My Inquiry
My Account
Renesas FS50KM-2-J2#E52
- Part No.:
- FS50KM-2-J2#E52
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
FS50KM-2-J2#E52.pdf
- Description:
- DISCRETE / POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:884
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FS50KM-2-J2#E52 from Renesas Electronics is a high-speed N-channel power MOSFET designed for switching applications in industrial power electronics, featuring 100 V VDSS, 50 A continuous drain current, and 55 mΩ maximum rDS(ON) at 10 V gate drive. It integrates a fast-recovery body diode (105 ns) and provides 2000 V isolation voltage, making it suitable for motor control, DC-DC converters, and solenoid drivers where robustness and thermal performance are critical.
For engineers reviewing the FS50KM-2-J2#E52 datasheet, FS50KM-2-J2#E52 pinout, FS50KM-2-J2#E52 application, or FS50KM-2-J2#E52 equivalent, key selection criteria include its TO-220FN package with isolated case, 4.17 °C/W channel-to-case thermal resistance, avalanche-rated 50 A pulsed current capability, and verified operation up to +150 °C channel temperature.
Technical Context
This device uses a planar vertical DMOS structure optimized for high-current switching with low conduction loss and controlled switching transients. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard logic-level or 10 V gate drivers, while its 2300 pF input capacitance and 185 pF reverse transfer capacitance support stable high-frequency operation up to several hundred kHz in hard-switched topologies.
The integrated fast-recovery body diode enables synchronous rectification and freewheeling in inductive loads without external diode addition. Thermal design is facilitated by the isolated TO-220FN package, which allows direct heatsinking of the drain-connected tab while maintaining 2000 V AC isolation between terminals and case for safety-critical installations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-source voltage before breakdown, enabling use in 48 V and 72 V bus systems with margin. |
| rDS(ON) (max) | 55 mΩ - Limits conduction loss to ≤1.38 V at 25 A, supporting efficient thermal management in high-current switching nodes. |
| ID (continuous) | 50 A - Rated for sustained 50 A drain current at Tc = 25 °C, scalable down to ~25 A at Tc = 100 °C per derating curve. |
| trr (diode) | 105 ns - Fast body diode recovery reduces switching losses and voltage spikes during commutation in inductive circuits. |
| Rth(ch–c) | 4.17 °C/W - Enables direct heatsink mounting for effective thermal transfer; supports ≥30 W dissipation with ≤125 °C case rise. |
| Viso | 2000 V AC - Provides reinforced insulation between leads and metal tab, meeting basic safety requirements for industrial mains-connected equipment. |
| td(off) | 100 ns - Short turn-off delay supports PWM frequencies up to ~500 kHz in non-resonant converters with controlled EMI. |
Pinout & Package
FS50KM-2-J2#E52 is housed in the TO-220FN (RENESAS code PRSS0003AB-A) package - a full-molded, isolated variant of TO-220 with electrically insulated metal tab. The case is internally connected to the drain, enabling safe heatsinking without additional insulation hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives gate drive signal; requires 10 V for full enhancement; gate-source leakage ≤ ±0.1 µA ensures low standby power. |
| 2 (Drain) | High-side power path | Internally bonded to metal tab; carries main load current and connects to heatsink; rated for 100 V blocking and 200 A pulsed. |
| 3 (Source) | Reference node | Serves as return path for load current and gate drive reference; source-drain forward voltage ≤1.5 V at 25 A enables low-loss freewheeling. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220FN package | 2000 V AC isolation between leads and case eliminates need for insulating pads or sleeves in heatsink mounting. |
| Fast-recovery body diode | 105 ns reverse recovery time minimizes switching loss and voltage overshoot when used in inductive freewheeling paths. |
| Avalanche energy rating | Rated for 50 A pulsed avalanche current (L = 50 µH), enabling robust operation under inductive switching stress without external snubbers. |
| Low gate charge profile | Typical input capacitance 2300 pF and Crss 185 pF allow efficient driving with standard 1–2 A gate drivers at >100 kHz. |
| High-temperature channel rating | Specified operation from –55 °C to +150 °C channel temperature supports deployment in sealed enclosures or high-ambient environments. |
Applications
| Motor Control | Lamp Control |
|---|---|
Use Scenario: Driving brushed DC motors in industrial automation systems requiring bidirectional PWM control and regenerative braking. IC Role / Device Role / Timing Role: High-side or low-side switching element handling 50 A peak currents with fast turn-on/off to minimize switching loss during direction reversal. Use Value: Integrated fast diode enables clean current recirculation during PWM off-time, reducing EMI and eliminating need for external flyback diodes. | Use Scenario: Dimming and switching of high-intensity discharge (HID) and LED arrays in commercial lighting fixtures. IC Role / Device Role / Timing Role: Primary power switch in constant-current LED driver output stage or ballast control circuit. Use Value: 55 mΩ rDS(ON) limits conduction loss to <1.4 V at 25 A, improving system efficiency and thermal headroom in enclosed luminaires. |
| Solenoid Control | DC-DC Converters |
Use Scenario: Actuating high-force solenoids in valve and locking mechanisms used in HVAC and factory machinery. IC Role / Device Role / Timing Role: Low-side switch delivering 50 A inductive pulse with controlled turn-off to suppress back-EMF spikes. Use Value: 100 V VDSS and 200 A pulsed rating accommodate 48 V supply transients and inductive kickback without clamping components. | Use Scenario: Primary-side switch in non-isolated buck or buck-boost converters for industrial power supplies (e.g., 24/48 V outputs). IC Role / Device Role / Timing Role: Main switching transistor operating at 100–300 kHz with 10 V gate drive and minimal dead-time loss. Use Value: 39 mΩ typical rDS(ON) and 100 ns td(off) enable >95% efficiency at 25 A output while maintaining stable thermal behavior. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFH50N10 | Same VDSS (100 V), higher rDS(ON) (65 mΩ max), no isolation rating, TO-247 package | Requires external isolation hardware; better suited for high-power discrete designs with dedicated heatsink interfaces | Select when higher avalanche ruggedness is needed and board space permits larger TO-247 footprint. |
| IRF540NPBF | Lower VDSS (100 V same), higher rDS(ON) (44 mΩ typ but 77 mΩ max), no isolation, TO-220AB package | Lacks 2000 V isolation; unsuitable for safety-critical or mains-referenced heatsink mounting | Choose only for cost-sensitive, non-isolated low-voltage (<30 V) applications where thermal margin is ample. |
Compared with IXFH50N10 and IRF540NPBF, FS50KM-2-J2#E52 delivers certified isolation, tighter rDS(ON) tolerance, and guaranteed 105 ns diode recovery-making it uniquely suitable for compact, safety-compliant industrial switching where heatsink integration and reliability are prioritized over raw die size.
Availability
FS50KM-2-J2#E52 is available at Aetrix Electronics and suitable for motor control, lamp control, and DC-DC converter designs requiring stable component supply, long-term industrial lifecycle support, and certified isolation performance.
Supply support for FS50KM-2-J2#E52 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.
The FS50KM-2-J2#E52 belongs to Renesas' high-speed power MOSFET product line, engineered specifically for rugged industrial switching applications demanding isolation, avalanche capability, and consistent parametric performance across temperature.
FAQ
What is the gate threshold voltage range for FS50KM-2-J2#E52?
The FS50KM-2-J2#E52 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 1 mA and VDS = 10 V. This ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining noise immunity. The specification is tested across temperature and process variation, and the FS50KM-2-J2#E52 maintains stable switching behavior even at elevated channel temperatures up to +150 °C.
Does FS50KM-2-J2#E52 include an integrated body diode, and what is its recovery time?
Yes, FS50KM-2-J2#E52 integrates a fast-recovery body diode with a typical reverse recovery time (trr) of 105 ns under IS = 50 A and di/dt = –100 A/µs conditions. This diode is fully characterized and usable for freewheeling and synchronous rectification. The FS50KM-2-J2#E52 datasheet confirms this parameter is measured and guaranteed, and the diode's soft recovery behavior helps reduce EMI in inductive switching applications.
What is the thermal resistance from channel to case for FS50KM-2-J2#E52, and how does it affect heatsink design?
The channel-to-case thermal resistance (Rth(ch–c)) of FS50KM-2-J2#E52 is 4.17 °C/W maximum. This value enables direct mounting to a heatsink without thermal interface material degradation concerns, assuming proper mechanical contact. For a 30 W power dissipation, the FS50KM-2-J2#E52 will exhibit a ≤125 °C case temperature rise above ambient - a key constraint for enclosure thermal design. The FS50KM-2-J2#E52's TO-220FN package ensures repeatable thermal performance across production lots.
Can FS50KM-2-J2#E52 be used in avalanche mode, and what is its rated avalanche current?
Yes, FS50KM-2-J2#E52 is rated for unclamped inductive switching (UIS) with an avalanche drain current (IDA) of 50 A (pulsed), tested with L = 50 µH. This rating is validated per JEDEC standards and reflects single-pulse ruggedness under worst-case inductive turn-off. The FS50KM-2-J2#E52's avalanche capability allows operation in circuits where voltage spikes exceed VDSS, reducing reliance on external clamping components - a feature confirmed in the official Renesas datasheet Rev.2.00.
What is the isolation voltage rating of FS50KM-2-J2#E52, and how is it tested?
The FS50KM-2-J2#E52 provides 2000 V AC isolation voltage (Viso) between all leads and the metal tab (case), tested for one minute per IEC 60747-5-2. This isolation is achieved via the TO-220FN package's molded insulation barrier and is integral to the device - no external insulation is required. The FS50KM-2-J2#E52's isolation rating supports use in Class I industrial equipment where functional isolation between power circuitry and chassis is mandatory.
FS50KM-2-J2#E52 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FS50KM-2-J2#E52 FAQ
1.How can I place an order for FS50KM-2-J2#E52 through Aetrix?
Please submit a Request for Quotation (RFQ) for FS50KM-2-J2#E52 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FS50KM-2-J2#E52 reliable?
The price and inventory of FS50KM-2-J2#E52 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS50KM-2-J2#E52 is usually 5 days.
3.What payment methods are accepted for FS50KM-2-J2#E52?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS50KM-2-J2#E52 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FS50KM-2-J2#E52?
FS50KM-2-J2#E52 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FS50KM-2-J2#E52 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FS50KM-2-J2#E52?
For technical support, including FS50KM-2-J2#E52 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS50KM-2-J2#E52 requirements.
6.How does Aetrix verify that FS50KM-2-J2#E52 is sourced from the original manufacturer or authorized distributors?
All FS50KM-2-J2#E52 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS50KM-2-J2#E52 meets industry standards.
7.What is the process for return or replacement of FS50KM-2-J2#E52?
All FS50KM-2-J2#E52 units undergo pre-shipment inspection (PSI). If there is an issue with FS50KM-2-J2#E52, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FS50KM-2-J2#E52 part is unused and in its original packaging.
Return procedure for FS50KM-2-J2#E52:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FS50KM-2-J2#E52 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
