My Inquiry
My Account
Renesas FS50UM-3
- Part No.:
- FS50UM-3
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
FS50UM-3.pdf
- Description:
- MOSFET N-CH 150V 50A
- Quantity:
- Payment:
- Shipping:
Inventory:5,523
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FS50UM-3 from Renesas Electronics is an N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor control, and solenoid drivers. It features a 150 V drain-source breakdown voltage, 31 mΩ maximum rDS(ON) at 10 V gate drive, 50 A continuous drain current, and integrated fast-recovery body diode with 130 ns typical reverse recovery time.
For engineers reviewing the FS50UM-3 datasheet, FS50UM-3 pinout, FS50UM-3 application, or FS50UM-3 equivalent, this device is selected for robust high-current switching where low conduction loss, fast turn-on/turn-off (95 ns td(on), 380 ns td(off)), thermal reliability (Rth(ch–c) = 1.0 °C/W), and TO-220 package mechanical stability are critical.
Technical Context
The FS50UM-3 employs a planar vertical DMOS structure optimized for high-voltage, high-current switching with minimized gate charge (Qg typ. not specified but derived from Ciss = 6540 pF, Crss = 360 pF) and controlled Miller capacitance. Its threshold voltage range (2.0–4.0 V) ensures stable enhancement-mode operation across temperature.
Thermal design is enabled by direct case-to-heatsink mounting via the TO-220 metal tab (Drain-connected), supporting 125 W continuous dissipation at Tc = 25°C and derating to zero at 150°C. The integrated source-drain diode (VSD = 1.0–1.5 V at 25 A) supports synchronous rectification and freewheeling without external diode addition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 100 V bus systems with margin. |
| rDS(ON) max | 31 mΩ - Ensures ≤0.775 V conduction drop at 25 A, minimizing I²R losses in high-current paths. |
| ID continuous | 50 A - Supports sustained load currents up to 50 A with proper heatsinking at Tc ≤ 25°C. |
| tr/tf | 155 ns / 180 ns - Enables efficient hard-switching at frequencies up to ~500 kHz in non-resonant topologies. |
| trr (diode) | 130 ns - Limits reverse recovery charge (Qrr) and associated switching loss during inductive turn-off. |
| Rth(ch–c) | 1.0 °C/W - Allows 125 W power dissipation with only 125°C temperature rise from case to channel. |
| VGS(th) | 2.0–4.0 V - Compatible with standard 5 V or 10 V gate drivers; avoids unintended turn-on near 0 V. |
Pinout & Package
FS50UM-3 uses the industry-standard TO-220 package (RENESAS code PRSS0004AA-A, JEITA SC-46), with the metal tab electrically connected to Drain and thermally coupled to the channel for direct heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ≥10 V for full enhancement and minimal rDS(ON). |
| 2 (Drain) | Main current output / heat path | Connected internally to metal tab; must be isolated from heatsink unless system ground reference permits. |
| 3 (Source) | Power return / reference node | Serves as common return for load current and gate driver reference; low-inductance layout critical. |
| 4 (Drain) | Redundant Drain connection | Second Drain terminal for enhanced current handling and thermal spreading; tied to Pin 2 internally. |
Key Features
| Feature | Design Value |
|---|---|
| High-current capability | 50 A continuous ID with 200 A pulsed rating enables use in high-power motor drives and industrial DC-DC stages. |
| Low on-resistance | 24 mΩ typical rDS(ON) at VGS = 10 V reduces conduction loss and thermal stress under full load. |
| Fast switching performance | 95 ns turn-on delay + 155 ns rise time supports efficient operation in high-frequency SMPS designs. |
| Integrated body diode | 130 ns trr and 1.0–1.5 V VSD enable reliable freewheeling in buck, flyback, and half-bridge configurations. |
| Robust thermal design | 1.0 °C/W channel-to-case resistance allows compact thermal solutions with standard TO-220 heatsinks. |
Applications
| Brushless DC Motor Drive | Industrial DC-DC Converter |
|---|---|
Use Scenario: Driving high-current phases in 3-phase BLDC inverters for HVAC blowers or industrial pumps. IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-step commutation; handles 50 A peak phase current with <1 µs dead-time tolerance. Use Value: Low rDS(ON) minimizes copper loss heating; fast tr/tf enables precise PWM timing and reduced torque ripple. |
Use Scenario: Primary-side switch in 48 V–12 V isolated forward or active-clamp forward converter for factory automation PLCs. IC Role / Device Role / Timing Role: Main power switch operating at 200–300 kHz; withstands 150 V reflected transients during reset. Use Value: 150 V VDSS provides margin against voltage spikes; integrated diode simplifies snubber design and improves light-load efficiency. |
| Lamp Dimming Control | Solenoid Actuator Driver |
Use Scenario: Phase-cut dimming of high-wattage halogen or LED retrofit lamps in commercial lighting systems. IC Role / Device Role / Timing Role: Leading-edge TRIAC-compatible switch replacing mechanical relays; handles 50 A inrush and steady-state current. Use Value: Fast turn-on (95 ns) ensures accurate zero-crossing synchronization; rugged avalanche rating (IDA = 50 A) absorbs line transients. |
Use Scenario: Driving 24 V/48 V industrial solenoids in valve control modules for fluid handling systems. IC Role / Device Role / Timing Role: High-side switch controlling 50 A inductive loads; clamps flyback energy via integrated diode during turn-off. Use Value: 130 ns trr limits voltage overshoot and EMI; 200 A pulsed rating accommodates solenoid inrush without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF15 | VDSS = 150 V, rDS(ON) = 30 mΩ, Qg = 100 nC, no integrated diode | Requires external fast diode; higher gate charge increases driver loss | Preferred when discrete diode selection is needed for customized recovery behavior |
| IRF1405 | VDSS = 55 V, rDS(ON) = 5.3 mΩ, ID = 169 A, TO-220 | Lower voltage rating limits use to ≤48 V systems; unsuitable for 100 V bus applications | Selected only for high-current, low-voltage (<60 V) DC distribution where ultra-low rDS(ON) dominates |
Compared with STP55NF15, FS50UM-3 offers integrated diode functionality and lower Crss (360 pF vs. ~450 pF), reducing Miller-induced shoot-through risk; versus IRF1405, it trades lower rDS(ON) for essential 150 V blocking capability required in industrial 100 V nominal systems.
Availability
FS50UM-3 is available at Aetrix Electronics and suitable for motor control, lamp dimming, solenoid actuation, and industrial DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Renesas Electronics.
Supply support for FS50UM-3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The FS50UM-3 belongs to Renesas' high-speed power MOSFET product line, engineered for rugged, high-current switching in industrial automation, power supplies, and motion control where reliability under thermal and electrical stress is mandatory.
FAQ
What is the maximum continuous drain current rating for FS50UM-3?
The FS50UM-3 is rated for 50 A continuous drain current (ID) at case temperature Tc = 25°C. This rating assumes adequate heatsinking and derates linearly to zero at Tc = 150°C per the published thermal resistance Rth(ch–c) = 1.0 °C/W. At elevated case temperatures, the actual usable current must be reduced to maintain channel temperature ≤150°C.
Does FS50UM-3 include an integrated body diode, and what is its reverse recovery time?
Yes, the FS50UM-3 integrates a fast-recovery body diode with a typical reverse recovery time (trr) of 130 ns, measured at IS = 50 A and di/dt = –100 A/µs. This diode is intrinsic to the MOSFET structure and supports freewheeling and synchronous rectification without requiring an external diode in many topologies.
What gate drive voltage is required to achieve the specified rDS(ON) for FS50UM-3?
The FS50UM-3 achieves its specified maximum rDS(ON) of 31 mΩ (and typical 24 mΩ) at VGS = 10 V, with ID = 25 A. While the device turns on fully at VGS(th) ≥ 2.0 V, operation below 10 V results in significantly higher on-resistance and increased conduction loss-thus 10 V is the recommended minimum gate drive for optimal efficiency.
Is FS50UM-3 pin-compatible with other TO-220 N-channel MOSFETs?
The FS50UM-3 uses standard TO-220 outline with Gate-Drain-Source-Drain pinout (1-2-3-4), matching common 4-pin TO-220 variants. However, pin compatibility alone does not guarantee functional equivalence-designers must verify VDSS, rDS(ON), Qg, and diode characteristics before substitution, as layout and thermal interface requirements may differ between devices.
What is the thermal resistance from channel to case (Rth(ch–c)) for FS50UM-3?
The FS50UM-3 has a maximum channel-to-case thermal resistance (Rth(ch–c)) of 1.0 °C/W, measured under standard mounting conditions. This value enables calculation of junction temperature rise (ΔT = PD × Rth(ch–c)) and informs heatsink selection-e.g., 125 W dissipation yields 125°C rise above case temperature, requiring careful thermal design to stay within the 150°C absolute maximum channel temperature limit.
FS50UM-3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6540 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
FS50UM-3 FAQ
1.How can I place an order for FS50UM-3 through Aetrix?
Please submit a Request for Quotation (RFQ) for FS50UM-3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FS50UM-3 reliable?
The price and inventory of FS50UM-3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS50UM-3 is usually 5 days.
3.What payment methods are accepted for FS50UM-3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS50UM-3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FS50UM-3?
FS50UM-3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FS50UM-3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FS50UM-3?
For technical support, including FS50UM-3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS50UM-3 requirements.
6.How does Aetrix verify that FS50UM-3 is sourced from the original manufacturer or authorized distributors?
All FS50UM-3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS50UM-3 meets industry standards.
7.What is the process for return or replacement of FS50UM-3?
All FS50UM-3 units undergo pre-shipment inspection (PSI). If there is an issue with FS50UM-3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FS50UM-3 part is unused and in its original packaging.
Return procedure for FS50UM-3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FS50UM-3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
