Infineon Technologies FS55MR12W1M1HB11NPSA1

Overview

FS55MR12W1M1HB11NPSA1 from Infineon is a 1200 V, 15 A EasyPACK™ power module integrating a CoolSiC™ trench MOSFET, body diode, and integrated NTC thermistor in a low-inductance PressFIT package. It delivers low switching losses (Eon = 0.334 mJ, Eoff = 0.043 mJ at Tvj = 175 °C), RDS(on) = 114 mΩ at 175 °C, and thermal resistance RthJH = 2.03 K/W per MOSFET - designed for high-frequency industrial DC/DC converters and motor drives.

For engineers reviewing the FS55MR12W1M1HB11NPSA1 datasheet, FS55MR12W1M1HB11NPSA1 pinout, FS55MR12W1M1HB11NPSA1 application, or FS55MR12W1M1HB11NPSA1 equivalent, key selection criteria include its 1200 V blocking capability, PressFIT mechanical mounting, integrated NTC (R25 = 5 kΩ, B25/100 = 3433 K), low stray inductance (14 nH), and qualification to IEC 60747/60749/60068 for industrial environments.

Technical Context

This module implements a half-bridge topology with discrete CoolSiC™ trench MOSFETs and co-packaged body diodes, enabling high-efficiency operation up to 175 °C junction temperature. Its gate drive requirements are defined by VGS(on) = 15–18 V and VGS(off) = –5 to 0 V, with total gate charge QG = 0.045 µC and internal RGint = 7.5 Ω.

The integrated NTC thermistor provides real-time die temperature monitoring with tight tolerance (±5% ΔR/R at 100 °C) and calibrated B-values (3375–3433 K). Mechanical design includes rugged clamping, creepage ≥6.3 mm (terminal-to-terminal), and isolation test voltage of 3.0 kV RMS @ 50 Hz for 1 min.

Key Specifications

Pinout & Package

FS55MR12W1M1HB11NPSA1 uses the EasyPACK™ 2B package (13.5 × 10.5 × 8.5 mm), featuring PressFIT terminals for solderless PCB mounting and integrated clamping hardware. The module integrates two power switches (high-side and low-side) plus NTC sensor terminals in a single compact housing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.

Compared with FS55MR12W1M1HB11NPSA1, the PSA2 variant improves NTC accuracy at minor firmware cost, while the FF300R12ME4_B11 trades SiC efficiency for higher current and lower gate drive complexity - making it viable only where switching frequency remains below 5 kHz and external temperature sensing is acceptable.

Availability

FS55MR12W1M1HB11NPSA1 is available at Aetrix Electronics and suitable for industrial motor drives, high-frequency DC/DC converters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and qualified high-reliability power modules.

Supply support for FS55MR12W1M1HB11NPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the EasyPACK™ family of power modules engineered for industrial-grade reliability, press-fit assembly, and integrated sensing - targeting high-efficiency, high-power-density applications in motor control, renewable energy, and UPS systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The FS55MR12W1M1HB11NPSA1 is rated for continuous operation up to Tvj = 175 °C, with thermal resistance RthJH = 2.03 K/W per MOSFET. At 15 A IDN and RDS(on) = 114 mΩ, conduction loss reaches ~25.7 W, requiring a heatsink capable of maintaining case temperature ≤150 °C under worst-case ambient conditions.

Does this module require external gate resistors for standard operation?

Yes - although the module includes an internal gate resistor RGint = 7.5 Ω, external RGon (3.9 Ω typical) and RGoff (3.3 Ω typical) are specified in the datasheet for controlled switching speed and EMI optimization. Omitting them risks excessive dv/dt (>27.7 kV/µs) and potential shoot-through in half-bridge configurations.

How is the integrated NTC thermistor calibrated, and what accuracy can be expected?

The NTC is calibrated to R25 = 5 kΩ ±5% at 25 °C, with B-values of 3375 K (25/50 °C), 3411 K (25/80 °C), and 3433 K (25/100 °C). When used with a precision 1% reference resistor in a voltage divider and 12-bit ADC, temperature accuracy is ±1.5 °C from –40 to +125 °C ambient.

Can this module be used in a three-phase inverter configuration?

Yes - three FS55MR12W1M1HB11NPSA1 modules can be configured as a 3-phase inverter (one per leg), leveraging their matched electrical characteristics and identical PressFIT footprint. Layout must maintain symmetrical gate loop inductance (<2 nH difference) and equal thermal impedance to ensure current sharing within ±5% imbalance.