Renesas FS70KMJ-2#B00
- Part No.:
- FS70KMJ-2#B00
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
FS70KMJ-2#B00.pdf
- Description:
- 70A, 100V, N-CHANNEL MOSFET
- Quantity:
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Inventory:1,488
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Product details
Overview
FS70KMJ-2#B00 from Renesas Electronics is a high-speed N-channel power MOSFET designed for switching applications in motor control, lamp control, solenoid drivers, and DC-DC converters. It features 100 V drain-source breakdown voltage (V(BR)DSS), 17 mΩ maximum on-resistance at 4 V gate drive, 70 A continuous drain current, integrated fast-recovery body diode with 115 ns reverse recovery time, and 2000 V isolation voltage between terminal and case.
For engineers reviewing the FS70KMJ-2#B00 datasheet, FS70KMJ-2#B00 pinout, FS70KMJ-2#B00 application, or FS70KMJ-2#B00 equivalent, this page delivers verified electrical specifications, TO-220FN package layout, thermal resistance (3.57 °C/W channel-to-case), switching timing (td(on) = 54 ns, td(off) = 830 ns), and real-world use context for industrial power switching designs.
Technical Context
This MOSFET employs a trench-gate vertical structure optimized for low rDS(ON) at low gate drive voltages (4 V), enabling direct interface with 3.3 V/5 V logic controllers without level-shifting. Its integrated fast-recovery diode supports synchronous rectification and freewheeling in inductive loads, with controlled reverse recovery charge to minimize switching losses and EMI.
The device operates within –55 °C to +150 °C channel temperature range and is rated for 280 A pulsed drain current. Its 8200 pF input capacitance (Ciss), 1150 pF output capacitance (Coss), and 600 pF reverse transfer capacitance (Crss) define its gate drive requirements and switching behavior under 50 V bus conditions with 50 Ω source impedance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche conduction; suitable for 48 V and 72 V industrial DC bus systems. |
| rDS(ON) max | 17 mΩ at VGS = 4 V, ID = 35 A - Enables <0.6 V conduction loss at 35 A, critical for thermally constrained motor driver PCBs. |
| ID (continuous) | 70 A at TC = 25 °C - Supports high-current load switching when heatsinked per PD = 35 W rating. |
| trr | 115 ns typical - Fast body diode recovery reduces cross-conduction loss and voltage spikes in half-bridge configurations. |
| Viso | 2000 V AC for 1 minute - Confirms reinforced insulation between leads and metal tab, required for safety-critical isolated power stages. |
| Rth(ch–c) | 3.57 °C/W - Defines thermal path efficiency from silicon junction to heatsink mounting surface; enables precise thermal design. |
| Qg | Not explicitly listed but derived from Ciss/Coss/Crss values - Total gate charge governs required driver peak current and switching energy loss. |
Pinout & Package
FS70KMJ-2#B00 is housed in the TO-220FN (RENESAS code PRSS0003AB-A) package: a full-molded, insulated-tab variant of TO-220 with three leads and integral metal heat sink tab. The plastic body provides creepage/clearance compliance for 2000 V isolation, and the tab is electrically connected to the Drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Gate | Control electrode; requires ≤±20 V gate-source voltage; 0.1 µA leakage max ensures stable turn-off under high-impedance drive. |
| 2 (Center) | Drain | Main high-side current path; electrically tied to metal tab; must be isolated from heatsink unless referenced to system ground. |
| 3 (Right) | Source | Power return node; defines local ground reference for gate drive; carries full load current and diode reverse recovery current. |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage gate drive compatibility | Specified rDS(ON) ≤18 mΩ at VGS = 4 V - eliminates need for gate driver ICs in microcontroller-based 5 V systems. |
| Integrated fast-recovery body diode | trr = 115 ns typical at IS = 70 A - reduces snubber component count and improves efficiency in flyback and buck-boost topologies. |
| High isolation voltage | Viso = 2000 V AC - satisfies reinforced insulation requirements for Class I equipment in industrial power supplies. |
| Robust avalanche capability | IDA = 70 A pulsed with L = 100 µH - withstands inductive kickback without external clamping in solenoid and relay drivers. |
| Thermal performance | Rth(ch–c) = 3.57 °C/W - enables compact heatsink sizing for 35 W continuous dissipation in ambient-limited enclosures. |
Applications
| Motor Control | Lamp Control |
|---|---|
Use Scenario: Brushed DC motor H-bridge half-bridge leg in automated gate actuators and HVAC dampers. IC Role / Device Role / Timing Role: High-side or low-side switching element handling bidirectional 40–60 A peak currents with PWM up to 20 kHz. Use Value: Low 17 mΩ rDS(ON) at 4 V drive minimizes conduction loss; fast 115 ns trr prevents shoot-through during direction reversal. |
Use Scenario: Dimmable LED array driver in commercial lighting fixtures using constant-current buck regulation. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 100–500 kHz with zero-voltage switching assistance. Use Value: Integrated diode eliminates external Schottky, reducing BOM count; 2000 V Viso supports SELV/PELV isolation compliance. |
| DC-DC Converter | Solenoid Driver |
Use Scenario: Primary-side switch in 1 kW isolated forward converter for industrial PLC power modules. IC Role / Device Role / Timing Role: Hard-switched 100 V primary FET with 54 ns turn-on delay and 830 ns turn-off delay at 50 V bus. Use Value: 8200 pF Ciss and 600 pF Crss enable predictable gate drive design; 3.57 °C/W Rth(ch–c) supports forced-air cooling. |
Use Scenario: 24 V/48 V solenoid valve controller in pneumatic control panels with rapid on/off cycling. IC Role / Device Role / Timing Role: Unidirectional switch managing 70 A inrush and sustaining 35 A hold current with 100 µs pulse width. Use Value: 70 A IDM rating handles cold-start surge; avalanche energy rating protects against inductive flyback without TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP70NF10 | V(BR)DSS = 100 V, rDS(ON) = 14 mΩ @ VGS = 10 V (not specified at 4 V), no Viso rating, TO-220 package without insulated tab | Lacks 2000 V isolation; requires external heatsink insulation; gate drive less compatible with 3.3 V logic | Choose only if isolation not required and gate drive is ≥10 V; verify avalanche ruggedness separately. |
| IXTH70N10L2 | V(BR)DSS = 100 V, rDS(ON) = 12.5 mΩ @ VGS = 10 V, trr = 90 ns, no Viso spec, TO-247 package | Higher performance but larger footprint; no certified isolation voltage; higher cost and thermal resistance (Rth(j–c) ≈ 1.2 °C/W but no tab isolation) | Prefer for ultra-low loss where board space allows; avoid where reinforced insulation or TO-220FN form factor is mandatory. |
Compared with STP70NF10 and IXTH70N10L2, FS70KMJ-2#B00 uniquely combines 4 V gate drive support, 2000 V isolation, and TO-220FN packaging-making it the only option among the three qualified for safety-isolated, microcontroller-driven industrial switching where creepage, drive simplicity, and thermal density are jointly constrained.
Availability
FS70KMJ-2#B00 is available at Aetrix Electronics and suitable for motor control, lamp control, and solenoid control applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from Renesas Electronics' qualified manufacturing lines.
Supply support for FS70KMJ-2#B00 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The FS70KMJ-2#B00 belongs to Renesas' high-speed power MOSFET product line, engineered specifically for robust, low-drive-voltage switching in industrial motion, lighting, and power conversion systems where reliability and isolation integrity are non-negotiable.
FAQ
What is the maximum gate-source voltage rating for FS70KMJ-2#B00?
The FS70KMJ-2#B00 has a maximum gate-source voltage (VGSS) rating of ±20 V. This means the gate terminal must never be driven more than +20 V above or –20 V below the source potential. Exceeding this limit risks permanent oxide damage to the gate dielectric. The FS70KMJ-2#B00 is characterized down to 4 V gate drive, making it compatible with standard logic-level interfaces without requiring gate boost circuits.
Does FS70KMJ-2#B00 include an integrated body diode, and what is its recovery performance?
Yes, the FS70KMJ-2#B00 integrates a fast-recovery body diode with a typical reverse recovery time (trr) of 115 ns at IS = 70 A and di/dt = –100 A/µs. This diode is intrinsic to the MOSFET's vertical structure and is fully characterized in the datasheet. Its fast recovery minimizes voltage overshoot and switching loss during commutation, especially in inductive load applications like motor and solenoid control where the FS70KMJ-2#B00 is commonly deployed.
What is the thermal resistance from channel to case (Rth(ch–c)) for FS70KMJ-2#B00, and how does it impact heatsink selection?
The FS70KMJ-2#B00 has a maximum channel-to-case thermal resistance (Rth(ch–c)) of 3.57 °C/W. This value reflects the internal thermal path from the silicon junction to the metal tab surface. When designing heatsinking, this parameter must be combined with the heatsink's thermal resistance to ambient (Rth(c–a)) and interface material resistance to calculate total junction-to-ambient rise. For example, at 35 W dissipation, a 3.57 °C/W Rth(ch–c) contributes ~125 °C rise before considering heatsink performance - underscoring the need for adequate mechanical mounting and thermal interface material in the FS70KMJ-2#B00 application.
Is FS70KMJ-2#B00 suitable for avalanche operation, and what is its rated avalanche current?
Yes, the FS70KMJ-2#B00 is rated for unclamped inductive switching (UIS) with an avalanche drain current (IDA) of 70 A (pulsed), tested with L = 100 µH. This rating confirms its ability to absorb inductive energy without failure during transient overvoltage events - such as those occurring in solenoid or relay coil de-energization. The FS70KMJ-2#B00 datasheet specifies this under "Maximum Ratings", validating its use in ruggedized industrial controls where external clamping may be omitted.
What package type does FS70KMJ-2#B00 use, and how does its insulation rating affect PCB layout?
The FS70KMJ-2#B00 uses the TO-220FN package (RENESAS code PRSS0003AB-A), featuring a full-molded insulated tab rated for 2000 V AC isolation between leads and case. This eliminates the need for insulating washers or pads when mounting to grounded heatsinks - provided the tab remains at Drain potential. In PCB layout, designers must maintain ≥4 mm creepage and clearance from Drain/tab to any other net, per IEC 60950-1, to preserve the FS70KMJ-2#B00's certified isolation integrity.
FS70KMJ-2#B00 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
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- Rds On (Max) @ Id, Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
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- Supplier Device Package:
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FS70KMJ-2#B00 FAQ
1.How can I place an order for FS70KMJ-2#B00 through Aetrix?
Please submit a Request for Quotation (RFQ) for FS70KMJ-2#B00 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FS70KMJ-2#B00 reliable?
The price and inventory of FS70KMJ-2#B00 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FS70KMJ-2#B00 is usually 5 days.
3.What payment methods are accepted for FS70KMJ-2#B00?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FS70KMJ-2#B00 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FS70KMJ-2#B00?
FS70KMJ-2#B00 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FS70KMJ-2#B00 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FS70KMJ-2#B00?
For technical support, including FS70KMJ-2#B00 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FS70KMJ-2#B00 requirements.
6.How does Aetrix verify that FS70KMJ-2#B00 is sourced from the original manufacturer or authorized distributors?
All FS70KMJ-2#B00 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FS70KMJ-2#B00 meets industry standards.
7.What is the process for return or replacement of FS70KMJ-2#B00?
All FS70KMJ-2#B00 units undergo pre-shipment inspection (PSI). If there is an issue with FS70KMJ-2#B00, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FS70KMJ-2#B00 part is unused and in its original packaging.
Return procedure for FS70KMJ-2#B00:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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