voltage rating of FS50KM-2-J1#E51, and how is it tested?
The FS50KM-2-J1#E51 has an isolation voltage (Viso) rating of 2000 V AC applied for one minute between the drain (connected to the metal tab) and the case. This test verifies reinforced insulation integrity and supports safe mounting to grounded heatsinks in industrial equipment.
What package type does FS50KM-2-J1#E51 use, and is the drain electrically connected to the tab?
FS50KM-2-J1#E51 uses the TO-220FN package (Renesas code PRSS0003AB-A), where the drain is internally bonded to the metal tab. This configuration requires electrical isolation of the heatsink unless the system design intentionally references the drain to chassis ground.
What gate drive voltage is required to fully enhance FS50KM-2-J1#E51, and what is its gate threshold range?
FS50KM-2-J1#E51 is specified for full enhancement at VGS = 10 V, delivering its rated rDS(ON). Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V (measured at ID = 1 mA), ensuring reliable turn-on with standard logic-level gate drivers while maintaining noise immunity.
FS50KM-2-J1#E51 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FS50KM-2-J1#E51 FAQ
1.How can I place an order for FS50KM-2-J1#E51 through Aetrix?
Please submit a Request for Quotation (RFQ) for FS50KM-2-J1#E51 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FS50KM-2-J1#E51 reliable?
The price and inventory of FS50KM-2-J1#E51 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS50KM-2-J1#E51 is usually 5 days.
3.What payment methods are accepted for FS50KM-2-J1#E51?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS50KM-2-J1#E51 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FS50KM-2-J1#E51?
FS50KM-2-J1#E51 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FS50KM-2-J1#E51 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FS50KM-2-J1#E51?
For technical support, including FS50KM-2-J1#E51 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS50KM-2-J1#E51 requirements.
6.How does Aetrix verify that FS50KM-2-J1#E51 is sourced from the original manufacturer or authorized distributors?
All FS50KM-2-J1#E51 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS50KM-2-J1#E51 meets industry standards.
7.What is the process for return or replacement of FS50KM-2-J1#E51?
All FS50KM-2-J1#E51 units undergo pre-shipment inspection (PSI). If there is an issue with FS50KM-2-J1#E51, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FS50KM-2-J1#E51 part is unused and in its original packaging.
Return procedure for FS50KM-2-J1#E51:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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